; scmos1_2um.rpm ; HP CMOS 34 ; configuration file for scmos with lamba = 0.6(1.2um process) ; parameters extracted from spice SPICE level 3 models for use with ; ext2sim. ; capga .001725 ; gate capacitance -- area, pf/sq-micron ; calculated with Tox (gate oxide thickness) = 200 A lambda 0.6 ; microns/lambda lowthresh 0.4 ; logic low threshold as a normalized voltage highthresh 0.6 ; logic high threshold as a normalized voltage cntpullup 0 ; irrelevant, cmos technology; no depletion transistors diffperim 0 ; don't include diffusion perimeters for sidewall cap. subparea 0 ; poly over transistor won't count as part pf bulk-poly cap. diffext 0 ; diffusion extension for each transistor ; channel resistance for both N-type nad P-type MOS transistors ; ; These are generated form MOSIS's HP34 run N21I with SPICE ; level 3 model and Berkeley's SPice3e2 and the getres script ; in irsim's distribution.... ; resistance n-channel dynamic-high 3.6 1.2 3382.0 resistance n-channel dynamic-low 3.6 1.2 2346.0 resistance n-channel static 3.6 1.2 2599.0 resistance p-channel dynamic-high 7.2 1.2 3272.0 resistance p-channel dynamic-low 7.2 1.2 7171.0 resistance p-channel static 7.2 1.2 3878.0 ; resistance n-channel dynamic-high 6.0 1.2 1912.0 resistance n-channel dynamic-low 6.0 1.2 1440.0 resistance n-channel static 6.0 1.2 1514.0 resistance p-channel dynamic-high 12.0 1.2 2004.0 resistance p-channel dynamic-low 12.0 1.2 4281.0 resistance p-channel static 12.0 1.2 2233.0 ; resistance n-channel dynamic-high 12.0 1.2 898.0 resistance n-channel dynamic-low 12.0 1.2 773.0 resistance n-channel static 12.0 1.2 704.0 resistance p-channel dynamic-high 24.0 1.2 1071.0 resistance p-channel dynamic-low 24.0 1.2 2159.0 resistance p-channel static 24.0 1.2 1006.0 ; resistance n-channel dynamic-high 60.0 1.2 173.0 resistance n-channel dynamic-low 60.0 1.2 249.0 resistance n-channel static 60.0 1.2 98.0 resistance p-channel dynamic-high 120.0 1.2 347.0 resistance p-channel dynamic-low 120.0 1.2 491.0 resistance p-channel static 120.0 1.2 64.0