Prof. Gregory Belenky

 

EDUCATION:

1979            Doctor of Physical and Mathematical Sciences, Institute of Physics, Baku, USSR

1969                    Ph.D., Physics and Mathematics, Institute of Semiconductors, Kiev, USSR

 

SCIENTIFIC INTERESTS center on development of optoelectronic devices and systems as well as on physics of low dimensional crystals and structures. Since 1991, working at AT&T Bell Laboratories, Dr. Belenky was involved in designing, modeling, manufacturing and characterization of semiconductor lasers.

 

CURRENT RESEARCH INTERESTS:

Design, manufacturing and characterization of optoelectronic and microelectronic semiconductor devices and systems. Lasers for telecommunications. Physics of semiconductors and semiconductor devices.

 

PUBLICATIONS:  Over 100 publications in scientific technical journals.                                                                       Three reviews. Two US patents

 

LIST OF PATENTS:

  1.       G.L. Belenky, R.F. Kasarinov

            Article Comprising a Quantum Well Laser. US Patent Number 5,448,585

  2.       G.L. Belenky, R.F. Kazarinov, K. Kojima, L. Reynolds

Article Comprising a Semiconductor Laser with Carrier Stopper Layer. US Patent Number 5,539,762

     

LIST OF PUBLICATIONS:

 

REVIEWS

1.                  Electronic and vibrational spectra of III-VI layered semiconductors (with V.Stopachinski ) Sov. Phys. Usp., 26, 497-529, 1983

2.                  Deformation effects in layer crystals ( with E. Salaev and R. Suleimanov ) Sov. Phys. Usp., 31, 433-455, 1988

3.                  Advances in measurement of physical parameters of semiconductor lasers (with G.Shtengel, M.Hybertsen, R. Kazarinov, D.Ackerman)  J. High Speed Electron. and Syst. 9, 901-940,1999

 

REFEREED PAPERS (selected):

1.      G.L.Belenkii, E.B.Ermolovich, N.B.Lukyanchikova "Determination of the radiative yield of the electron capture in CdSe" Sov. Phys. Solid State, 9, 2626, 1968

2.      M.K.Sheinkman, I.B.Ermolovich, G.L.Belenkii

      "Nature of infrared luminescence in CdSe" Sov. Phys. Solid State, 10, 1394, 1968

3.      G.L.Belenkii, A.K.Lubchenko, M.K.Sheinkman

      "Investigation of 0.93 mkm luminescence of CdSe and its relationship to the photoconductivity" Sov. Phys. Semiconductors, 2, 445, 1968

4.      G.L.Belenkii, N.V.Gavrilenko, I.Ya.Gorodetskii

      "Recombination processes in grain-oriented CdSe thin films" Ukr. Fiz. Zh., 13, 1127, 1969

5.   M. K.Sheinkman, V.A.Tygai, G.L.Belenkii

      "Investigation of the nature of the sensitization of CdSe crystals" Ukr. Fiz. Zh., 13, 1037, 1969

6.       M.K.Sheinkman, I.B.Ermolovich, G.L.Belenkii

      "Mechanisms of orange, red and infrared luminescence in CdS" Sov. Phys. Solid State, 10, 2069,1969

7.      G.L.Belenkii, M.K.Sheinkman

      "Mechanism of 0.82 luminescence in CdS" Sov. Phys. Semiconductors, 2, 1280, 1969

8.   M. K.Sheinkman, G.L.Belenkii "Radiative recombination in inactivated ZnSe single crystals" Sov. Phys. Semiconductors, 2, 1360, 1969

9.      G.B.Abdullaev, M.Kh.Alieva, G.L.Belenkii

      "On sensitizing recombination centers in GaSe single crystals" Phys. Stat. Solidi, 37, 571, 1970

10.      G.B.Abdullaev, M.Kh.Alieva, G.L.Belenkii, N.M.Krolevets

      "Infrared luminescence of doped single crystals of GaSe" Ukr. Fiz. Zh., 16, 1806, 1971

11.      G.B.Abdullaev, G.L.Belenkii, S.H.Ryvkin, V.M.Salmanov

      "Photoconductivity of GaSe excited by ruby laser radiation" Sov. Phys. Semiconductors, 5, 328, 1971

12. G.A. Akhmedov, A.A. Agaeva, G.L. Belenkii  "The influence of electric field on photoconductivity of GaSe induced by laser radiation" Izv. Acad. Nauk Azerb. SSR, 2, 142, 1972

13.      G.A.Akhmedov, G.L.Belenkii, F.N.Kaziev, V.M.Salmanov

      "Investigation of the fast recombination channel in InSe under excitation by neodynium laser light"

Sov. Physica, 15, 1036, 1973

14.      G.B.Abdullaev, G.L.Belenkii, V.S.Larionkina, R.Kh.Nani

      "Optical memory effects in CdIn2S4" Sov. Phys. Semiconductor, 7, 561, 1974

15.      G.B.Abdullaev, G.L.Belenkii, V.Kh.Khalilov

      "Fine structure of ground state of excitons in GaSe" Sov. Phys. Semiconductors, 7, 559, 1974

16.      G.B.Abdullaev, G.L.Belenkii, E.Yu.Salaev, R.A.Suleimanov

      "Studies of edge luminescence of GaSe" Sov. Phys. Solid State, 16, 11, 1974

17.      G.L.Belenkii, T.G.Dilbazov, I.K.Neimanzade

"Photoconductivity of GaSe at low temperature" Izv. Akad. Nauk Azerb. SSR, 4, 47, 1975

18.      G.L.Belenkii, L.S.Larionkina, I.V.Markovich, R.Kh.Nani "Peculiarities of long time relaxation of photoconductivity CdIn2S4." Izv. Acad. Nauk Azerb. SSR, 4, 61, 1975

19.      S.G.Abdullaeva, G.L.Belenkii, R.A.Suleimanov

      "Excitons in solutions GaSxSe1-x" Sov. Phys. Semiconductors, 9, 108, 1975

20.      S.S.Ishenko,G.B.Abdullaev,G.L.Belenkii, V.Okulov, E.Yu.Salaev

      "ESR of Mn++ in single-crystal GaSe" Sov. Phys. Solid State, 17, 1168, 1975

21.      G.B.Abdullaev, G.L.Belenkii, M.Tagiev and E.Yu.Salaev "Two-mode nature of phonon reflections spectra of GaSxSe1-x" Sov. Phys Semiconductors, 9, 1313, 1975

22.      G.L.Belenkii, R.Kh.Nani, E.Yu.Salaev and R.A.Suleimanov "Edge luminescence and light absorption in GaSxSe1-x solid solution at low temperatures" Phys. Status Sol.(a), 31, 707, 1975

23.      G.L.Belenkii, T.G.Dilbazov, R.Kh.Nani, E.Yu.Salaev

      "Edge luminescence of GaSe and GaS caused by impurities" Ukr. Fiz. Zh., 21, 328, 1976

24.      G.L.Belenkii "Characteristic features of exciton absorption spectra of GaSe at 4.2K"

      Sov. Phys. Semiconductors, 10, 717, 1976

25.      G.B.Abdullaev, G.L.Belenkii, E.Yu.Salaev

      "Interlayer interaction and exciton spectrum of GaSe" IL Nuovo Cimento, 388, 469, 1977

26.      G.L.Belenkii, M.O.Godzhaev, E.Yu.Salaev

      "Indirect excitons in gallium sulfide" JETP Lett., 26, 263, 1977

27.      G.L.Belenkii, L.N.Alieva, R.Kh.Nani and E.Yu.Salaev

      "Vibrational spectrum of InSe" Phys. Status Solidi, 82(a), 705, 1977

28.      G.L.Belenkii, E.Yu.Salaev, R.Kh.Nani, R.A.Suleimanov

      "Radiative decay of indirect excitons in GaSe" Sov. Phys. Semiconductors, 11, 506, 1977

29.      G.L.Belenkii, L.N.Alieva, M.A.Gezalov, R.Kh.Nani

      "Energy spectrum and structure of Ga1-xInSe crystals" Sov. Phys. Semiconductors, 12, 60, 1978

30.      G.L.Belenkii, L.N.Alieva, R.Kh.Nani

      "Spectra of the lattice reflectivity of mixed III-VI crystals" Sov. Solid State Phys., 20, 1860, 1978

31.      G.L.Belenkii, L.N.Alieva, R.Kh.Nani and E.Yu.Salaev

      "Vibrational spectra of GaTe" Sov. Solid State Phys., 20, 544, 1978

32.      G.B.Abdullaev, G.L.Belenkii, I.K.Neimanzade "Photostimulated oscillations of semiconductor plate in an electric field" Sov. Tech. Phys. Lett., 4, 428, 1978

33.      G.L.Belenkii and M.O.Godzhaev "Excitons in gallium sulfide" Phys. Status Solidi, 85(a), 453, 1978

34.      V.S.Bagaev, G.L.Belenkii, V.V.Zaitzev, E.Yu.Salaev, V.B.Stopachinskii

      "Hot luminescence in gallium selenide" Sov. Phys. Solid State, 21, 1275, 1979

35. L.N.Alieva, G.L.Belenkii, I.I.Reshina, E.Yu.Salaev "Raman scattering of light and interlayer interaction in InSe crystals" Sov. Phys. Solid State, 21, 90, 1979

36.      S.S.Ivchenko, V.I.Konovalov, S.M.Okulov, G.L.Belenkii and E.Yu.Salaev

      "Influence of temperature on ESR of Mn2+ and antiferromagnetic inclusions in layered GaSe:Mn crystals" Sov. Phys. Solid State, 21, 174, 1979

37.      G.L.Belenkii, M.O.Godzhaev. N.T.Mamedov, E.Yu.Salaev and R.A.Suleimanov "The nature of energy bands of III-VI layered crystals near the absorption edge" Phys. Status Solidi, 53A, 137, 1979

38.      V.S.Bagaev, G.L.Belenkii, V.V.Zaitzev, E.Yu.Salaev, V.B.Stopachinskii

      "Characteristics of the temperature dependence of the radiative recombination intensity of

      GaSxSe1-x crystals" JETP Lett., 29, 46, 1979

39.      G.L.Belenkii "Nature of three-dimensional electronic states near the absorption edge of layer III-YI crystals" Sov. Phys. Semiconductors, 13, 240, 1980

40.      G.L.Belenkii, E.Yu.Salaev, R.A.Suleimanov, E.I.Mirsoev "Effect of uniaxial stress on exciton spectra in GaSe" Sov. Phys. Solid State, 22, 1842, 1980

41.      G.L.Belenkii, E.Yu.Salaev, R.A.Suleimanov "Radiative recombination in GaSe due to internal structure defects" Sov. Phys. Solid State, 22, 1476, 1980

42.      S.G.Abdullaeva, G.L.Belenkii and N.T.Mamedov "Near-band-edge optical properties of TlGaS2xSe2(1-x)" Phys. Status Solidi (b), 102, K19, 1980

43.      G.L.Belenkii, M.O.Godzhaev, R.Kh.Nani, E.Yu.Salaev "Influence of izoelectronic oxygen impurities on the edge luminescence spectrum of GaSe" Sov. Phys. Semiconductors, 14, 1420, 1980

44.      G.L.Belenkii, I.K.Neimanzade, E.Yu.Salaev

      "Oscillations of photocurrent in layer semiconductors due to the internal interference of light"

       Sov. Phys. Semiconductors, 15, 717, 1981

45.      S.G.Abdullaeva, G.L.Belenkii, N.T.Mamedov

      "Exciton states in TlGaS2xSe2(1-x) semiconductors" Sov. Phys. Semiconductors, 15, 540, 1981

46.      G.L.Belenkii, E.Yu.Salaev, R.A.Suleimanov, E.I.Mirzoev "The influence of pressure on the electronic spectra of III-VI semiconductors" Phys. Status Solidi, 63a, 97, 1981

47.      S.G.Abdullaeva, G.L.Belenkii, M.O.Godzhaev and N.T.Mamedov

      "Excitons in TlGaS2" Phys. Status Solidi (b), 103, K 61, 1981

48.      G.L.Belenkii, S.G.Abdullaeva, A.V.Solodukhin and R.A.Suleimanov

      "Thermal expansion of GaS and TlGaS2" Solid State Commun., 44, 1613, 1982

49.      G.L.Belenkii, R.A.Suleimanov "The energy spectra of uniaxially deformed layered semiconductors III-YI" Solid State Commun., 41, 549, 1982

50.      G.L.Belenkii, E.Yu.Salaev, R.A.Suleimanov and N.A.Abdullaev "The nature of temperature dependence of energy gaps in layered semiconductors III-VI" Solid State Commun., 47, 263, 1983

51.      G.L.Belenkii, V.B.Stopachinskii "Electronic and vibrational spectra of III-VI layered semiconductors" Sov. Phys. Usp., 26, 497, 1983

52. S.G. Abdullaeva, G.L.Belenkii, R.Kh.Nani, E.Yu.Salaev "Temperature-induced shift of an exciton band and deformation effects in layered TlGaS2 crystals" Sov. Phys. Semiconductors, 17, 1320, 1983

53.      G.L.Belenkii, R.A.Suleimanov "Applicability of the virtual crystal model to III-VI layer semiconductors" Sov. Phys. Solid State, 26, 2233, 1984

54.      G.L.Belenkii, R.A.Suleimanov, N.A.Abdullaev and V.Ya.Stenshraiber "Thermal expansion of layered crystals, the Lifshitz model" Sov. Phys. Solid State, 26, 2142, 1984

55.      G.L.Belenkii and M.O.Godzhaev "Characteristics of radiative recombination in indium selenide at different optical excitation densities" Sov. Phys. Solid State, 26, 501, 1984

56.      G.L.Belenkii, V.A.Goncharov, Yu.A.Osipian, R.A.Suleimanov "Radiative recombination spectra of plastically deformed gallium selenide" Sov. Phys. Solid State, 26, 1983, 1984

57.      N.A.Abdullaev, E.Yu.Salaev, R.A.Suleimanov, N.A.Abdullaev

      "Thermal expansion and phase transition of TlInS2" Solid State Commun., 53, 601, 1985

58.      G.L.Belenkii, E.Yu.Salaev, R.A.Suleimanov, N.A.Abdullaev

      "The nature of negative linear expansion in layered crystals" Solid State Commun., 53, 961, 1985

59.      G.B.Abdullaev, G.L.Belenkii, M.O.Godzhaev, E.T.Aliev "Electron-hole plasma and electron-hole liquid in layered InSe" Solid State Commun., 56, 961 1985

60. E.T.Aliev, V.S.Bagaev, G.L.Belenky, M.O.Godzhaev

      "High-temperature electron-hole liquid in layered gallium sulfide" JETP Lett., 43, 566, 1986

61.      N.A.Abdullaev, L.N.Alieva, G.L.Belenkii, M.Nezimetdinova "Thermal expansion of TlSe and its optical properties" Sov. Phys. Semiconductors, 13, 1066, 1986

62.      G.B.Abdullaev, E.A.Aliev, G.L.Belenkii, M.O.Godzhaev "Temporal evolution of density of an electron-hole liquid in indium selenide" Sov. Phys. Solid State, 28, 1629, 1986

63.      G.L.Belenkii, M.O.Godzhaev, E.Yu.Salaev and E.T.Aliev "High-temperature electron-hole liquid in layered gallium selenide" J.Appl. Phys. Commun., 6, 111, 1986

64. G. L.Belenkii, M.O.Godzhaev, E.Yu.Salaev and E.T.Aliev ,"High-temperature electron-hole liquid in layered InSe, GaSe, GaS crystals" Sov. Phys. JETP, 64, 1117, 1986

65.      G.L.Belenkii, M.O.Godzhaev, V.N.Zverev

      "Observation of the region of 2E electron gas in layered InSe" JETP Lett., 43, 770, 1986

66.  G.L.Belenkii, E.Yu.Salaev and R.A.Suleimanov.

"Deformation effects in layer crystals" Sov. Phys. Usp., 31, 433, 1988

67.      G.L.Belenkii "Electron-hole liquid and two dimensional electron gas in layered semiconductors III-IV." Sov. Phys. Usp., 31, 955, 1988

68.      G.L.Belenkii, E.A.Virodov, V.N.Zverev

      "Quantum Hall effect in layered crystals of InSe" Sov. Phys. JETP, 67, 2548, 1988

69.      G.L.Belenkii, N.A.Abdullaev, V.N.Zverev and V.Ya.Stenshraiber

      "Nature of the conductivity anisotropy and distinctive features in the localization of electrons in layered indium selenide" JETP Lett., 47, 584, 1988

70.      G.L.Belenkii, E.A.Virodov, V.V.Zverev "Quantum transport studies of electron accumulation layers in InSe bulk crystals" IL. Nuovo Cimento, 11 D, 1571, 1989

71.      G.L.Belenky, S.M.Green, A.Roytburd, C.J.Lobb, S.J.Hagen, R.L.Greene, M.Forrester and

      J.Talvacchio "Effect of stress along the ab plane on the Jc and Tc of YBa2Cu3O7 thin films"

 Phys. Rev,. 44, 10117, 1991

72.      M.Mastrapasqua, S.Luryi, G.L.Belenky, P.A.Garbinski, D.O.Sivco and A.Y.Cho

      "Multiterminal light emitting logic device electrically reprogrammable between OR and NAND functions" IEEE Trans.Electr. Dev., 40 , 1371-1377, 1993; 1992 - IEDM Tech. Digest

73.      G.L.Belenky, P.A.Garbinski, S.Luryi, M.Mastrapasqua, A.Y.Cho, R.A.Hamm, T.R.Hayes, E.J.Laskowski, D.L.Sivco and P.R.Smith

      "Collector-up light emitting charge injection transistors in n-InGaAs/InAlAs/p-InGaAs and n-InGaAs/InP/p-InGaAs heterostructures" J. Appl. Phys., 73, 8618-8027 ,1993

74.      G.LBelenky, P.A.Garbinski, P.R.Smith, S.Luryi, A.Y.Cho, R.A.Hamm, D.L.Sivco

      "Microwave performance of top-collector charge injection transistors on InP substrate"       Semiconductors Science & Technology, 9, 1215, 1994;1993 - IEDM Tech. Digest 1993, p.423

75.      G.L.Belenky, A.Kastalsky, S.Luryi, P.A.Garbinski. A.Y.Cho, D.L.Sivco "Measurement of the effective hole temperature under hot electron injection in InGaAs/InAlAS heterostructure" Appl. Phys. Letter, 64, 2247,1994

76.      G.L.Belenky, R.F.Kazarinov, J.Lopata, S.Luryi, T.Tanbun-Ek, P.A.Garbinski

"Direct measurement of the carrier leakage out of the active region in InGaAsP/InP laser

heterostructures" IEEE Trans. Electr. Dev., 42, 215,1995

77.      R.F.Kazarinov, G.L.Belenky "Novel design of semiconductor lasers for optical communication" Physics and Simulation of Optoelectronic Devices, III ,Volume 2399, p386, 1995

78.      R.F.Kazarinov, G.L.Belenky "Novel design of AlGaInAs/InP lasers operating at 1.3mm" IEEE J. of Quant. Electron., 31,423, 1995

79.      M.Y.Frankel, G.L.Belenky, S.Luryi, T.F.Carruthers, M.L.Dennis, AY.Cho, R.A.Hamm and D.L.Sivco "Carrier dynamic and photodetection in charge injection transistors" J. Appl. Phys., 79, 3312, 1996;

80.      G.L.Belenky, L.Reynolds, R.F.Kazarinov, S.Swamatanian, S.Luryi, J.Lopata

      "Effect of p-doping profile on the performance of InGaAsP/InP MQW lasers" IEEE J. of Quant. Electron, 32, 1450, 1996;

81.      G.E.Shtengel, R.F.Kazarinov, G.L.Belenky and C.L.Reynolds "Wavelength chirp and carrier temperature dependence on current in MQW InGaAs/InP Laser" IEEE J. of Quant. Electron., 33, 1396, 1997

82.      G.E.Shtengel, P.A.Morton, R.F.Kazarinov, D.A.Ackerman, M.S.Hybertsen, G.L.Belenky and C.L.Reynolds "Experimental study of physical parameters of semiconductor lasers" Physics and Simulation of Optoelectronic Devices, V, Volume 2994, 678, 1997

83. Mikhail V. Kisin, Vera B. Gorfinkel, Michael A. Stroscio, Gregory Belenky and Serge Luryi "Influence of complex phonon spectra on intersubband optical gain" J. Appl. Phys., 82, 2031, 1997

84.      G.L.Belenky, D.V.Donetsky, C.L.Reynolds Jr., R.F.Kazarinov, G.E.Shtengel, S.Luryi and J.Lopata "Temperature performance of 1.3 mm InGaAsP/InP lasers with different profile of p-doping." IEEE Photon.Techn. Letters, 9, 1558,1997

85. Mikhail V. Kisin, Michael A. Stroscio, Gregory Belenky, Vera B. Gorfinkel, and Serge Luryi "Effects of interface phonon scattering in three-interface heterostructures" J. Appl. Phys., 83, 1-7, 1998

86.  Mikhail V. Kisin, Michael A. Stroscio, Gregory Belenky, and Serge Luryi “Electron-plasmon relaxation in quantum wells with inverted subband occupation” Appl. Phys. Letters, 734, 2075,1998

87.      D.V.Donetsky, G.L.Belenky, D.Z.Garbuzov, H.Lee, R.U.Martinelly, G.Taylor, S.Luryi, J.C.Connolly, "Direct measurements of heterobarrier leakage current and modal gain in 2.3 mm double QW p-substrate InGaAsSb/AlGaAsSb broad area lasers" IEE Electron. Lett., 35, 298, (1999)

88.  D.Z.Garbuzov, H.Lee, V.Khalfin, R.Martinelli , J.C.Connolly and G.L.Belenky “2.3-2.7 mm room temperature CW operation of InGaAsSb/A1GaAsSb broad waveguide SCH-QW diode lasers” IEEE Photon.Techn. Letter, 11, 794-796, (1999).

89.  G.L.Belenky, C.L.Reynolds Jr., D.V.Donetsky, G.E.Shtengel, M.Hybertsen, M.A.Alam, G.A.Baraff, R.K.Smith, R.F.Kazarinov, J.Winn, L.E.Smith “Role of p-doping profile and regrowth on the static characteristics of 1.3 mm MQW InGaAsP/InP lasers. Experiment and modeling" IEEE J. of Quant. Electron, 35,1515, (1999)

90.  G. Belenky, M. Dutta, V. Gorfinkel, G.I. Haddad, G.J. Iafrate, K.W. Kim, M. Kisin, S. Luryi, M.A. Stroscio, J.P. Sun, H.B. Teng, S.G. Yu. “Tailoring of optical phonon modes in nanoscale semiconductor structures: role of interface-optical phonons in quantum-well lasers”, Physica B 263, 462, (1999).

91.  M. Stroscio, M. Kisin, G. Belenky, S. Luryi. “Phonon enhanced inverse population in asymmetric double quantum wells”. Appl. Phys. Lett., 75, 3258 (1999)

92.  M.Maiorov, J.Wang,, D. Baer, H. Lee, G. Belenky, R.Hanson, J.Connolly, D.Garbuzov, “New room temperature CW InGaAsSb/AlGaAsSb QW ridge diode lasers and their application to CO measurements near 2.3 um” SPIE vol 3855, 62-71,(1999)

93.  M. Kisin, M. Stroscio, G. Belenky, S. Luryi. “Electron-plasmon resonance in quantum wells with    inverted subband population”. Physica E5, 196, (2000)

94.  G. Belenky , C.L. Reynolds Jr. ,L. Shterengas, M.S. Hybertsen, D.V. Donetsky, G.E. Shtengel, and S. Luryi, “Effect of p-doping on temperature dependence of differential gain in FP and DFB 1.3mm InGaAsP/InP multiple quantum well lasers”. Photon.Techn. Letter,  2000

95. L. Shterengas, R. Menna, W. Trussell, D. Donetsky, G. Belenky, J. Connolly, D. Garbuzov, “Effect of heterobarrier leakage on the performance of high power 1.5-mm InGaAsP MQW lasers”. J. Appl. Phys., 88, 2211,2000

 

REFEREED CONFERENCE PAPERS (selected):

1.      G.L.Belenkii, M.O.Godzhaev, V.N.Zverev

      "Shubnikov-de Haas oscillations on two-dimensional electrons in InSe layered crystals" Proc.

      18th  Int. Conf. on the Physics of Semiconductors, Stockholm, 1986;  World Scientific 1987, 1807

2.      M.Mastrapasqua, S.Luryi, G.L.Belenky, P.A.Garbinski, D.O.Sivco and A.Y.Cho

      "Multiterminal light emitting logic device electrically reprogrammable between OR and NAND functions" IEDM Tech. Digest, 1992

3.      G.L.Belenky, S.Luryi, M.Mastrapasqua, P.A.Garbinski, A.Y.Cho, R.A.Hamm, T.R.Hayes, E.J.Laskowski, D.L.Sivco "Top-collector light-emitting charge injection transistors and logic elements" CLEO 1993 Technical Digest, p.376,

4.      G.LBelenky, P.A.Garbinski, P.R.Smith, S.Luryi, A.Y.Cho, R.A.Hamm, D.L.Sivco

      "Microwave performance of top-collector charge injection transistors on InP substrate"      IEDM Tech. Digest 1993, p.423

5.      G.L.Belenky, A.Kastalsky, S.Luryi, P.A.Garbinski. A.YCho, D.L.Sivco "Measurement of the effective hole temperature under hot electron injection in InGaAs/InAlAS heterostructur" ISDRS Charlottesville 1993 Technical Digest, p. 189

6.      G.L.Belenky, L.Reynolds, R.F.Kazarinov, S.Swamatanian, S.Luryi, J.Lopata

      "Effect of p-doping profile on the performance of InGaAsP/InP MQW lasers" 15thInt'l Laser Sem. Conf. Haifa 1996 Technical Digest, p. 69

7.   M. V. Kisin, V. B. Gorfinkel, M. A. Stroscio, G. Belenky and S. Luryi "Influence of complex phonon spectra on intersubband optical gain" CLEO 1997 Technical Digest , p. 425,

8.      G.L.Belenky, D.V.Donetsky, C.L.Reynolds Jr., R.F.Kazarinov, G.E.Shtengel, S.Luryi and J.Lopata "Temperature performance of 1.3 mm InGaAsP/InP lasers with different profile of p-doping" CLEO 1997 Technical Digest, p. 157

9.      D.V.Donetsky, C.L.Reynolds Jr., G.L.Belenky, G.E.Shtengel, R.F.Kazarinov, S.Luryi "Optimization of p-doping profile of InGaAsP/InP MWQ lasers for high temperature operation" CLEO 1998 Technical Digest, p. 302

10.      G.L.Belenky, D.V.Donetsky, C.L.Reynolds Jr., G.E.Shtengel, R.F.Kazarinov, S.Luryi

      "1.3mm InGaAsP/InP MQW laser for high temperature operation. Experiment and modeling" CLEO/EUROPE Glasgow, Scotland, 1998 Technical Digest

11.      D.Z.Garbuzov, R.J.Menna, M.A.Maiorov, H.Lee, V.Khalfin, L.A.DiMarco, R.U.Martinelli, G.L Belenky, J.C.Connolly "2.3-2.7 mm room temperature CW operation of InGaAsSb/A1GaAsSb broad waveguide SCH-QW diode lasers and single- mode ridge-waveguide SCH-QW lasers". SPIE 1999, San Jose Published in Plain Semiconductor Lasers, Volume 3628, 124, 1999

12.      D.V.Donetsky, G.L.Belenky, S.Luryi, D.Z.Garbuzov, H.Lee, R.U.Martinelli, J.C.Connolly "Current and temperature dependencies of the modal gain in wide-aperture 2.3 mm InGaAsSb/AlGaAsSb quantum-well lasers" CLEO'99, Baltimore, May 1999,

13.  M.S.Hybertsen, M.A. Alam, G.L.Belenky, G.A.Baraff, R.K.Smith, G.E.Shtengel, C.L.Reynolds, Jr., R.F.Kazarinov, D.V.Donetsky "Role of doping profile on semiconductor laser performance: simulation and experiment" CLEO'99, Baltimore, May 1999, invited talk

14.  G.L.Belenky, D.Z.Garbuzov, D.V.Donetsky, H.Lee, R.U.Martinelli, J.C.Connolly, “Direct measurements of the optical loss, gain and carrier leakage in room temperature operated 2.3 mm InGaAsSb/AlGaAsSb QW lasers”, 11th Meeting on Electro-Optics & Microelectronics, Tel Aviv, Israel, November 9-11 1999

15. G.L.Belenky, C.L.Reynolds, Jr., D.V.Donetsky, M.S.Hybertsen, L.Shterengas, G.E.Shtengel, R.F.Kazarinov, Characterization of heterolasers with different p-doping profile, Proc. of the Conf. Photonics West, Physics and Simulation of Optoelectronic Devices VIII, San Jose, January 2000, 3944, invited talk.

16. L.Shterengas, C.L.Reynolds, Jr., G.Belenky, M.Hybertsen, D.Donetsky, G.Shtengel, "Differential gain in 1.3 mm InGaAsP/InP MQW lasers with p-doped active region", Intern. Conf. on Lasers and Electro-Optics  (CLEO' 2000), San-Francisco, May 2000, Technical Digest, p.174.

17.  R.Menna, L.Shterengas, W.Trussell, D.Donetsky, M.Maiorov, G.Belenky, J.Connolly, D.Garbuzov, "Effect of p-cladding layer doping on pulsed, high power 1.5 mm InGaAsP/InP MQW lasers", 12 Intern. Conf. On Indium Phosphide and Related Materials (IRPM '2000), Williamsburg, Virginia. May 2000,

18.   B. Laikhtman, S. Luryi, and G. Belenky “Lateral current injection laser based on type II material system” 25th International Conference on the   Physics of Semiconductors Osaka, Japan. September 17-22, 2000

19.    G.L.Belenky, D.Z.Garbuzov, D.V.Donetsky, H.Lee, R.U.Martinelli, J.C.Connolly, “Measurements of the optical loss and  gain 2.3-2.5 mm InGaAsSb/AlGaAsSb broad area and ridge lasers” CLEO/Europe’2000 , Nice, France. September 10-15, 2000

20.    M. Kisin, M.A. Stroscio, G. Belenky, and S. Luryi, “Interband Tunneling in InAs/GaSb Type-II Cascade Structure” 17th IEEE International Semiconductor Laser Conference, 25 – 29,September, 2000, Monterey, CA, USA.