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United States Patent | 4,769,341 |
Luryi | September 6, 1988 |
A semiconductor device comprising an epitaxially grown tin and Group IV compound semiconductor region on which at least one other semiconductor is grown lattice matched to the adjacent portion of the tin containing region. A large number of semiconductors may thus be grown.
Inventors: | Luryi; Sergey (Passaic Township, Morris County, NJ) |
Assignee: | American Telephone and Telegraph Company, AT&T Bell Laboratories (Murray Hill, NJ) |
Appl. No.: | 947051 |
Filed: | December 29, 1986 |
Current U.S. Class: | 117/105; 117/108; 117/939; 148/DIG72; 148/DIG97; 148/DIG160; 148/DIG169; 257/190; 438/933; 438/936 |
Intern'l Class: | H01L 021/203; H01L 021/20 |
Field of Search: | 437/103,106,104,936,905,102 156/610-614 148/DIG. 48,169,160,67 357/16 |
3626257 | Dec., 1971 | Esaki | 148/DIG. |
3626328 | Dec., 1971 | Esaki | 148/DIG. |
4088515 | May., 1978 | Blakeslee et al. | 357/16. |
4120706 | Oct., 1978 | Mason | 437/104. |
4159214 | Jun., 1979 | Mason | 437/104. |
4180825 | Dec., 1979 | Mason | 357/16. |
4378259 | Mar., 1983 | Hasegawa et al. | 437/905. |
4529455 | Jul., 1985 | Bean et al. | 437/106. |
4630083 | Dec., 1986 | Yamakoshi | 357/16. |
4675708 | Jun., 1987 | Onabe | 357/16. |
Bean et al., "Pseudomorphic Growth of Ge.sub.x Si.sub.1-x on Silicon by Molecular Beam Epitaxy", Appl. Phys. Lett., 44(1), Jan. 1, 1984, pp. 102-104. Bean, "Recent Developments in the Strained Layer Epitaxy of Germanium-Silicon Alloys", J. Vac. Sci. Technol. B 4(6), Nov./Dec. 1986, pp. 1427-1429. Parker, The Technology & Physics of Molecular Beam Epitaxy, Plenum Publishing, New York, NY, Sep. 1985, pp. 179-181 & 667-669. |