Paper 206, Book chapter
Semiconductor
Nanostructures for Optoelectronic Applications
Todd Steiner, Editor, Artech House, Inc., Boston (2004) pp.
113-158.
Quantum Dot Lasers: Theoretical Overview
Levon Asryan and Serge Luryi
Department of Electrical Engineering
State University of New York at Stony Brook
Stony Brook, NY 11794-2350
Content:
1. Introduction: dimensionality and laser performance
2. Advantages of an idealized QD laser
3. Progress in fabricating QD lasers
4. State-of-the-art complications
4.1. Nonuniformity of QDs
4.2. Parasitic recombination outside QDs
4.3. Violation of local neutrality in QDs
4.4. Excited states
4.5. Spatial discreteness of active
elements: hole burning
4.6. Intrinsic nonlinearity of the
light-current characteristic
4.7. Critical sensitivity to
structure-parameters
4.8. Dependence of the maximum gain on the
QD shape
5. Novel designs of QD lasers with improved threshold and power
characteristics
6. Other perspectives
References
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