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a_511558
Effect
of p-doping profile on performance of strained multi-quantum-well
InGaAsP-InP lasers
- Belenky, G.L.; Reynolds, C.L., Jr.; Kazarinov, R.F.;
Swaminathan, V.; Luryi, S.L.; Lopata, J.
State Univ. of New York, Stony Brook, NY, USA
This paper appears in: Quantum Electronics, IEEE
Journal of
On page(s): 1450 - 1455
Aug. 1996
Volume: 32 Issue: 8
ISSN: 0018-9197
References Cited: 10
CODEN: IEJQA7
INSPEC Accession Number: 5354863
Abstract:
Leakage of electrons from the active region of InGaAsP-InP
laser heterostructures with different profiles of acceptor doping was
measured by a purely electrical technique together with the device
threshold current. Comparison of the obtained results with modeling
data and SIMS analysis shows that carrier leakage of electrons over the
heterobarrier depends strongly on the profile of p-doping and level of
injection. In the case of a structure with an undoped
p-cladding/waveguide interface, the value of electron leakage current
can reach 20% of the total pumping current at an injection current
density of 10 kA/cm at 50/spl deg/C. It is shown that carrier leakage
in InGaAsP-InP multi-quantum-well lasers can be minimized and the
device performance improved by utilizing a p-doped
separate-confinement-heterostructure layer.
Index Terms:
quantum well lasers; indium compounds; gallium arsenide; III-V
semiconductors; semiconductor doping; leakage currents; current
density; doping profiles; secondary ion mass spectra; p-doping profile;
performance; strained multi-quantum-well InGaAsP-InP lasers; electron
leakage; active region; InGaAsP-InP laser heterostructures; acceptor
doping; electrical technique; device threshold current; modeling data;
SIMS analysis; carrier leakage; heterobarrier; p-doping; injection
level; undoped p-cladding/waveguide interface; electron leakage
current; total pumping current; injection current density; device
performance; p-doped separate-confinement-heterostructure layer; 50
degC; InGaAsP-InP
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Reference list:
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2. G. P. Agrawal, N. K. Dutta, "Long-Wavelength Semiconductor Lasers", Van Nostrand Reinhold, New York, 1986.
3. L. C. Chiu, K. L. Yu, S. Margalit, T. R. Chen, U. Koren, A. Hasson, A. Yariv, "Field and hot carrier enhanced leakage in InGaAsP/InP heterojunctions", IEEE J. Quantum Electron., vol.QE-19, pp.1335-1983.
4. R. F. Kazarinov, M. R. Pinto, "Carrier transport in laser heterostructures", IEEE J. Quantum Electron., vol.30, pp.49-1994.
[Abstract] [PDF Full-Text (368KB)]
5. G. L. Belenky, R. F. Kazarinov, J. Lopata, S. Luryi, T. Tanbun-Ek, P. Garbinski, "Direct measurement of the carrier leakage out of the active region in InGaAsP/InP laser heterostucture", IEEE Trans. Electron Devices, vol.42, pp.215-1995.
[Abstract] [PDF Full-Text (336KB)]
6. T. R. Chen, S. Margalit, U. Koren, K. L. Yu, L. Chiu, A. Hasson, A. Yariv, "Direct observation of the carrier leakage in InGaAsP/InP laser", Appl. Phys. Lett., vol.42, pp.1000-1983.
7. M. S. Hybertsen, "Band offset transitivity at the InGaAs/InAlAs/InP (001) heterointerfaces", Appl. Phys. Lett., vol.58, pp.1759-1991.
8. G. L. Belenky, A. Kastalsky, S. Luryi, P. A. Garbinski, A. Y. Cho, D. L. Sivco, "Measurement of the effective hole temperature under hot electron injection in InGaAs/InAlAs heterostructures", Appl. Phys. Lett., vol.64, pp.2247-1994.
9. V. D. Pishchalko, V. I. Tolstikhin, "Carrier heating effects in InGaAsP/InP heterostructures", Sov. Phys.—Semicond., vol.24, pp.228-1990.
10. K. D. Chik, "A theoretical analysis of Auger recombination induced energetic carrier leakage in InGaAsP/InP double heteroinjection lasers and light emitting diodes", J. Appl. Phys., vol.63, pp.468-1988.
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