PolySilicon Gates, MOS properties

Studies of MOS transistor structures with polysilicon gates (1982-93).

Principal collaborator: Nadia Lifshitz Nadia's image (1997)

We carried out several experimental and theoretical investigations of this technologically important system. Identified a quantum-size effect in small-grain polySi gates as the origin of a shift of transistor threshold by as much as 100 mV. Invented the active gate transistor, US Patent 5,550,397, a device potentially important for SRAM applications and large-area electronics.

Key papers: 17, 66, 117

Where the numbers refer to the attached list of Publications

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Serge Luryi, Serge.Luryi@sunysb.edu, +1.516.632.8420; Fax: +1.516.632.8494