Paper 206, Book chapter

Semiconductor Nanostructures for Optoelectronic Applications
Todd Steiner, Editor, Artech House, Inc., Boston (2004)  pp. 113-158.

Quantum Dot  Lasers: Theoretical Overview

Levon Asryan and Serge Luryi
Department of Electrical Engineering
State University of New York at Stony Brook
Stony Brook, NY 11794-2350


1. Introduction: dimensionality and laser performance

2. Advantages of an idealized QD laser
3. Progress in fabricating QD lasers
4. State-of-the-art complications
     4.1. Nonuniformity of QDs
     4.2. Parasitic recombination outside QDs
     4.3. Violation of local neutrality in QDs
     4.4. Excited states
     4.5. Spatial discreteness of active elements: hole burning
     4.6. Intrinsic nonlinearity of the light-current characteristic
     4.7. Critical sensitivity to structure-parameters
     4.8. Dependence of the maximum gain on the QD shape
5. Novel designs of QD lasers with improved threshold and power characteristics
6. Other perspectives

Download pdf (8 Mb)

Return to the [Publication Record] home page

Return to the [Serge Luryi's] home page

Return to the [Faculty] Home Page

Return to the [EE Department] home page

Serge Luryi,, +1.631.632.8420; Fax: +1.631.632.8494