Here provided is a list of our earlier publications up to 2006.
• M.Mastrapasqua, S.Luryi, G.L.Belenky, P.A.Garbinski, D.O.Sivco, A.Y.Cho, “Multiterminal light emitting logic device electrically reprogrammable between OR and NAND functions,” IEEE Trans. Electr. Dev., 40, 1371 (1993); IEDM Tech. Digest (1992).
• G.L.Belenky, P.A.Garbinski, S.Luryi, M.Mastrapasqua, A.Y.Cho, R.A.Hamm, T.R.Hayes, E.J.Laskowski, D.L.Sivco, P.R.Smith, “Collector-up light emitting charge injection transistors in n-InGaAs/InAlAs/p-InGaAs and n-InGaAs/InP/p-InGaAs heterostructures,” J. Appl. Phys., 73, 8618 (1993).
• G.L.Belenky, P.A.Garbinski, P.R.Smith, S.Luryi, A.Y.Cho, R.A.Hamm, D.L.Sivco, “Microwave performance of top-collector charge injection transistors on InP substrate,” Semiconduct. Sci. Technol., 9, 1215 (1994); IEDM Tech. Digest, 423 (1993).
• G.L.Belenky, A.Kastalsky, S.Luryi, P.A.Garbinski, A.Y.Cho, D.L.Sivco, “Measurement of the effective hole temperature under hot electron injection in InGaAs/InAlAS heterostructure,” Appl. Phys. Lett., 64, 2247 (1994).
• G.L.Belenky, R.F.Kazarinov, J.Lopata, S.Luryi, T.Tanbun-Ek, P.A.Garbinski, “Direct measurement of the carrier leakage out of the active region in InGaAsP/InP laser heterostructures,” IEEE Trans. Electr. Dev., 42, 215 (1995).
• R.F.Kazarinov, G.L.Belenky, “Novel design of semiconductor lasers for optical communication,” Physics and Simulation of Optoelectronic Devices, III, 2399, 386 (1995).
• R.F.Kazarinov, G.L.Belenky, “Novel design of AlGaInAs/InP lasers operating at 1.3µm,” IEEE J. of Quantum Electron., 31, 423 (1995).
• M.Y.Frankel, G.L.Belenky, S.Luryi, T.F.Carruthers, M.L.Dennis, A.Y.Cho, R.A.Hamm, D.L.Sivco, “Carrier dynamic and photodetection in charge injection transistors,” J. Appl. Phys., 79, 3312 (1996).
• G.L.Belenky, L.Reynolds, R.F.Kazarinov, S.Swamatanian, S.Luryi, J.Lopata, “Effect of p-doping profile on the performance of InGaAsP/InP MQW lasers,” IEEE J. of Quant. Electron, 32, 1450 (1996).
• G.E.Shtengel, R.F.Kazarinov, G.L.Belenky, C.L.Reynolds, “Wavelength chirp and carrier temperature dependence on current in MQW InGaAs/InP Laser,” IEEE J. of Quant. Electron., 33, 1396 (1997).
• G.E.Shtengel, P.A.Morton, R.F.Kazarinov, D.A.Ackerman, M.S.Hybertsen, G.L.Belenky, C.L.Reynolds, “Experimental study of physical parameters of semiconductor lasers,” Physics and Simulation of Optoelectronic Devices V, 2994, 678 (1997).
• Mikhail V. Kisin, Vera B. Gorfinkel, Michael A. Stroscio, Gregory Belenky, Serge Luryi, “Influence of complex phonon spectra on intersubband optical gain,” J. Appl. Phys., 82, 2031 (1997).
• G.L.Belenky, D.V.Donetsky, C.L.Reynolds, Jr., R.F.Kazarinov, G.E.Shtengel, S.Luryi, J.Lopata, “Temperature performance of 1.3µm InGaAsP/InP lasers with different profile of p-doping,” IEEE Photon. Technol. Lett., 9, 1558 (1997).
• Mikhail V. Kisin, Michael A. Stroscio, Gregory Belenky, Vera B. Gorfinkel, Serge Luryi, “Effects of interface phonon scattering in three-interface heterostructures,” J. Appl. Phys., 83, 4816 (1998).
• Mikhail V. Kisin, Michael A. Stroscio, Gregory Belenky, Serge Luryi, “Electron-plasmon relaxation in quantum wells with inverted subband occupation,” Appl. Phys. Lett., 73, 2075 (1998).
• D.V.Donetsky, G.L.Belenky, D.Z.Garbuzov, H.Lee, R.U.Martinelly, G.Taylor, S.Luryi, J.C.Connolly, “Direct measurements of heterobarrier leakage current and modal gain in 2.3 µm double QW p-substrate InGaAsSb/AlGaAsSb broad area lasers,” IEE Electron. Lett., 35, 298 (1999).
• D.Z.Garbuzov, H.Lee, V.Khalfin, R.Martinelli , J.C.Connolly, G.L.Belenky, “2.3-2.7 µm room temperature CW operation of InGaAsSb/A1GaAsSb broad waveguide SCH-QW diode lasers,” IEEE Photon. Technol. Lett., 11, 794 (1999).
• G.L.Belenky, C.L.Reynolds, Jr., D.V.Donetsky, G.E.Shtengel, M.Hybertsen, M.A.Alam, G.A.Baraff, R.K.Smith, R.F.Kazarinov, J.Winn, L.E.Smith, “Role of p-doping profile and regrowth on the static characteristics of 1.3µm MQW InGaAsP/InP lasers. Experiment and modeling,” IEEE J. of Quantum Electron., 35, 1515 (1999).
• G.Belenky, M.Dutta, V.Gorfinkel, G.I.Haddad, G.J.Iafrate, K.W.Kim, M.Kisin, S.Luryi, M.A.Stroscio, J.P.Sun, H.B.Teng, S.G.Yu, “Tailoring of optical phonon modes in nanoscale semiconductor structures: role of interface-optical phonons in quantum-well lasers,” Physica B, 263, 462 (1999).
• M.Stroscio, M.Kisin, G.Belenky, S.Luryi, “Phonon enhanced inverse population in asymmetric double quantum wells,” Appl. Phys. Lett., 75, 3258 (1999).
• D.Z. Garbuzov, R.J. Menna, M.A. Maiorov, H. Lee, V. Khalfin, L.A. DiMarco, D.R. Capewell, R.U. Martinelli, G.L. Belenky, J.C. Connolly, “2.3- to 2.7-µm room-temperature cw operation of InGaAsSb/AlGaAsSb broad-contact and single-mode ridge-waveguide SCH-QW diode lasers,” Proc. SPIE, 3628, 124 (1999).
• M.Maiorov, J.Wang, D.Baer, H.Lee, G.Belenky, R.Hanson, J.Connolly, D.Garbuzov, “New room temperature CW InGaAsSb/AlGaAsSb QW ridge diode lasers and their application to CO measurements near 2.3 µm,” Proc. SPIE, 3855, 62 (1999).
• M.Kisin, M.Stroscio, G.Belenky, S.Luryi, “Electron-plasmon resonance in quantum wells with inverted subband population,” Physica E, 5, 196 (2000).
• G.Belenky, C.L.Reynolds, Jr., L.Shterengas, M.S.Hybertsen, D.V.Donetsky, G.E.Shtengel, S.Luryi, “Effect of p-doping on temperature dependence of differential gain in FP and DFB 1.3µm InGaAsP/InP multiple quantum well lasers,” IEEE Photon. Technol. Lett., 12, 969 (2000).
• L.Shterengas, R.Menna, W.Trussell, D.Donetsky, G.Belenky, J.Connolly, D.Garbuzov
"Effect of heterobarrier leakage on the performance of high power 1.5µm InGaAsP MQW lasers,” J. Appl. Phys., 88, 2211 (2000).
• M.Kisin, M.Stroscio, S.Luryi, G.Belenky, “Interband tunneling depopulation in type-II InAs/GaSb cascade laser heterostructure,” Physica E, 10, 576 (2001).
• D.V.Donetsky, D.Westerfeld, G.L.Belenky, R.U.Martinelli, D.Z.Garbuzov, J.C.Connolly, “Extraordinarily wide optical gain spectrum in 2.2-2.5µm In(Al)GaAsSb/GaSb quantum-well ridge-waveguide lasers,” J. Appl. Phys., 90, 4281 (2001).
• B.Laikhtman, S.Luryi, G.Belenky, “InAs/GaSb-based lateral current injection laser,” J. Appl. Phys., 90, 5478 (2001).
• G.L. Belenky, D.Z. Garbuzov, D.V. Donetsky, H. Lee, R.U. Martinelli, J.C. Connolly, “Direct measurements of the optical loss, gain and carrier leakage in room temperature operated 2.3µm InGaAsSb/AlGaAsSb QW lasers,” Electro-Optics and Microelectronics: Proceedings of the 11th International Meeting, Held in Tel Aviv, Israel, 9-11 November 1999 (2001).
• S.Suchalkin, D.Westerfeld, D.Donetski, S.Luryi, G.Belenky, R.Martinelli, I.Vurgaftman, J.Meyer, “Optical gain and loss in 3µm diode, “W” quantum-well lasers,” Appl. Phys. Lett., 80, 2833 (2002).
• G.Belenky, L.Shterengas, C.L.Reynolds Jr., M.W.Focht, M.S.Hybertsen, B.Witzigmann, “Direct measurement of lateral carrier leakage in 1.3µm InGaAsP MQW CMBH lasers,” IEEE J. Quantum Electron., 38, 1276 (2002).
• G.Belenky, L.Shterengas, C.W.Trussell, C.L.Reynolds, Jr., M.S.Hybertsen, R.Menna, “Trends in semiconductor laser design: Balance between leakage, gain and loss in InGaAsP/InP MQW structures,” Future Trends in Microelectronics: The Nano Millennium, edited by S. Luryi, J. Xu, A. Zaslavsky, Wiley, ISBN: 0-471-21247-4 (2002).
• M.V.Kisin, M.A.Stroscio, G.Belenky, S.Luryi, “Interband phonon assisted tunneling in InAs/GaSb heterostructures,” PHYSICA B, 316, 223 (2002).
• M.V.Kisin, M.A.Stroscio, G.Belenky, S.Luryi, “Electron-phonon resonance in InAs/GaSb type-II laser heterostructures,” Appl. Phys. Lett., 80, 2174 (2002).
• J.G.Kim, L.Shterengas, R.U.Martinelli, G.L.Belenky, D.Z.Garbuzov, W.K.Chan, “Room-temperature 2.5 µm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves,” Appl. Phys. Lett., 81, 3146 (2002).
• L.Shterengas, G.L.Belenky, A.Gourevitch, J.G.Kim, R.U.Martinelli, “Measurements of a-factor in 2–2.5 µm type-I In(Al)GaAsSb/GaSb high power diode lasers,” Appl. Phys. Lett., 81, 4517 (2002).
• D.Donetsky, S.Anikeev, G.Belenky, S.Luryi, C.A.Wang, G.Nichols, “Reduction of interfacial recombination in GaInAsSb/GaSb double heterostructures,” Appl. Phys. Lett., 81, 4769 (2002).
• B. Witzigmann, M.S. Hybertsen, C.L. Reynolds, Jr., G.L. Belenky, L. Shterengas, G.E. Shtengel, “Microscopic simulation of the temperature dependence of static and dynamic 1.3 ?m multi-quantum-well laser performance,” IEEE J. Quantum Electron., 39, 120 (2003).
• D. Westerfeld, S. Suchalkin, M. V. Kisin, G. Belenky, J. Bruno, R. Tober, “Experimental study of optical gain and loss in 3.4-3.6 µm interband cascade lasers,” IEE Proc. Optoelectron., 150, 293 (2003).
• S. Suchalkin, J. Bruno, R. Tober, D. Westerfeld, M. V. Kisin, G. Belenky, “Experimental study of the optical gain and loss in InAs/GaInSb interband cascade lasers,” Appl. Phys. Let., 83, 1500 (2003).
• M. V. Kisin, M. A. Stroscio, G. Belenky, S. Luryi, “Resonant phonon-assisted depopulation in type-I and type-II intersubband laser heterostructures,” Institute of Physics Conference Series, 174, 44, (2003).
• Gourevitch, G. Belenky, D. Donetsky, B. Laikhtman, D. Westerfeld, C. W. Trussell, H. An, Z. Shellenbarger, R. Martinelli, “1.47–1.49 µm InGaAsP/InP diode laser arrays,” Appl. Phys. Lett., 83, 617 (2003).
• J. G. Kim, L. Shterengas, R. U. Martinelli, G. L. Belenky, “High-power room-temperature continuous wave operation of 2.7 and 2.8 ?m In(Al)GaAsSb/GaSb diode lasers,” Appl. Phys. Lett., 83, 1926 (2003).
• S. Anikeev, D. Donetsky, G. Belenky, S. Luryi, C. A. Wang, J. M. Borrego, G. Nichols, “Measurement of the Auger recombination rate in p-type 0.54-eV GaInAsSb by time-resolved photoluminescence,” Appl. Phys. Lett., 83, 3317 (2003).
• G.L. Belenky, J.G. Kim, L. Shterengas, A. Gourevitch, R.U. Martinelli, “High power 2.3-µm laser arrays emitting 10 W CW at room temperature,” IEE Electron. Lett., 40, 737 (2004).
• L. Shterengas, G.L. Belenky, J.G. Kim, R.U. Martinelli, “Design of high-power room-temperature continuous-wave GaSb-based type-I quantum-well lasers with ?>2.5 µm,” Semicond. Sci. Tech., 19, 655 (2004).
• Laikhtman, A. Gourevitch, D. Donetsky, D. Westerfeld, G. Belenky, “Current spread and overheating of high power laser bars,” J. of Appl. Phys., 95, 3880 (2004).
• L. Shterengas, G.L. Belenky, A. Gourevitch, D. Donetsky, J.G. Kim, R.U. Martinelli, and D. Westerfeld, “High power 2.3-?m GaSb-based linear laser array,” IEEE Photon. Technol. Lett., 16, 2218 (2004).
• M.V. Kisin, S.D. Suchalkin, G. Belenky, J.D. Bruno, R. Tober, S. Luryi, “Analysis of the Temperature Performance of Type-II Interband Cascade Lasers,” Appl. Phys. Lett., 85, 4310 (2004).
• A. Wang, D. A. Shiau, P. G. Murphy, P. W. O'Brien, R. K. Huang, M. K. Connors, A. C. Anderson, D. Donetsky, S. Anikeev, G. Belenky, D. M. Depoy, G. Nichols, “Wafer bonding and epitaxial transfer of GaSb-based epitaxy to GaAs for monolithic interconnection of thermophotovoltaic devices,” J. of Electron. Mater., 33, 213 (2004).
• Westerfeld, S. Suchalkin, R. Kaspi, G. Belenky, “Absorption and single-pass gain measurements in optically pumped type-II midinfrared laser structures,” IEEE J. Quantum Electron., 40, 1657 (2004).
• C. A. Wang, D. A. Shaiu, D. Donetsky, S. Anikeev, G. Belenky, S. Luryi, “Effect of growth interruption on surface recombination velocity in GaInAsSb/AlGaAsSb heterostructures grown by organometallic vapor-phase epitaxy,” J. of Cryst. Growth, 272, 711 (2004).
• Thränhardt, I. Kuznetsova, C. Schlichenmaier, S. W. Koch, L. Shterengas, G. Belenky, J.-Y. Yeh, L. J. Mawst, N. Tansu, J. Hader, J. V. Moloney, W. W. Chow, “Nitrogen incorporation effects on gain properties of GaInNAs lasers: Experiment and theory,” Appl. Phys. Lett., 86, 201117 (2005).
• P.J. McCann, P. Kamat, Y. Li, A. Sow, H.Z. Wu, G. Belenky, L. Shterengas, J.G. Kim, R. Martinelli, “Optical pumping of IV-VI semiconductor multiple quantum well materials using a GaSb-based laser with emission at lambda=2.5 um,” J. Appl. Phys., 97, 053103 (2005).
• Gourevitch, B. Laikhtman, D. Westerfeld, D. Donetsky, G. Belenky, C. W. Trussell, Z. Shellenbarger, H. An, R. U. Martinelli, “Transient thermal analysis of InGaAsP-InP high-power diode laser arrays with different fill factors,” J. Appl. Phys., 97, 084503, (2005).
• Laikhtman, A. Gourevitch, D. Westerfeld, D. Donetsky, G. Belenky, “Thermal resistance and optimal fill factor of high power laser bar,” Semicond. Sci. Technol., 20, 1087 (2005).
• S. Suchalkin, L. Shterengas, M.V. Kisin, S. Luryi, G. Belenky, R. Kaspi, A. Ongstad, J.G.Kim, R.U.Martinelli, “Mechanism of the temperature sensitivity of mid-IR GaSb based semiconductor lasers,” Appl. Phys. Lett., 87, 041102 (2005).
• C.A. Wang, D.A. Shiau, D. Donetsky, S. Anikeev, G. Belenky, S. Luryi, “Extremely low surface recombination velocity in GaInAsSb/AlGaAsSb heterostructures,” Appl. Phys. Lett., 86, 101910 (2005).
• L. Shterengas, G. Belenky, J.-Y. Yeh, L.J. Mawst, N. Tansu, “Differential gain and linewidth-enhancement factor in dilute-nitride GaAs-based 1.3um diode lasers,” J. Sel. Topics Quantum Electron., 11, 1063 (2005).
• M.Mastrapasqua, S.Luryi, G.L.Belenky, P.A.Garbinski, D.O.Sivco A.Y.Cho, “Multiterminal light emitting logic device electrically reprogrammable between OR and NAND functions" 1992-IEDM, Tech. Digest, pp. 660 (1992).
• G.L.Belenky, S.Luryi, M.Mastrapasqua, P.A.Garbinski, A.Y.Cho, R.A.Hamm, T.R.Hayes, E.J.Laskowski, D.L.Sivco “Top-collector light-emitting charge injection transistors and logic elements," CLEO 1993, Tech. Digest, pp. 376 (1993).
• G.L.Belenky, P.A.Garbinski, P.R.Smith, S.Luryi, A.Y.Cho, R.A.Hamm, D.L.Sivco, “Microwave studies of self-aligned top-collector charge injection transistors," 1993-IEDM, Tech. Digest, pp. 423 (1993).
• G.L.Belenky, A.Kastalsky, S.Luryi, P.A.Garbinski, A.Y.Cho, D.L.Sivco, “Measurement of the effective temperature of majority carriers under injection of hot minority carriers in heterostructures," Proc. Int. Semicond. Device Research Symp. (ISDRS’93), pp. 189, Technical Digest, p. 189 (1993).
• G.L.Belenky, L.Reynolds, R.F.Kazarinov, S.Swamatanian, S.Luryi, J.Lopata “Effect of p-Doping Profile on Performance of Strained Multi-Quantum-Well InGaAWInP lasers. Experiment and Modeling," 15th IEEE Int. Semicond. Laser Conference, Conference Digest pp. 69 (1996), Haifa, Israel.
• M.V. Kisin, M.A. Stroscio, V.B. Gorfinkel, G. Belenky, S. Luryi, “Influence of complex phonon spectrum of heterostructure on gain lineshape in quantum cascade laser," Conference on Lasers and Electro-Optics, 1997 (CLEO’97), pp. 425 (1997).
• D.V. Donetsky, G.L. Belenky, C.L. Reynolds Jr., R.F. Kazarinov, S. Luryi, “Effect of p-doping on carrier leakage and characteristic temperature T0 of 1.3 µm strained InGaAsP/lnP multiple quantum well lasers," Conference on Lasers and Electro-Optics, 1997 (CLEO’97), pp. 157 (1997).
• D.V. Donetsky, C.L. Reynolds, Jr., G.L. Belenky, G.E. Shtengel, R.F. Kazarinov, S. Luryi, “Optimization of p-doping profile of 1.3-µm InGaAsP/InP MQW lasers for high-temperature operation," Conference on Lasers and Electro-Optics, 1998 (CLEO’98), pp. 302 (1998).
• G.L. Belenky, D.V. Donetsky, C.L. Reynolds, Jr., G.E. Shtengel, R.F. Kazarinov, S. Luryi, “1.3µm InGaAsP/InP MQW lasers for high temperature operation. Experiment and modeling," Conference on Lasers and Electro-Optics Europe, 1998 (1998 CLEO/EUROPE), pp. 227 (1998).
• D.V. Donetsky, G.L. Belenky, S. Luryi, D.Z. Garbuzov, H. Lee, R.U. Martinelli, J.C. Connolly, “Current and temperature dependencies of the modal gain in wide aperture 2.3 µm InGaAsSb/AlGaAsSb QW lasers," Conference on Lasers and Electro-Optics, 1999 (CLEO'99), pp.365 (1999).
• M.S. Hybertsen, M.A. Alam, G.A. Baraff, R.K. Smith, G.L Belenky, D.V. Donetsky, G.E. Shtengel, C.L. Reynolds, Jr., R.F. Kazarinov, “Role of doping profile on semiconductor laser performance: simulation and experiment," Conference on Laser and Electro-Optics, 1999 (CLEO'99), pp. 309 (1999).
• M.S. Hybertsen, M.A. Alam, G.A. Baraff, R.K. Smith, G.E. Shtengel, C.L. Reynolds Jr., R.F. Kazarinov, G.L. Belenky, “Microscopic simulation of optical gain in multi-quantum well lasers," Lasers and Electro-Optics Society 1999 (LEOS’99), pp. 657 (1999).
• G.L. Belenky, C.L. Reynolds, Jr., D.V. Donetsky, M.S. Hybertsen, L. Shterengas, G.E. Shtengel, R.F. Kazarinov, “Characterization of heterolasers with different p-doping profile," SPIE Photonics West, Physics and Simulation of Optoelectronic Devices VIII, January (2000), San Jose, CA.
• L. Shterengas, C.L. Reynolds, Jr., G. Belenky, M. Hybertsen, D. Donetsky, G. Shtengel, “Differential gain in 1.3µm InGaAsP/InP MQW lasers with p-doped active region," Conference on Lasers and Electro-Optics, 2000 (CLEO’00), May 2000, pp. 174, May (2000), San Francisco, CA.
• R. Menna, L. Shterengas, W. Trussell, D. Donetsky, M. Maiorov, G. Belenky, J. Connolly, D. Garbuzov, “Effect of p-cladding layer doping on pulsed, high power 1.5-µm InGaAsP MQW lasers," Int. Conference on Indium Phosphide and Related Materials, 2000 (IPRM’00), pp. 274, May (2000), Williamsburg, VA.
• B. Laikhtman, S. Luryi, G. Belenky, “Lateral current injection laser based on type II material system" 25th International Conference on the Physics of Semiconductors, September 17-22, (2000), Osaka, Japan.
• G.L. Belenky, D.Z. Garbuzov, D.V. Donetsky, H. Lee, R.U. Martinelli, J.C. Connolly, “Optical gain and loss 2.3-2.5 µm InGaAsSb/AlGaAsSb QW broad-area and ridge-waveguide lasers," Conference on Lasers and Electro-Optics Europe, 2000 (CLEO/Europe’00), September 10-15, (2000), Nice, France.
• M. Kisin, M.A. Stroscio, G. Belenky, S. Luryi, “Interband tunneling in InAs/GaSb type-II cascade structure," Int. Semicond. Laser Conference, 2000 (ISLC’00), pp. 67, September 25-28, (2000), Monterey, CA.
• D.V. Donetsky, D. Westerfeld, G.L. Belenky, R.U. Martinelli, D.Z. Garbuzov, M. Maiorov, J.C. Connolly, “2.2-2.5µm InGaAsSb/AlGaAsSb QW diode laser with extraordinarily wide (?? = 300 nm) optical gain spectrum,” Conference on Lasers and Electro-Optics, 2001 (CLEO’01), pp. 193, May 6-11 (2001), Baltimore, MD.
• L. Shterengas, G. Belenky, C.L. Reynolds, M.S. Hybertsen, M. Focht, L. Smith, L. Peticolas, D. Stampone, “Effect of the lateral carrier leakage on performance of 1.3 µm InGaAsP MQW CMBH lasers," Conference on Lasers and Electro-Optics, 2001 (CLEO’01), pp. 207, May 6-11 (2001), Baltimore MD.
• M.V. Kisin, M.A.Stroscio, G.Belenky, S.Luryi, “Interband Phonon Assisted Tunneling in InAs-GaSb Heterostructures,” 10th Int. Conference on Phonon Scattering in Condensed Matter, August 12-17 (2001), Dartmouth College, Hanover, NH.
• M.V. Kisin, M.A. Stroscio, G. Belenky, S. Luryi, “Intersubband Phonon Assisted Transitions in type-II InAs-GaSb Heterostructures," 6th Int. Conference on Intersubband Transitions in Quantum Wells, September 10-14 (2001), Asilomar, California.
• L. Shterengas, J.G. Kim, G. Belenky, R. Martinelli, “Progress in type-I In(Al)GaAsSb/GaSb diode lasers with ? > 2.5 µm," Conference on Lasers and Electro-Optics, 2003, (CLEO’03), June 1-6 (2003), Baltimore, MD.
• R.U. Martinelli, J.G. Kim, G.L. Belenky, L. Shterengas, “Design and performance of AlGaAsSb/InGaAsSb/GaSb type-I quantum well diode lasers (invited talk)," Conference on Lasers and Electro-Optics, 2003 (CLEO’03) , June 1-6 (2003), Baltimore, MD.
• R.U. Martinelli, G. Belenky, J.G. Kim, L. Shterengas, “Type-I QW In(Al)GaAsSb/GaSb diode lasers with ? = 2.8 ?m,” Solid State and Diode laser Technology Review (SSDLTR), May 20-22 (2003), Albuquerque, NM.
• G. Belenky, A. Gourevitch, D. Donetsky, D. Westerfeld, C.W. Trussell, H. An, Z. Shellenbarger, R. Martinelli, “High power 1.5 ?m InGaAsP-InP diode laser arrays,” Solid State and Diode laser Technology Review (SSDLTR), pp. 10, May 20-22 (2003), Albuquerque, NM.
• J.G. Kim, L. Shterengas, G. Belenky, R. Martinelli, “High-Power Room-Temperature Continuous Operation of Molecular Beam Epitaxy Grown Type-I In(Al)GaAsSb/GaSb Diode Lasers at ? = 2.7 and 2.8 ?m,” 11th Int. Conference on Narrow Gap Semicond. (NGS-11), June 16-20 (2003), Buffalo, NY.
• G. Belenky, L. Shterengas, “What is the wavelength limit for operation of type-I electrically pumped heterolasers?,” Advanced Research Workshop Future Trends in Microelectronics: The Nano, the Giga, the Ultra, and the Bio, June 23-27 (2003), Corsica, France
• M.V. Kisin, S.D. Suchalkin, J.D. Bruno, G. Belenky, S. Luryi, “Analysis of High-Temperature Continuous Wave Operation of Type-II Interband Cascade Lasers,” 30th Int. Symposium on Compound Semiconductors, August 25-27 (2003), San Diego, CA.
• G.L. Belenky, L. Shterengas, J.G. Kim, R.U. Martinelli, “Recent performance advances in type I GaSb based lasers,” 6th International Conference on Mid-Infrared Optoelectronics Materials and Devices, June 28-July 1 (2004), St. Petersburg, Russia.
• S. Anikeev, D. Donetsky, G. Belenky, S. Luryi, C.A. Wang, D.A. Shiau, M. Dashiell, J. Beausang, G. Nichols, “Static and dynamic measurements of recombination lifetime in narrow-gap GaInAsSb lattice matched to GaSb," 6th International Conference on Mid-Infrared Optoelectronics Materials and Devices (MIOMD) June 28-July 1 (2004), St. Petersburg, Russia.
• L. Shterengas, G.L. Belenky, J.G. Kim, R.U. Martinelli, “Design of High-Power Room-Temperature CW GaSb-based Type-I QW Lasers with ? > 2.5 µm”, 205th Electrochemical Society Meeting, May 9-13 (2004), San Antonio, TX.
• J.G. Kim, R.U. Martinelli, L. Shterengas, G.L. Belenky, “High-power room-temperature continuous operation of type-I In(Al)GaAsSb/GaSb diode lasers at wavelength over 2.5 µm,” SPIE Photonics West, January (2004), San Jose, CA.
• L. Shterengas, J.-Y. Yeh, L.J. Mawst, N. Tansu, G. Belenky, “Linewidth-enhancement factors of InGaAs and InGaAsN single quantum-well diode lasers,” Conference on Lasers and Electro-Optics, 2004 (CLEO’04), May 16-21 (2004), San Francisco, CA.
• A. Gourevitch, D. Donetsky, G. Belenky, B. Laikhtman, D. Westerfeld, Z. Shellenbarger, H. An, R.U. Martinelli, C.W. Trussell, “Transient thermal analysis of 1.47 µm high power diode laser arrays,” Solid State and Diode laser Technology Review (SSDLTR), June (2004), Albuquerque, NM
• G. Belenky, L. Shterengas, A. Gourevitch, D. Donetsky, J. Kim, R. U. Martinelli, D. Westerfeld, Solid State and Diode laser Technology Review (SSDLTR), June (2004), Albuquerque, NM.
• M.V. Kisin, G. Belenky, S. Luriy, “Enhancement of the Phonon Depopulation in Intersubband Cascade Lasers”. Int. Workshop on Quantum Cascade Lasers (QCL), January 4-8 (2004), Seville, Spain.
• S. Anikeev, D. Donetsky, G. Belenky and S. Luryi, C.A. Wang, D.A. Shiau, M. Dashiell, J. Beausang, G. Nichols, “Effects of radiative recombination and photon recycling on minority-carrier lifetime in epitaxial GaInAsSb lattice-matched to GaSb," 12th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE), Lahaina, May 30-June 4 (2004), Lahaina, Maui, HI.
• D. Donetsky, S. Anikeev, N. Gu, G. Belenky, S. Luryi, C.A. Wang, D.A. Shiau, M. Dashiell, J. Beausang, G. Nichols, “Analysis of recombination processes in 0.5-0.6 eV epitaxial GaInAsSb lattice-matched to GaSb", 6th Conference on Thermophotovoltaic Generation of Electricity (TPV6), June 14-16 (2004), Freiburg, Germany.
• C. Wang, R. Huang, M. Connors, D. Shiau, P. Murphy, P. O’Brien, D. Donetsky, S. Anikeev, G. Belenky, D. Depoy, G. Nichols, “Wafer-bonding and epitaxial transfer of GaInAsSb/GaSb to GaAs substrates for monolithic series interconnection of Thermophotovoltaic cells,” 6th Conference on Thermophotovoltaic Generation of Electricity (TPV6), June 14-16 (2004), Freiburg, Germany.
• D. Donetsky, S. Anikeev, G. Belenky, S. Luryi, C.A. Wang, D.A. Shiau, M. Dashiell, J. Beausang, G. Nichols, “Measurements of recombination rates in low-doped epitaxial GaInAsSb lattice-matched to GaSb by frequency response of photoluminescence,” 46th Electronic Materials Conference (EMC), June 20-25 (2004) Notre Dame University, Notre Dame, IN.
• G.L. Belenky, J.G. Kim, L. Shterengas, R.U. Martinelli, “Mid-IR room temperature operated GaSb-based lasers and laser arrays,” 17th Annual Meeting of the IEEE Laser and Electro-Optics Society, 2004 (LEOS’04), November 7-11 (2004), Rio Grande, Puerto Rico.
• G. Belenky, S. Suchalkin, S. Luryi, L. Shterengas, J. Bruno, R. Tober, R.U. Martinelli, J.G. Kim, “2 µm - 5 µm GaSb based emitters for free space communications. Challenges and limitations,” SPIE International Symposium “Information Technology and Communication”, October 25-28 (2004), Philadelphia, PA.
• S. Suchalkin, M.V. Kisin, G. Belenky, S. Luryi, Y. Vasilyev, J. Bruno, F. Towner, R. Tober, “Electrically Tunable Cascaded mid-IR Type II Light Source", SPIE Photonics West, January 21 (2004), San Jose, CA.
• M.V. Kisin, G. Belenky, S. Luriy, “Enhancement of the phonon depopulation in intersubband cascade lasers,” Int. Workshop on Quantum Cascade Lasers (QCL), January 4-8 (2004), Seville, Spain.
• M.V. Kisin, S. Suchalkin, G. Belenky, “Stark effect tunable QCL,” 8th International Conference on Intersubband Transitions in Quantum Wells (ITQW’05), September 11-16 (2005), North Falmouth, MA.
• L. Shterengas, G. Belenky, J.G. Kim, A. Gourevitch, D. Donetsky, D. Westerfeld, R. Martinelli, “Effect of compressive strain on differential gain of GaSb-based type-I QW lasers,” Conference on Lasers and Electro-Optics, 2006 (CLEO’06), May 21-26 (2006) Long Beach, CA.
• L. Shterengas, A. Ongstad, R. Kaspi, S. Suchalkin, G. Belenky, M. Kisin, D. Donetsky, “Carrier Capture in InGaAsSb/InAs/InGaSb Type-II QW Laser Heterostructures,” Conference on Lasers and Electro-Optics, 2006 (CLEO’06), May 21-26 (2006) Long Beach, CA.
• J.G. Kim, H. An, L. Shterengas, R.U. Martinelli, G.L. Belenky, “Development of high-power room-temperature continuous wave operation of 2.0-2.8 µm type-I In(Al)GaAsSb/GaSb diode lasers,” 2nd Symposium on Infrared Materials and Technologies, November 21-22 (2005), The Penn State Conference Center Hotel, State College, PA.
• L. Shterengas, A. Ongstad, R. Kaspi, S. Suchalkin, G. Belenky, M. Kisin, D. Donetsky, “Carrier Capture in InGaAsSb/InAs/InGaSb Type-II QW Laser Heterostructures,” Conference on Lasers and Electro-Optics, 2006 (CLEO’06), May 21-26 (2006), Long Beach, CA.
• D. Donetsky, L. Shterengas, G. Kim, G. Belenky, A. Gourevitch, D. Westerfeld, R. Martinelli, “Carrier Recombination Kinetics in 2.3-2.4 µm InGaAsSb/AlGaAsSb QW Laser Heterostructures,” 48th Electronic Materials Conference (EMC), June 28-30 (2006) Pennsylvania State University, State College, PA.
• L. Shterengas, A. Ongstad, R. Kaspi, S. Suchalkin, G. Belenky, M. Kisin, D. Donetsky, “Electron and Hole Energy Relaxation in InGaAsSb/InAs/InGaSb Type-II QW Laser Heterostructures”, 48th Electronic Materials Conference (EMC), June 28-30 (2006) Pennsylvania State University, State College, PA.
• M. V. Kisin, L. Shterengas, J.G. Kim, G. Belenky, “Enhancement of Optical Gain in Sb-based MIR Diode Lasers”, IEEE 21st Int. Semiconductor Laser Conference (ISLC), September 18-21 (2006), Kohala Coast, HI.
• J. G. Kim, H. An, L. Shterengas, R.U. Martinelli, G.L. Belenky, “Development of high-power room-temperature continuous wave operation of 2.0-2.8um type-I In(Al)GaAsSb/GaSb diode lasers,” 2nd Symposium on Infrared Materials and Technologies, November 21-22 (2005), The Penn State Conference Center Hotel, State College, PA.
• S.D. Suchalkin, M.V. Kisin, S. Luryi, G. Belenky, J. Bruno, F.J. Towner, C. Monroy, R. Tober, “Electrically Tunable Interband Cascade Laser (invited paper),” SPIE Optics East, October 1-4 (2006), Boston, MA.
• S.D. Suchalkin, M.V. Kisin, S. Luryi, G. Belenky, J. Bruno, F.J. Towner, , R. Tober, “Widely tunable type II interband cascade laser," Advanced Research Workshop Future Trends in Microelectronics: Up the Nano Creek, June 26-30 (2006), Crete, Greece.
• M.V. Kisin, S.D. Suchalkin, S. Luryi, G. Belenky, J. Bruno, F.J. Towner, R. Tober, “Electrically Tunable Cascade Laser,” 2nd International Workshop on Quantum Cascade Lasers (QCL), September 6-9 (2006), Brindizi, Italy.
• L. Shterengas, G. Belenky, M.V. Kisin, D. Donetsky, D. Westerfeld, “High power 2.4 µm Type-I QW GaSb-based diode lasers with enhanced differential gain,” 7th International Conference on Mid-Infrared Optoelectronics Materials and Devices (MIOMD), May (2007), Bad Ischl, Austria.
• L. Shterengas, G. Belenky, M. Kisin, D. Donetsky, D. Westerfeld, “Recent developments in high power 2.3-2.4 µm diode lasers”, SPIE Defense and Security Symposium, April (2007), Orlando, FL.
• G. Belenky, L. Shterengas, D. Donetsky, M.V. Kisin, “Advances in Mid-Infrared GaSb-based Lasers,” 1st International Conference on Materials and Information Sciences in High Technologies (MISHE’07), September. 26-29 (2007), Baku, Azerbaijan.
• L.E. Vorobjev, V.L. Zerova, D.A. Firsov, V.A. Shalygin, M.Ya. Vinnichenko, V.Yu. Panevin, T. Paphavy, K.S. Borchev, A.E. Zhukov, Z.N. Sokolova, I.S. Tarasov, G. Belenky, “Electroluminescence of hot carriers in laser nanostructures under spontaneous - and stimulated - emission conditions and absorption of IR-radiation by hot electrons in quantum wells,” XII International Symposium on Nanophotonics and Nanoelectronics, pp. 173 (in Russian) March 10-14 (2008), Nizny Novgorod, Russia.
• S. Suchalkin, D. Westerfeld, S. Jung, G. Kipshidze, L. Shterengas, T. Hosoda, G. Belenky, “Room temperature operated GaSb-based type I light-emitting diodes,” SPIE Defence and Security, March 17-18 (2008), Orlando, FL.
• L.Shterengas, G. Kipshidze, T. Hosoda, D. Donetsky, G. Belenky, “Room Temperature Operated 3.1-µm type-I GaSb-based diode lasers with 80 mW continuous wave output power,” Conference on Lasers and Electro-Optics, 2008 (CLEO’08), May 4-9 (2008) San Jose, CA.
• G. Belenky, G. Kipshidze, L. Shterengas, D. Donetsky, T. Hosoda, J. Chen, S. Suchalkin, “GaSb based lasers operating within spectral range above 2 µm,” SPIE Photonics West, January 24-29 (2009), San Jose, CA.
• G. Belenky, L. Shterengas, G. Kipshidze, T. Hosoda, J. Chen, S. Suchalkin, “GaSb-based Laser diodes operating within spectral range of 2-3.5 µm,” Conference on Lasers and Electro-Optics, 2009 (CLEO’09), May 31-June 5 (2009), Baltimore, MD.
• J. Chen, G. Kipshidze, L. Shterengas, T. Hosoda, Y. Wang, D. Donetsky, G. Belenky, “2.7 µm GaSb Based Diode Lasers With Quinary Waveguide,” 51st Electronic Materials Conference (EMC), June 24-26 (2009), University Park, PA
• T. Hosoda, G. Kipshidze, L. Shterengas, D. Westerfeld, S. Suchalkin, G. Belenky, “3 µm Type-I GaSb-based diode lasers operating at room temperature in CW mode,” 26th North American Molecular Beam Epitaxy Conference (NAMBE), August 9-12 (2009), Princeton, NJ.
• G. Belenky, G. Kipshidze, T. Hosoda, J. Chen, D. Wang, L. Shterengas, “GaSb-based laser operating within the spectra range of 2-3 µm,” Advanced Workshop on Frontiers in Electronics (WOFE 09), December 13-16 (2009), Rincon, Puerto Rico.
• A. Soibel, C. Frez, A. Ksendzov, Y. Qiu, S. Forouhar, J. Chen, T. Hosoda, G. Kipshidze, L. Shterengas, G. Tsvid, G. Belenky, “3.0-3.5µm single spatial mode diode lasers operating at room temperature,” Conference on Lasers and Electro Optics, 2010 (CLEO 2010), May 16-21 (2010), San Jose, CA.
• T. Hosoda, J. Chen, G. Tsvid, G. Kipshidze, S. Suchalkin, L. Shterengas and G. Belenky, “Diode Lasers Operating at Room Temperature in 2-3.5 µm Spectral Region”, SPIE Defense, Security and Sensing, April 5-9 (2010), Orlando, FL.
• S. Svensson, D. Donetsky, D. Wang, P. Maloney, G. Belenky, “Carrier Lifetime Measurement in InAs/GaSb Strained Layer Superlattice Structures,” SPIE Defense Security and Sensing, April 5-9 (2010), Orlando, FL.
• L. Shterengas, G. Kipshidze, T. Hosoda, G. Tsvid, G. Belenky, “Diode Lasers Emitting above 3 µm at Room Temperature with more than 100 mW of Continuous Wave Output Power,” SPIE Photonics West, January 23-28 (2010), San Fransisco, CA.
• S. Jung, S. Suchalkin, G. Kipshidze, G. Belenky, “GaSb Based Mid-Infrared Type I Quantum Well Dual Wavelength LEDs and LED Arrays,” MIRTHE-IROn-SensorCAT Virtual Conference, January 19-20 (2011).
• G. Tsvid, A. Soibel, T. Hosoda, J. Chen, G. Kipshidze, L. Shterengas, C. F. Frez, S. Forouhar, G. Belenky, “Type-I GaSb based diode single lateral mode lasers operating at room temperature in 3.1-3.2 µm spectral region," SPIE Photonics West, January 22-27 (2011), San Francisco, CA.
• G. Belenky, L. Shterengas, G. Kipshidze, T. Hosoda, J. Chen, “Advances in the development of type-I quantum well GaSb-based diode lasers," SPIE Photonics West, January 22-27 (2011), San Francisco, CA.
• S. Forouhar, C. Frez, A. Ksendzov, Y. Qiu, K. J. Franz, A. Soibel, J. Chen, T. Hosoda, G. Kipshidze, L. Shterengas, G. Belenky, “Low power consumption lasers for next generation miniature optical spectrometers for trace gas analysis," SPIE Photonics West, January 22-27 (2011), San Francisco, CA.
• G. Belenky, G. Kipshidze, S. Svensson, W. Sarney, H. Heir, L. Shterengas, D. Donetsky, D. Wang, Y. Lin, “Carrier Recombination in GaSb/InAs SLS and InAsSb,” SPIE Defense, Security and Sensing, April 25-29 (2011), Orlando, FL.
• D. Wang, S. Svensson, L. Shterengas, G. Belenky, “Band Edge Optical Transitions in Bulk GaSbN and InAsN Dilute-Nitride Materials,” 53rd Electronic Materials Conference (EMC), June 22-24 (2011), Santa Barbara, CA.
• D. Wang, D. Donetsky, S. Svensson, S. Suchalkin, G. Kipshidze, G. Belenky, A. Liu, J. Fastenau, D. Lubyshev, “Study of Carrier Lifetime and Background Carrier Concentration in GaSb/InAs Strained-Layer Superlattices and Bulk Epitaxial Layers by Optical Modulation Response,” 53rd Electronic Materials Conference (EMC), June 22-24 (2011), Santa Barbara, CA.
• S. Jung, S. Suchalkin, G. Kipshidze, L. Shterengas, G. Belenky, “Wet Etching Technique for Fabrication of GaSb Based Mid Infrared Single Lateral Mode Lasers,” 53rd Electronic Materials Conference (EMC), June 22-24 (2011), Santa Barbara, CA.
