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United States Patent | 5,323,053 |
Luryi ,   et al. | June 21, 1994 |
In accordance with the present invention, a silicon device fabricated on a (100) silicon substrate is provided with a (111) slant surface and an electrical contact comprising epitaxial low Schottky barrier silicide is formed on the (111) surface. For example, low resistance rare earth silicide contacts on V-groove surfaces are provided for the source and drain contacts of a field effect transistor. The resulting high quality contact permits downward scaling of the source and drain junction depths. As another example, rare earth silicide Schottky contacts are epitaxially grown on V-groove surfaces to provide low voltage rectifiers having both low power dissipation under forward bias and low reverse-bias leakage current.
Inventors: | Luryi; Sergey (Bridgewater, NJ); Miller; Gabriel L. (Westfield, NJ) |
Assignee: | AT&T Bell Laboratories (Murray Hill, NJ) |
Appl. No.: | 089392 |
Filed: | July 9, 1993 |
Current U.S. Class: | 257/485; 257/486; 257/621; 257/622; 257/627; 257/754 |
Intern'l Class: | H01L 029/48 |
Field of Search: | 357/15,23.6 G 257/485,486,621,622,627,754 |
5040034 | Aug., 1991 | Murakami et al. | 357/15. |
Mok et al-IEEE Transactions on Electron Devices vol. ED-25, No. 10, Oct. 1978. M. Gurvitch, et al. "Preparation & Chararacterization of Epitaxial Yttrium Silicide on (111) Silicon", Mat. Res. Soc. Symp. Proc., vol. 91 (1987) pp. 457-465. K N. Tu, et al. "Low Schottky barrier of rare-earth silicide on n-Si", Appl. Phys. Lett. 38, pp. 626-628 (1981). H. Norde, et al. "The Schottky-barrier height of the contacts between some rare-earth metals (and silicides) and p-type silicon", Appl. Phys. Lett 38, pp. 865-867 (1981). |