Dmitri Donetski (Donetsky)

Associate Professor

247 Light Engineering Building 
Department of Electrical and Computer Engineering
Stony Brook University
Stony Brook, NY11794-2350

Phone: 631-632-8411

E-mail: dmitri.donetski@stonybrook.edu

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Research Interests

Molecular beam epitaxy of III-V semiconductor compound heterostructures. Growth on lattice mismatched substrates. Strained layer superlattices. Carrier recombination and transport in semiconductors. Design and technology of integrated circuits.

Employment

 

2010 - present Associate Professor, Dept. of ECE, Stony Brook University

2004 - 2010 Assistant Professor, Dept. of ECE, Stony Brook University

1996 - 2004 Research Assistant, Lecturer, Dept. of ECE, Stony Brook University

1987 - 1996 Leading Engineer, University Instructor, Department of Semiconductor

Physics and Nanoelectronics, St. Petersburg State Technical University, Russia

Education

2000, Ph.D. in Electrical Engineering from SUNY at Stony Brook, NY

Advisors: Professor G. Belenky, Professor S. Luryi

Thesis Title: Temperature performance of InP and GaSb-based laser diodes

1996, Ph.D. in Physics from St. Petersburg State Technical University, Russia

Advisor: Professor L. E. Vorobjev

Thesis Title: Optical phenomena on hot holes in semiconductors and quantum well structures

1987, B.Sc. with honors in Optical and electronic devices and systems from St. Petersburg State Technical University, Russia

Teaching

ESE118 Digital Logic Design, ESE411 Analog Integrated Circuits,

EEO218 Digital Logic Design, EEO219 Digital Logic Design Lab, EEO311 Electronics II

Graduate students advised and co-advised

Jinghe Liu (Ph.D), Kevin Kucharczyk (Ph.D), Ye Xu (Ph.D), Youxi Lin (Ph.D), Ding Wang (Ph.D), Takashi Hosoda (Ph.D), Sergei Anikeev (Ph.D), Alex Gourevitch (Ph.D), Zichen Zhang (M.Sc.), Muralidhar Kumar (M.Sc), Ning Gu (M.Sc)

 

Publications

120 papers in referred journals and proceedings, over 60 conference presentations.

A chapter in the book Advanced semiconductor heterostructures: novel devices, potential device applications and basic properties, ed. by M. Dutta, M. Stroscio, World Scientific, 2003, ISBN 981238-389-5

 

https://scholar.google.com/citations?hl=en&user=nLSXm78AAAAJ&view_op=list_works&sortby=pubdate

 

Invited talks

 

1.       Measurements of carrier transport and carrier recombination in InAsSb-based structures, Center for Semiconductor Modeling (CSM) Consortium, Annual meeting, ARL, 2020.

2.       Measurements of carrier transport in type-2 SLS, CSM meeting, Boston University, 2019.

3.       Sb-based materials for infrared photodetector technology, Lecture, Dept. of EE, SUNY at Buffalo, 2011.

4.       Shockley-Read-Hall and Auger recombination in 0.5-0.6 eV GaSb-based photonic devices, SPIE Conference Optics East, Boston, MA, 2006.

5.       Carrier lifetime in InGaAs materials, Thermophotovoltaic Research Program workshop, Bechtel Bettis, Inc., Pittsburg, PA, 2005.

6.       Time-resolved PL measurements in InGaAs double heterostructures and TPV devices, TPV vendor meeting, MIT Lincoln Laboratory, MA, 2005.

7.       Minority carrier characterization of lattice-mismatched InGaAs materials, Thermophotovoltaic Research Program workshop, Sarnoff Corp., NJ, 2005.

 

Selected papers (2011-present)

 

1.     Electrical modulation of the LWIR absorption and refractive index in InAsSb-based strained layer superlattice heterostructures, J. Liu, D. Donetsky, H. Jiang, G.Kipshidze, L. Shterengas, G. Belenky, W. L. Sarney and S. P. Svensson, J. Appl. Phys., in press (2020).

2.     Influence of strain on the InAsSb composition, W.L. Sarney, S.P. Svensson, A.C. Leff, D.V. Donetsky, J. Liu, G.L. Belenky, J. Vac. Sci. Technol., B, 38, 3, 032206 (2020).

3.     InAsSb-based heterostructures for infrared light modulation, D. Donetsky, J. Liu, G. Kipshidze, G. L. Belenky, W. L. Sarney, and S. P. Svensson, Appl. Phys. Lett., 115 (8), 081102 (2019).

4.     Temperature dependent Hall effect in InAsSb with a 0.11 eV 77 K-bandgap, S.P. Svensson, W.A. Beck, W.L. Sarney, D. Donetsky, S. Suchalkin, G. Belenky, Appl. Phys. Lett., 114 (12), 122102 (2019).

5.     Ultra-short period Ga-free superlattice growth on GaSb, W. L. Sarney, S. P. Svensson, M. K. Yakes, Y. Xu, D. Donetsky, G. Belenky, J. of Appl. Phys. 124 (3), 035304 (2018).

6.     Investigation of periodically driven systems by x-ray absorption spectroscopy using asynchronous data collection mode, H. Singh, D. Donetsky, J. Liu, K. Attenkofer, B. Cheng, J. R. Trelewicz, I. Lubomirsky, E. Stavitski, A.I. Frenkel, Review of Scient. Instr., 89 (4) 045111 (2018).

7.     Bulk InAsSb with 0.1 eV bandgap on GaAs, W. L. Sarney, S. P. Svensson, Y. Xu, D. Donetsky, G. Belenky, J. of Appl. Phys., 122 (2), 025705 (2017).

8.     Materials design parameters for infrared device applications based on III-V semiconductors, S. P. Svensson, W. L. Sarney, D. Donetsky, G. Kipshidze, Y. Lin, L. Shterengas, Y. Xu, G. Belenky, J. of Appl. Optics, 56 (3), B58-B63 (2017).

9.     Interband absorption strength in long-wave infrared type-II superlattices with small and large superlattice periods compared to bulk materials, I. Vurgaftman, G. Belenky, Y. Lin, D. Donetsky, L. Shterengas, G. Kipshidze, Appl. Phys. Lett., 108 (22), 222101 (2016).

10.  Extremely small bandgaps, engineered by controlled multi-scale ordering in InAsSb, W. L. Sarney, S.P. Svensson, Y. Lin, D. Donetsky, L. Shterengas, G. Kipshidze, J. of Appl. Phys., 119 (21), 215704 (2016).

11.  Background and interface electron populations in InAs0.58Sb0.42, S.P. Svensson, F.J. Crowne, H.S. Hier, W.L. Sarney, W.A. Beck, Y. Lin, Semicond. Sci. and Technol., 30 (3), 035018 (2015).

12.  AlInAsSb for M-LWIR detectors, W.L. Sarney, S.P. Svensson, D. Wang, D. Donetsky, G. Kipshidze, J. of Cryst. Growth, 425, 357-359 (2015).

13.  Development of bulk InAsSb alloys and barrier heterostructures for long-wave infrared detectors, Y. Lin, D. Donetsky, D. Wang, D. Westerfeld, G. Kipshidze, L. Shterengas, J. of Electron. Mater., 44 (10), 3360-3366 (2015).

14.  Lattice parameter engineering for III-V long wave infrared photonics, G. Belenky, Y. Lin, L. Shterengas, D. Donetsky, G. Kipshidze, S. Suchalkin, Electron. Lett., 51 (19), 1521-1522 (2015).

15.  Transport properties of holes in bulk InAsSb and performance of barrier long-wavelength infrared detectors, Y. Lin, D. Wang, D. Donetsky, G. Kipshidze, L. Shterengas, L.E. Vorobjev, Semicond. Sci. and Technol., 29 (11), 112002 (2014).

16.  Minority Carrier Lifetime in Beryllium-Doped InAs/InAsSb Strained Layer Superlattices, Y. Lin, D. Wang, D. Donetsky, G. Belenky, H. Hier, W.L. Sarney, S.P. Svensson, J. of Electron. Mater., 43 (9), 3184-3190 (2014).

17.  Structural and Optical Characteristics of Metamorphic Bulk InAsSb, Y. Lin, D. Wang, D. Donetsky, G. Kipshidze, L. Shterengas, G. Belenky, Intern. J. of High Speed Electronics and Systems, 23, 1450021 (2014).

18.  Metamorphic InAsSb-based barrier photodetectors for the long wave infrared region, D. Wang, D. Donetsky, G. Kipshidze, Y. Lin, L. Shterengas, G. Belenky, Appl. Phys. Lett., 103 (5), 051120 (2013).

19.  Infrared emitters and photodetectors with InAsSb bulk active regions, Y. Lin, D. Wang, D. Donetsky, G. Kipshidze, L. Shterengas, G. Belenky, Proc. of SPIE, Vol. 8704, 870410-1 (2013).

20.  Conduction-and Valence-Band Energies in Bulk InAs1-xSbx and Type-II InAs1-xSbx/InAs Strained-Layer Superlattices, Y. Lin, D. Wang, D. Donetsky, L. Shterengas, G. Kipshidze, G. Belenky, J. of Electron. Mater., 42 (5), 918 (2013).

21.  Metamorphic InAsSb/AlInAsSb heterostructures for optoelectronic applications, G. Belenky, D. Wang, Y. Lin, D. Donetsky, G. Kipshidze, L. Shterengas, Appl. Phys. Lett., 102 (11), 111108 (2013).

22.  Carrier lifetime measurements in long-wave infrared InAs/GaSb superlattices under low excitation conditions, D. Wang, D. Donetsky, S. Jung, G. Belenky, J. of Electron. Mater., 1-4 (2012).

21.  Unrelaxed bulk InAsSb with novel absorption, carrier transport, and recombination properties for MWIR and LWIR photodetectors, D. Wang, Y. Lin, D. Donetsky, L. Shterengas, G. Kipshidze, G. Belenky, SPIE Defense, Security, and Sensing, 835312-835312-11 (2012).

22.  InAs1-xSbx alloys with native lattice parameters grown on compositionally graded buffers: structural and optical properties, D. Wang, D. Donetsky, Y. Lin, G. Kipshidze, L. Shterengas, G. Belenky, Intern. J. of High Speed Electronics and Systems, 21 (01), 1250013 (2012).

23.  Band gap of InAs1− xSbx with native lattice constant, S. P. Svensson, W. L. Sarney, H. Hier, Y. Lin, D. Wang, D. Donetsky, Phys. Rev. B, 86 (24), 245205 (2012).

24.  Structural and luminescent properties of bulk InAsSb, W. L. Sarney, S. P. Svensson, H. Hier, G. Kipshidze, D. Donetsky, D. Wang, J. of Vac. Sci. & Technol. B, 30 (2), 02B105 (2012).

25.  Molecular beam epitaxy control and photoluminescence properties of InAsBi, S. P. Svensson, H. Hier, W. L. Sarney, D. Donetsky, D. Wang, G. Belenky, J. of Vac. Sci. & Technol. B, 30(2) 02B109 (2012).

26.  Properties of unrelaxed InAs1− XSbX alloys grown on compositionally graded buffers, G. Belenky, D. Donetsky, G. Kipshidze, D. Wang, L. Shterengas, W.L. Sarney, S.P. Svensson, Appl. Phys. Lett., 99 (14), 141116 (2011).

27.  Effects of carrier concentration and phonon energy on carrier lifetime in type-2 SLS and properties of InAs1-xSbx alloys, G. Belenky, G. Kipshidze, D. Donetsky, S.P. Svensson, W.L. Sarney, H. Hier, SPIE Defense, Security, and Sensing, 80120W-80120W-10 (2011).

28.  Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization, S. P. Svensson, D. Donetsky, D. Wang, H. Hier, F.J. Crowne, G. Belenky, J. of Cryst. Growth, 334 (1), 103-107 (2011).

29.  Effects of carrier concentration and phonon energy on carrier lifetime in type-2 SLS and properties of InAs1-XSbX alloys, G. Belenky, G. Kipshidze, D. Donetsky, S. P. Svensson, W. L. Sarney, H. Hier, Infrared Technology and Applications XXXVII 8012, 80120W (2011).