Heteroepitaxial infrared detectors

Invention and experimental demonstration of novel infrared photodetectors for fiber-optical communications; Si heteroepitaxy (1984-86).

Principal collaborator: Alex Kastalsky

These detectors were implemented on a Si chip - compatible with VLSI circuits and yet suitable for long wavelength detection. The ingredient ideas were based on the physics of strained-layer GeSi/Si systems grown by MBE. In connection with this work I made several contributions to heteroepitaxy of lattice-mismatched materials. The most significant of my patents in this area proposes epitaxial growth on laterally patterned substrates as a method of relieving stress and reducing the formation of misfit dislocations. This idea has found wide application. As a result of my involvement with on-chip detectors, I became an early proponent of heteroepitaxy on Si substrates, as one of the most important future directions in microelectronics.

Key papers: 29, 31, 44-46, 49, 61

Where the numbers refer to the attached list of Publications

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Serge Luryi, Serge.Luryi@sunysb.edu, +1.516.632.8420; Fax: +1.516.632.8494