;
; configuration file for scmos with lamba = 0.35 (0.6um process + 1um)
; 
;  The results have been extracted with TM at 3.3
;  The bsim models by hp have been used

lambda  0.12    ; 

capga   .0021 ; gate capacitance        -- area, pf/sq-micron

capda 0.000140
capdp 0.000150
cappda 0.000470
cappdp 0.000135

lowthresh  0.3  ; logic low threshold as a normalized voltage
highthresh 0.5  ; logic high threshold as a normalized voltage

cntpullup 0     ; irrelevant, cmos technology; no depletion transistors
diffperim 0     ; don't include diffusion perimeters for sidewall cap.
subparea 0      ; poly over transistor won't count as part pf bulk-poly cap.
diffext  0      ; diffusion extension for each transistor

;0.6um channel

resistance n-channel dynamic-low   1.5   0.3   1623.10
resistance p-channel dynamic-high   5.55   0.3   1276.00
resistance n-channel static   1.5   0.3   2020.45
resistance p-channel static   5.55   0.3   1654.71
resistance n-channel dynamic-high   1.5   0.3   3561.30
resistance p-channel dynamic-low   5.55   0.3   3875.80