Paper 121 Abstract

Invited talk at SPIE's International Symposium on Optoelectronics for Information and Microwave Systems: Diode Laser Technology.
Los Angeles, CA, Jan 22-29, 1994
Tech Conf 2146: Physics and Simulation of Optoelectronic Devices II
Tuesday, Jan 25 [2146-25]

Dual Modulation of Semiconductor Lasers

Vera B. Gorfinkel, University of Kassel, Germany
Serge Luryi, AT&T Bell Laboratories, Murray Hill

We discuss a new method for modulating output radiation of semiconductor lasers. The key idea is to control the laser with an additional high-frequency input signal, varied simultaneously with the pumping current. The additional signal can be any one of the several physical parameters influencing the optical wave in a laser cavity, such as the gain, the confinement factor, the photon lifetime, the wavelength, etc. Although controlling such parameters may not be as technologically straightforward and natural as modulating the pumping current, we shall argue that it is

(a) feasible,
(b) certainly worth the trouble, and
(c) may even be indispensable for certain important goals in optical communications.

We shall demonstrate that dual modulation allows to maintain a linear relationship between the input current and the output optical power in a wide band of modulation frequencies. Moreover, we show that dual modulation allows to eliminate relaxation oscillations, enhance the modulation frequency, and achieve pure AM or pure FM modulation regimes of the laser output radiation. Concrete schemes for accomplishing dual modulation will be discussed, based on either modulating the effective carrier temperature in the active region or electrooptically controlling the confinement factor.

Full Paper: V. B. Gorfinkel and S. Luryi, "Dual modulation of semiconductor lasers", in Physics and Simulation of Optoelectronic Devices II, ed. by M. Osinski, Proc. SPIE 2146, pp. 204-209 (1994);

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