Induced-Base and Quantum Capacitance Transistors

Invention and experimental realization of the induced-base and quantum-capacitance transistors (1985-88).

These are exploratory quantum-well devices, whose potential has not yet been fully realized. The IBT (US Pat. 4,691,215) is a hot-electron device based on ballistic electron injection across a quantum well base. The base conductivity is due to the 2D metal, induced by the collector field. The idea of quantum capacitance (QC) is based on the incomplete screening of normal electric field by a degenerate 2D electron gas. This permits the control of injection by a gate electrode separated from the emitter by a quantum-well collector (US Pat. 4,860,064). The QC concept has had a wide use in device physics, transcending in importance its intended application.

Key papers: 34, 52, 63, 64

Where the numbers refer to the attached list of Publications

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Serge Luryi,, +1.516.632.8420; Fax: +1.516.632.8494