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a_511558 Effect of p-doping profile on performance of strained multi-quantum-well InGaAsP-InP lasers
- Belenky, G.L.; Reynolds, C.L., Jr.; Kazarinov, R.F.; Swaminathan, V.; Luryi, S.L.; Lopata, J.
State Univ. of New York, Stony Brook, NY, USA
This paper appears in: Quantum Electronics, IEEE Journal of
On page(s): 1450 - 1455
Aug. 1996
Volume: 32 Issue: 8
ISSN: 0018-9197
References Cited: 10
INSPEC Accession Number: 5354863
Leakage of electrons from the active region of InGaAsP-InP laser heterostructures with different profiles of acceptor doping was measured by a purely electrical technique together with the device threshold current. Comparison of the obtained results with modeling data and SIMS analysis shows that carrier leakage of electrons over the heterobarrier depends strongly on the profile of p-doping and level of injection. In the case of a structure with an undoped p-cladding/waveguide interface, the value of electron leakage current can reach 20% of the total pumping current at an injection current density of 10 kA/cm at 50/spl deg/C. It is shown that carrier leakage in InGaAsP-InP multi-quantum-well lasers can be minimized and the device performance improved by utilizing a p-doped separate-confinement-heterostructure layer.
Index Terms:
quantum well lasers; indium compounds; gallium arsenide; III-V semiconductors; semiconductor doping; leakage currents; current density; doping profiles; secondary ion mass spectra; p-doping profile; performance; strained multi-quantum-well InGaAsP-InP lasers; electron leakage; active region; InGaAsP-InP laser heterostructures; acceptor doping; electrical technique; device threshold current; modeling data; SIMS analysis; carrier leakage; heterobarrier; p-doping; injection level; undoped p-cladding/waveguide interface; electron leakage current; total pumping current; injection current density; device performance; p-doped separate-confinement-heterostructure layer; 50 degC; InGaAsP-InP

Reference list:

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2. G. P. Agrawal, N. K. Dutta, "Long-Wavelength Semiconductor Lasers", Van Nostrand Reinhold, New York, 1986.

3. L. C. Chiu, K. L. Yu, S. Margalit, T. R. Chen, U. Koren, A. Hasson, A. Yariv, "Field and hot carrier enhanced leakage in InGaAsP/InP heterojunctions", IEEE J. Quantum Electron., vol.QE-19, pp.1335-1983.

4. R. F. Kazarinov, M. R. Pinto, "Carrier transport in laser heterostructures", IEEE J. Quantum Electron., vol.30, pp.49-1994.
[Abstract]  [PDF Full-Text (368KB)]

5. G. L. Belenky, R. F. Kazarinov, J. Lopata, S. Luryi, T. Tanbun-Ek, P. Garbinski, "Direct measurement of the carrier leakage out of the active region in InGaAsP/InP laser heterostucture", IEEE Trans. Electron Devices, vol.42, pp.215-1995.
[Abstract]  [PDF Full-Text (336KB)]

6. T. R. Chen, S. Margalit, U. Koren, K. L. Yu, L. Chiu, A. Hasson, A. Yariv, "Direct observation of the carrier leakage in InGaAsP/InP laser", Appl. Phys. Lett., vol.42, pp.1000-1983.

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9. V. D. Pishchalko, V. I. Tolstikhin, "Carrier heating effects in InGaAsP/InP heterostructures", Sov. Phys.—Semicond., vol.24, pp.228-1990.

10. K. D. Chik, "A theoretical analysis of Auger recombination induced energetic carrier leakage in InGaAsP/InP double heteroinjection lasers and light emitting diodes", J. Appl. Phys., vol.63, pp.468-1988.

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