Studies of MOS transistor structures with polysilicon gates (1982-93).
Principal collaborator: Nadia Lifshitz Nadia's image (1997)
We carried out several experimental and theoretical investigations of this technologically important system. Identified a quantum-size effect in small-grain polySi gates as the origin of a shift of transistor threshold by as much as 100 mV. Invented the active gate transistor, US Patent 5,550,397, a device potentially important for SRAM applications and large-area electronics.
Key papers: 17, 66, 117
Where the numbers refer to the attached list of Publications
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