Department of Electrical and Computer Engineering

Gregory Belenky

Distinguished Professor

209 Light Engineering Building, Stony Brook University
Stony Brook, New York 11794-2350

Email: gregory.belenky@stonybrook.edu
Phone: (631) 632-8397
Fax: (631) 632-8394

Research Interest

Design, manufacturing and characterization of optoelectronic and microelectronic semiconductor devices. Lasers for telecommunications. Physics of semiconductors and semiconductor devices.

Teaching

•  ESE211
•  ESE519

Summary of Selected Technical Contributions

Novel design of semiconductor devices (1995-2013)

New technique of characterization of semiconductor lasers (1995-1999)

Design of a novel heterodevice (1992-1993)

Observation of the Quantum Hall Effect in bulk semiconductors (1986-1989)

Discovery of High Temperature electron-hole liquid in anisotropic semiconductors (1985-1988)

First observation of membrane effect in solids; explanation of negative thermal expansion of graphite (1982-1984)

Studies of electronic and phonon spectra of anisotropic semiconductors (1976-1982)

Publications

Over 200 publications in scientific technical journals, five reviews, four US patents

Reviews and Book Chapters

  1. "Electronic and vibrational spectra of III -VI layered semiconductors" (with V.Stopachinski) Sov. Phys. Usp., 26, 497-529, 1983

  2. "Deformation effects in layer crystals" (with E.Salaev and R.Suleimanov) Sov. Phys. Usp., 31, 433-455, 1988

  3. "Advances in measurement of physical parameters of semiconductor lasers" (with G.Shtengel, M.Hybertsen, R.Kazarinov and D.Ackerman) J. High Speed Electron. and Syst., 9, 901-940,1999

  4. "Mid-infrared GaSb-based lasers with type-I heterointerfaces" (with D. V. Donetsky and R. U. Martinelli) International Journal of High Speed Electronics and Systems, 12, No. 4, pp. 87-100, 2002

  5. “GaSb-based type-I quantum well diode lasers” (with L. Shterengas, M. Kisin, T. Hosoda,) in “Semiconductor lasers - fundamentals and applications”, Woodhead Publishing, to be published in (2011).

Journal Publications

  1. G.L.Belenkii, E.B.Ermolovich, N.B.Lukyanchikova, “Determination of the radiative yield of the electron capture in CdSe,” Sov. Phys. Solid State, 9, 2626 (1968).

  2. M.K.Sheinkman, I.B.Ermolovich, G.L.Belenkii, “Nature of infrared luminescence in CdSe,” Sov. Phys. Solid State, 10, 1394 (1968).

  3. G.L.Belenkii, A.K.Lubchenko, M.K.Sheinkman, “Investigation of 0.93 µm luminescence of CdSe and its relationship to the photoconductivity,” Sov. Phys. Semicond., 2, 445 (1968).

  4. G.L.Belenkii, N.V.Gavrilenko, I.Ya.Gorodetskii, “Recombination processes in grain-oriented CdSe thin films,” Ukr. Fiz. Zh., 13, 1127 (1969).

  5. M.K.Sheinkman, V.A.Tygai, G.L.Belenkii, “Investigation of the nature of the sensitization of CdSe crystals,” Ukr. Fiz. Zh., 13, 1037 (1969).

  6. M.K.Sheinkman, I.B.Ermolovich, G.L.Belenkii, “Mechanisms of orange, red and infrared luminescence in CdS,” Sov. Phys. Solid State, 10, 2069 (1969).

  7. G.L.Belenkii, M.K.Sheinkman, “Mechanism of 0.82µm luminescence in CdS,” Sov. Phys. Semicond., 2, 1280 (1969).

  8. M.K.Sheinkman, G.L.Belenkii, “Radiative recombination in inactivated ZnSe single crystals,” Sov. Phys. Semicond., 2, 1360 (1969).

  9. G.B.Abdullaev, M.Kh.Alieva, G.L.Belenkii, “On sensitizing recombination centers in GaSe single crystals,” Phys. Stat. Solidi, 37, 571 (1970).

  10. G.B.Abdullaev, M.Kh.Alieva, G.L.Belenkii, N.M.Krolevets, “Infrared luminescence of doped single crystals of GaSe,” Ukr. Fiz. Zh., 16, 1806 (1971).

  11. G.B.Abdullaev, G.L.Belenkii, S.H.Ryvkin, V.M.Salmanov, “Photoconductivity of GaSe excited by ruby laser radiation,” Sov. Phys. Semicond., 5, 328 (1971).

  12. G.A.Akhmedov, A.A.Agaeva, G.L.Belenkii, “The influence of electric field on photoconductivity of GaSe induced by laser radiation,” Izv. Acad. Nauk Azerb. SSR, 2, 142, (1972).

  13. G.A.Akhmedov, G.L.Belenkii, F.N.Kaziev, V.M.Salmanov, “Investigation of the fast recombination channel in InSe under excitation by neodynium laser light,” Sov. Physica, 15, 1036 (1973).

  14. G.B.Abdullaev, G.L.Belenkii, V.S.Larionkina, R.Kh.Nani, “Optical memory effects in CdIn2S4,” Sov. Phys. Semicond., 7, 561 (1974).

  15. G.B.Abdullaev, G.L.Belenkii, V.Kh.Khalilov, “Fine structure of ground state of excitons in GaSe,” Sov. Phys. Semicond., 7, 559 (1974).

  16. G.B.Abdullaev, G.L.Belenkii, E.Yu.Salaev, R.A.Suleimanov, “Studies of edge luminescence of GaSe,” Sov. Phys. Solid State, 16, 11 (1974).

  17. G.L.Belenkii, T.G.Dilbazov, I.K.Neimanzade, “Photoconductivity of GaSe at low temperature,” Izv. Akad. Nauk Azerb. SSR, 4, 47 (1975).

  18. G.L.Belenkii, L.S.Larionkina, I.V.Markovich, R.Kh.Nani, “Peculiarities of long time relaxation of photoconductivity CdIn2S4,” Izv. Acad. Nauk Azerb. SSR, 4, 61 (1975).

  19. S.G.Abdullaeva, G.L.Belenkii, R.A.Suleimanov, “Excitons in solutions GaSxSe1-x,” Sov. Phys. Semicond., 9, 108 (1975).

  20. S.S.Ishenko, G.B.Abdullaev, G.L.Belenkii, V.Okulov, E.Yu.Salaev, “ESR of Mn++ in single-crystal GaSe,” Sov. Phys. Solid State, 17, 1168 (1975).

  21. G.B.Abdullaev, G.L.Belenkii, M.Tagiev, E.Yu.Salaev, “Two-mode nature of phonon reflections spectra of GaSxSe1-x,” Sov. Phys. Semicond., 9, 1313 (1975).

  22. G.L.Belenkii, R.Kh.Nani, E.Yu.Salaev, R.A.Suleimanov, “Edge luminescence and light absorption in GaSxSe1-x solid solution at low temperatures,” Phys. Status Sol.(a), 31, 707 (1975).

  23. G.L.Belenkii, T.G.Dilbazov, R.Kh.Nani, E.Yu.Salaev, “Edge luminescence of GaSe and GaS caused by impurities,” Ukr. Fiz. Zh., 21, 328 (1976).

  24. G.L.Belenkii, “Characteristic features of exciton absorption spectra of GaSe at 4.2K,” Sov. Phys. Semicond., 10, 717 (1976).

  25. G.B.Abdullaev, G.L.Belenkii, E.Yu.Salaev, “Interlayer interaction and exciton spectrum of GaSe,” IL Nuovo Cimento, 388, 469 (1977).

  26. G.L.Belenkii, M.O.Godzhaev, E.Yu.Salaev, “Indirect excitons in gallium sulfide,” JETP Lett., 26, 263 (1977).

  27. G.L.Belenkii, L.N.Alieva, R.Kh.Nani, E.Yu.Salaev, “Vibrational spectrum of InSe,” Phys. Status Solidi, 82(a), 705 (1977).

  28. G.L.Belenkii, E.Yu.Salaev, R.Kh.Nani, R.A.Suleimanov, “Radiative decay of indirect excitons in GaSe,” Sov. Phys. Semicond., 11, 506 (1977).

  29. G.L.Belenkii, L.N.Alieva, M.A.Gezalov, R.Kh.Nani, “Energy spectrum and structure of Ga1-xInSe crystals,” Sov. Phys. Semicond., 12, 60 (1978).

  30. G.L.Belenkii, L.N.Alieva, R.Kh.Nani, “Spectra of the lattice reflectivity of mixed III -VI crystals,” Sov. Solid State Phys., 20, 1860 (1978).

  31. G.L.Belenkii, L.N.Alieva, R.Kh.Nani, E.Yu.Salaev, “Vibrational spectra of GaTe,” Sov. Solid State Phys., 20, 544 (1978).

  32. G.B.Abdullaev, G.L.Belenkii, I.K.Neimanzade, “Photostimulated oscillations of semiconductor plate in an electric field,” Sov. Tech. Phys. Lett., 4, 428 (1978).

  33. G.L.Belenkii, M.O.Godzhaev, “Excitons in gallium sulfide,” Phys. Status Solidi, 85(a), 453 (1978).

  34. V.S.Bagaev, G.L.Belenkii, V.V.Zaitzev, E.Yu.Salaev, V.B.Stopachinskii, “Hot luminescence in gallium selenide,” Sov. Phys. Solid State, 21, 1275 (1979).

  35. L.N.Alieva, G.L.Belenkii, I.I.Reshina, E.Yu.Salaev, “Raman scattering of light and interlayer interaction in InSe crystals,” Sov. Phys. Solid State, 21, 90 (1979).

  36. S.S.Ivchenko, V.I.Konovalov, S.M.Okulov, G.L.Belenkii, E.Yu.Salaev, “Influence of temperature on ESR of Mn2+ and antiferromagnetic inclusions in layered GaSe:Mn crystals,” Sov. Phys. Solid State, 21, 174 (1979).

  37. G.L.Belenkii, M.O.Godzhaev, N.T.Mamedov, E.Yu.Salaev, R.A.Suleimanov, “The nature of energy bands of III -VI layered crystals near the absorption edge,” Phys. Status Solidi, 53A, 137 (1979).

  38. V.S.Bagaev, G.L.Belenkii, V.V.Zaitzev, E.Yu.Salaev, V.B.Stopachinskii, “Characteristics of the temperature dependence of the radiative recombination intensity of GaSxSe1-x crystals,” JETP Lett., 29, 46 (1979).

  39. G.L.Belenkii, “Nature of three-dimensional electronic states near the absorption edge of layer III -YI crystals,” Sov. Phys. Semicond., 13, 240 (1980).

  40. G.L.Belenkii, E.Yu.Salaev, R.A.Suleimanov, E.I.Mirsoev, “Effect of uniaxial stress on exciton spectra in GaSe,” Sov. Phys. Solid State, 22, 1842 (1980).

  41. G.L.Belenkii, E.Yu.Salaev, R.A.Suleimanov, “Radiative recombination in GaSe due to internal structure defects,” Sov. Phys. Solid State, 22, 1476 (1980).

  42. S.G.Abdullaeva, G.L.Belenkii, N.T.Mamedov, “Near-band-edge optical properties of TlGaS2xSe2(1-x),” Phys. Status Solidi (b), 102, K19 (1980).

  43. G.L.Belenkii, M.O.Godzhaev, R.Kh.Nani, E.Yu.Salaev, “Influence of izoelectronic oxygen impurities on the edge luminescence spectrum of GaSe,” Sov. Phys. Semicond., 14, 1420 (1980).

  44. G.L.Belenkii, I.K.Neimanzade, E.Yu.Salaev, “Oscillations of photocurrent in layer semiconductors due to the internal interference of light,” Sov. Phys. Semicond., 15, 717 (1981).

  45. S.G.Abdullaeva, G.L.Belenkii, N.T.Mamedov, “Exciton states in TlGaS2xSe2(1-x) semiconductors,” Sov. Phys. Semicond., 15, 540 (1981).

  46. G.L.Belenkii, E.Yu.Salaev, R.A.Suleimanov, E.I.Mirzoev, “The influence of pressure on the electronic spectra of III -VI semiconductors,” Phys. Status Solidi, 63a, 97 (1981).

  47. S.G.Abdullaeva, G.L.Belenkii, M.O.Godzhaev, N.T.Mamedov, “Excitons in TlGaS2,” Phys. Status Solidi (b), 103, K 61 (1981).

  48. G.L.Belenkii, S.G.Abdullaeva, A.V.Solodukhin, R.A.Suleimanov, “Thermal expansion of GaS and TlGaS2,” Solid State Commun., 44, 1613 (1982).

  49. G.L.Belenkii, R.A.Suleimanov, “The energy spectra of uniaxially deformed layered semiconductors III -YI,” Solid State Commun., 41, 549 (1982).

  50. G.L.Belenkii, E.Yu.Salaev, R.A.Suleimanov, N.A.Abdullaev, “The nature of temperature dependence of energy gaps in layered semiconductors III -VI,” Solid State Commun., 47, 263 (1983).

  51. G.L.Belenkii, V.B.Stopachinskii, “Electronic and vibrational spectra of III-VI layered semiconductors,” Sov. Phys. Usp., 26, 497 (1983).

  52. S.G.Abdullaeva, G.L.Belenkii, R.Kh.Nani, E.Yu.Salaev, “Temperature-induced shift of an exciton band and deformation effects in layered TlGaS2 crystals,” Sov. Phys. Semicond., 17, 1320 (1983).

  53. G.L.Belenkii, R.A.Suleimanov, “Applicability of the virtual crystal model to III -VI layer semiconductors,” Sov. Phys. Solid State, 26, 2233 (1984).

  54. G.L.Belenkii, R.A.Suleimanov, N.A.Abdullaev, V.Ya.Stenshraiber, “Thermal expansion of layered crystals, the Lifshitz model,” Sov. Phys. Solid State, 26, 2142 (1984).

  55. G.L.Belenkii, M.O.Godzhaev, “Characteristics of radiative recombination in indium selenide at different optical excitation densities,” Sov. Phys. Solid State, 26, 501 (1984).

  56. G.L.Belenkii, V.A.Goncharov, Yu.A.Osipian, R.A.Suleimanov, “Radiative recombination spectra of plastically deformed gallium selenide,” Sov. Phys. Solid State, 26, 1983 (1984).

  57. G.L.Belenkii, E.Yu.Salaev, R.A.Suleimanov, N.A.Abdullaev, “Thermal expansion and phase transition of TlInS2,” Solid State Commun., 53, 601 (1985).

  58. G.L.Belenkii, E.Yu.Salaev, R.A.Suleimanov, N.A.Abdullaev, “The nature of negative linear expansion in layered crystals,” Solid State Commun., 53, 967 (1985).

  59. G.B.Abdullaev, G.L.Belenkii, M.O.Godzhaev, E.T.Aliev, “Electron-hole plasma and electron-hole liquid in layered InSe,” Solid State Commun., 56, 961 (1985).

  60. E.T.Aliev, V.S.Bagaev, G.L.Belenky, M.O.Godzhaev, “High-temperature electron-hole liquid in layered gallium sulfide,” JETP Lett., 43, 566 (1986).

  61. N.A.Abdullaev, L.N.Alieva, G.L.Belenkii, M.Nezimetdinova, “Thermal expansion of TlSe and its optical properties,” Sov. Phys. Semicond., 13, 1066 (1986).

  62. G.B.Abdullaev, E.T.Aliev, G.L.Belenkii, M.O.Godzhaev, “Temporal evolution of density of an electron-hole liquid in indium selenide,” Sov. Phys. Solid State, 28, 1629 (1986).

  63. G.L.Belenkii, M.O.Godzhaev, E.Yu.Salaev, E.T.Aliev, “High-temperature electron-hole liquid in layered gallium selenide,” J.Appl. Phys. Commun., 6, 111 (1986).

  64. G.L.Belenkii, M.O.Godzhaev, E.Yu.Salaev, E.T.Aliev, “High-temperature electron-hole liquid in layered InSe, GaSe, GaS crystals,” Sov. Phys. JETP, 64, 1117 (1986).

  65. G.L.Belenkii, M.O.Godzhaev, V.N.Zverev, “Observation of the region of 2E electron gas in layered InSe,” JETP Lett., 43, 770 (1986).

  66. G.L.Belenkii, E.Yu.Salaev, R.A.Suleimanov, “Deformation effects in layer crystals,” Sov. Phys. Usp., 31, 433 (1988).

  67. G.L.Belenkii, “Electron-hole liquid and two dimensional electron gas in layered semiconductors III –IV,” Sov. Phys. Usp., 31, 955 (1988).

  68. G.L.Belenkii, E.A.Virodov, V.N.Zverev, “Quantum Hall effect in layered crystals of InSe,” Sov. Phys. JETP, 67, 2548 (1988).

  69. G.L.Belenkii, N.A.Abdullaev, V.N.Zverev, V.Ya.Stenshraiber, “Nature of the conductivity anisotropy and distinctive features in the localization of electrons in layered indium selenide,” JETP Lett., 47, 584 (1988).

  70. G.L.Belenkii, E.A.Virodov, V.V.Zverev, “Quantum transport studies of electron accumulation layers in InSe bulk crystals,” IL. Nuovo Cimento, 11 D, 1571 (1989).

  71. G.L.Belenky, S.M.Green, A.Roytburd, C.J.Lobb, S.J.Hagen, R.L.Greene, M.Forrester, J.Talvacchio, “Effect of stress along the ab plane on the Jc and Tc of YBa2Cu3O7 thin films,” Phys. Rev. B, 44, 10117 (1991).

  72. M.Mastrapasqua, S.Luryi, G.L.Belenky, P.A.Garbinski, D.O.Sivco, A.Y.Cho, “Multiterminal light emitting logic device electrically reprogrammable between OR and NAND functions,” IEEE Trans. Electr. Dev., 40, 1371 (1993); IEDM Tech. Digest (1992).

  73. G.L.Belenky, P.A.Garbinski, S.Luryi, M.Mastrapasqua, A.Y.Cho, R.A.Hamm, T.R.Hayes, E.J.Laskowski, D.L.Sivco, P.R.Smith, “Collector-up light emitting charge injection transistors in n-InGaAs/InAlAs/p-InGaAs and n-InGaAs/InP/p-InGaAs heterostructures,” J. Appl. Phys., 73, 8618 (1993).

  74. G.L.Belenky, P.A.Garbinski, P.R.Smith, S.Luryi, A.Y.Cho, R.A.Hamm, D.L.Sivco, “Microwave performance of top-collector charge injection transistors on InP substrate,” Semiconduct. Sci. Technol., 9, 1215 (1994); IEDM Tech. Digest, 423 (1993).

  75. G.L.Belenky, A.Kastalsky, S.Luryi, P.A.Garbinski, A.Y.Cho, D.L.Sivco, “Measurement of the effective hole temperature under hot electron injection in InGaAs/InAlAS heterostructure,” Appl. Phys. Lett., 64, 2247 (1994).

  76. G.L.Belenky, R.F.Kazarinov, J.Lopata, S.Luryi, T.Tanbun-Ek, P.A.Garbinski, “Direct measurement of the carrier leakage out of the active region in InGaAsP/InP laser heterostructures,” IEEE Trans. Electr. Dev., 42, 215 (1995).

  77. R.F.Kazarinov, G.L.Belenky, “Novel design of semiconductor lasers for optical communication,” Physics and Simulation of Optoelectronic Devices, III, 2399, 386 (1995).

  78. R.F.Kazarinov, G.L.Belenky, “Novel design of AlGaInAs/InP lasers operating at 1.3µm,” IEEE J. of Quantum Electron., 31, 423 (1995).

  79. M.Y.Frankel, G.L.Belenky, S.Luryi, T.F.Carruthers, M.L.Dennis, A.Y.Cho, R.A.Hamm, D.L.Sivco, “Carrier dynamic and photodetection in charge injection transistors,” J. Appl. Phys., 79, 3312 (1996).

  80. G.L.Belenky, L.Reynolds, R.F.Kazarinov, S.Swamatanian, S.Luryi, J.Lopata, “Effect of p-doping profile on the performance of InGaAsP/InP MQW lasers,” IEEE J. of Quant. Electron, 32, 1450 (1996).

  81. G.E.Shtengel, R.F.Kazarinov, G.L.Belenky, C.L.Reynolds, “Wavelength chirp and carrier temperature dependence on current in MQW InGaAs/InP Laser,” IEEE J. of Quant. Electron., 33, 1396 (1997).

  82. G.E.Shtengel, P.A.Morton, R.F.Kazarinov, D.A.Ackerman, M.S.Hybertsen, G.L.Belenky, C.L.Reynolds, “Experimental study of physical parameters of semiconductor lasers,” Physics and Simulation of Optoelectronic Devices V, 2994, 678 (1997).

  83. Mikhail V. Kisin, Vera B. Gorfinkel, Michael A. Stroscio, Gregory Belenky, Serge Luryi, “Influence of complex phonon spectra on intersubband optical gain,” J. Appl. Phys., 82, 2031 (1997).

  84. G.L.Belenky, D.V.Donetsky, C.L.Reynolds, Jr., R.F.Kazarinov, G.E.Shtengel, S.Luryi, J.Lopata, “Temperature performance of 1.3µm InGaAsP/InP lasers with different profile of p-doping,” IEEE Photon. Technol. Lett., 9, 1558 (1997).

  85. Mikhail V. Kisin, Michael A. Stroscio, Gregory Belenky, Vera B. Gorfinkel, Serge Luryi, “Effects of interface phonon scattering in three-interface heterostructures,” J. Appl. Phys., 83, 4816 (1998).

  86. Mikhail V. Kisin, Michael A. Stroscio, Gregory Belenky, Serge Luryi, “Electron-plasmon relaxation in quantum wells with inverted subband occupation,” Appl. Phys. Lett., 73, 2075 (1998).

  87. D.V.Donetsky, G.L.Belenky, D.Z.Garbuzov, H.Lee, R.U.Martinelly, G.Taylor, S.Luryi, J.C.Connolly, “Direct measurements of heterobarrier leakage current and modal gain in 2.3 µm double QW p-substrate InGaAsSb/AlGaAsSb broad area lasers,” IEE Electron. Lett., 35, 298 (1999).

  88. D.Z.Garbuzov, H.Lee, V.Khalfin, R.Martinelli , J.C.Connolly, G.L.Belenky, “2.3-2.7 µm room temperature CW operation of InGaAsSb/A1GaAsSb broad waveguide SCH-QW diode lasers,” IEEE Photon. Technol. Lett., 11, 794 (1999).

  89. G.L.Belenky, C.L.Reynolds, Jr., D.V.Donetsky, G.E.Shtengel, M.Hybertsen, M.A.Alam, G.A.Baraff, R.K.Smith, R.F.Kazarinov, J.Winn, L.E.Smith, “Role of p-doping profile and regrowth on the static characteristics of 1.3µm MQW InGaAsP/InP lasers. Experiment and modeling,” IEEE J. of Quantum Electron., 35, 1515 (1999).

  90. G.Belenky, M.Dutta, V.Gorfinkel, G.I.Haddad, G.J.Iafrate, K.W.Kim, M.Kisin, S.Luryi, M.A.Stroscio, J.P.Sun, H.B.Teng, S.G.Yu, “Tailoring of optical phonon modes in nanoscale semiconductor structures: role of interface-optical phonons in quantum-well lasers,” Physica B, 263, 462 (1999).

  91. M.Stroscio, M.Kisin, G.Belenky, S.Luryi, “Phonon enhanced inverse population in asymmetric double quantum wells,” Appl. Phys. Lett., 75, 3258 (1999).

  92. D.Z. Garbuzov, R.J. Menna, M.A. Maiorov, H. Lee, V. Khalfin, L.A. DiMarco, D.R. Capewell, R.U. Martinelli, G.L. Belenky, J.C. Connolly, “2.3- to 2.7-µm room-temperature cw operation of InGaAsSb/AlGaAsSb broad-contact and single-mode ridge-waveguide SCH-QW diode lasers,” Proc. SPIE, 3628, 124 (1999).

  93. M.Maiorov, J.Wang, D.Baer, H.Lee, G.Belenky, R.Hanson, J.Connolly, D.Garbuzov, “New room temperature CW InGaAsSb/AlGaAsSb QW ridge diode lasers and their application to CO measurements near 2.3 µm,” Proc. SPIE, 3855, 62 (1999).

  94. M.Kisin, M.Stroscio, G.Belenky, S.Luryi, “Electron-plasmon resonance in quantum wells with inverted subband population,” Physica E, 5, 196 (2000).

  95. G.Belenky, C.L.Reynolds, Jr., L.Shterengas, M.S.Hybertsen, D.V.Donetsky, G.E.Shtengel, S.Luryi, “Effect of p-doping on temperature dependence of differential gain in FP and DFB 1.3µm InGaAsP/InP multiple quantum well lasers,” IEEE Photon. Technol. Lett., 12, 969 (2000).

  96. L.Shterengas, R.Menna, W.Trussell, D.Donetsky, G.Belenky, J.Connolly, D.Garbuzov "Effect of heterobarrier leakage on the performance of high power 1.5µm InGaAsP MQW lasers,” J. Appl. Phys., 88, 2211 (2000).

  97. M.Kisin, M.Stroscio, S.Luryi, G.Belenky, “Interband tunneling depopulation in type-II InAs/GaSb cascade laser heterostructure,” Physica E, 10, 576 (2001).

  98. D.V.Donetsky, D.Westerfeld, G.L.Belenky, R.U.Martinelli, D.Z.Garbuzov, J.C.Connolly, “Extraordinarily wide optical gain spectrum in 2.2-2.5µm In(Al)GaAsSb/GaSb quantum-well ridge-waveguide lasers,” J. Appl. Phys., 90, 4281 (2001).

  99. B.Laikhtman, S.Luryi, G.Belenky, “InAs/GaSb-based lateral current injection laser,” J. Appl. Phys., 90, 5478 (2001).

  100. G.L. Belenky, D.Z. Garbuzov, D.V. Donetsky, H. Lee, R.U. Martinelli, J.C. Connolly, “Direct measurements of the optical loss, gain and carrier leakage in room temperature operated 2.3µm InGaAsSb/AlGaAsSb QW lasers,” Electro-Optics and Microelectronics: Proceedings of the 11th International Meeting, Held in Tel Aviv, Israel, 9-11 November 1999 (2001).

  101. S.Suchalkin, D.Westerfeld, D.Donetski, S.Luryi, G.Belenky, R.Martinelli, I.Vurgaftman, J.Meyer, “Optical gain and loss in 3µm diode, “W” quantum-well lasers,” Appl. Phys. Lett., 80, 2833 (2002).

  102. G.Belenky, L.Shterengas, C.L.Reynolds Jr., M.W.Focht, M.S.Hybertsen, B.Witzigmann, “Direct measurement of lateral carrier leakage in 1.3µm InGaAsP MQW CMBH lasers,” IEEE J. Quantum Electron., 38, 1276 (2002).

  103. G.Belenky, L.Shterengas, C.W.Trussell, C.L.Reynolds, Jr., M.S.Hybertsen, R.Menna, “Trends in semiconductor laser design: Balance between leakage, gain and loss in InGaAsP/InP MQW structures,” Future Trends in Microelectronics: The Nano Millennium, edited by S. Luryi, J. Xu, A. Zaslavsky, Wiley, ISBN: 0-471-21247-4 (2002).

  104. M.V.Kisin, M.A.Stroscio, G.Belenky, S.Luryi, “Interband phonon assisted tunneling in InAs/GaSb heterostructures,” PHYSICA B, 316, 223 (2002).

  105. M.V.Kisin, M.A.Stroscio, G.Belenky, S.Luryi, “Electron-phonon resonance in InAs/GaSb type-II laser heterostructures,” Appl. Phys. Lett., 80, 2174 (2002).

  106. J.G.Kim, L.Shterengas, R.U.Martinelli, G.L.Belenky, D.Z.Garbuzov, W.K.Chan, “Room-temperature 2.5 µm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves,” Appl. Phys. Lett., 81, 3146 (2002).

  107. L.Shterengas, G.L.Belenky, A.Gourevitch, J.G.Kim, R.U.Martinelli, “Measurements of a-factor in 2–2.5 µm type-I In(Al)GaAsSb/GaSb high power diode lasers,” Appl. Phys. Lett., 81, 4517 (2002).

  108. D.Donetsky, S.Anikeev, G.Belenky, S.Luryi, C.A.Wang, G.Nichols, “Reduction of interfacial recombination in GaInAsSb/GaSb double heterostructures,” Appl. Phys. Lett., 81, 4769 (2002).

  109. B. Witzigmann, M.S. Hybertsen, C.L. Reynolds, Jr., G.L. Belenky, L. Shterengas, G.E. Shtengel, “Microscopic simulation of the temperature dependence of static and dynamic 1.3 ?m multi-quantum-well laser performance,” IEEE J. Quantum Electron., 39, 120 (2003).

  110. D. Westerfeld, S. Suchalkin, M. V. Kisin, G. Belenky, J. Bruno, R. Tober, “Experimental study of optical gain and loss in 3.4-3.6 µm interband cascade lasers,” IEE Proc. Optoelectron., 150, 293 (2003).

  111. S. Suchalkin, J. Bruno, R. Tober, D. Westerfeld, M. V. Kisin, G. Belenky, “Experimental study of the optical gain and loss in InAs/GaInSb interband cascade lasers,” Appl. Phys. Let., 83, 1500 (2003).

  112. M. V. Kisin, M. A. Stroscio, G. Belenky, S. Luryi, “Resonant phonon-assisted depopulation in type-I and type-II intersubband laser heterostructures,” Institute of Physics Conference Series, 174, 44, (2003).

  113. A. Gourevitch, G. Belenky, D. Donetsky, B. Laikhtman, D. Westerfeld, C. W. Trussell, H. An, Z. Shellenbarger, R. Martinelli, “1.47–1.49 µm InGaAsP/InP diode laser arrays,” Appl. Phys. Lett., 83, 617 (2003).

  114. J. G. Kim, L. Shterengas, R. U. Martinelli, G. L. Belenky, “High-power room-temperature continuous wave operation of 2.7 and 2.8 ?m In(Al)GaAsSb/GaSb diode lasers,” Appl. Phys. Lett., 83, 1926 (2003).

  115. S. Anikeev, D. Donetsky, G. Belenky, S. Luryi, C. A. Wang, J. M. Borrego, G. Nichols, “Measurement of the Auger recombination rate in p-type 0.54-eV GaInAsSb by time-resolved photoluminescence,” Appl. Phys. Lett., 83, 3317 (2003).

  116. G.L. Belenky, J.G. Kim, L. Shterengas, A. Gourevitch, R.U. Martinelli, “High power 2.3-µm laser arrays emitting 10 W CW at room temperature,” IEE Electron. Lett., 40, 737 (2004).

  117. L. Shterengas, G.L. Belenky, J.G. Kim, R.U. Martinelli, “Design of high-power room-temperature continuous-wave GaSb-based type-I quantum-well lasers with ?>2.5 µm,” Semicond. Sci. Tech., 19, 655 (2004).

  118. B. Laikhtman, A. Gourevitch, D. Donetsky, D. Westerfeld, G. Belenky, “Current spread and overheating of high power laser bars,” J. of Appl. Phys., 95, 3880 (2004).

  119. L. Shterengas, G.L. Belenky, A. Gourevitch, D. Donetsky, J.G. Kim, R.U. Martinelli, and D. Westerfeld, “High power 2.3-?m GaSb-based linear laser array,” IEEE Photon. Technol. Lett., 16, 2218 (2004).

  120. M.V. Kisin, S.D. Suchalkin, G. Belenky, J.D. Bruno, R. Tober, S. Luryi, “Analysis of the Temperature Performance of Type-II Interband Cascade Lasers,” Appl. Phys. Lett., 85, 4310 (2004).

  121. C. A. Wang, D. A. Shiau, P. G. Murphy, P. W. O'Brien, R. K. Huang, M. K. Connors, A. C. Anderson, D. Donetsky, S. Anikeev, G. Belenky, D. M. Depoy, G. Nichols, “Wafer bonding and epitaxial transfer of GaSb-based epitaxy to GaAs for monolithic interconnection of thermophotovoltaic devices,” J. of Electron. Mater., 33, 213 (2004).

  122. D. Westerfeld, S. Suchalkin, R. Kaspi, G. Belenky, “Absorption and single-pass gain measurements in optically pumped type-II midinfrared laser structures,” IEEE J. Quantum Electron., 40, 1657 (2004).

  123. C. A. Wang, D. A. Shaiu, D. Donetsky, S. Anikeev, G. Belenky, S. Luryi, “Effect of growth interruption on surface recombination velocity in GaInAsSb/AlGaAsSb heterostructures grown by organometallic vapor-phase epitaxy,” J. of Cryst. Growth, 272, 711 (2004).

  124. A. Thränhardt, I. Kuznetsova, C. Schlichenmaier, S. W. Koch, L. Shterengas, G. Belenky, J.-Y. Yeh, L. J. Mawst, N. Tansu, J. Hader, J. V. Moloney, W. W. Chow, “Nitrogen incorporation effects on gain properties of GaInNAs lasers: Experiment and theory,” Appl. Phys. Lett., 86, 201117 (2005).

  125. P.J. McCann, P. Kamat, Y. Li, A. Sow, H.Z. Wu, G. Belenky, L. Shterengas, J.G. Kim, R. Martinelli, “Optical pumping of IV-VI semiconductor multiple quantum well materials using a GaSb-based laser with emission at lambda=2.5 um,” J. Appl. Phys., 97, 053103 (2005).

  126. A.Gourevitch, B. Laikhtman, D. Westerfeld, D. Donetsky, G. Belenky, C. W. Trussell, Z. Shellenbarger, H. An, R. U. Martinelli, “Transient thermal analysis of InGaAsP-InP high-power diode laser arrays with different fill factors,” J. Appl. Phys., 97, 084503, (2005).

  127. B. Laikhtman, A. Gourevitch, D. Westerfeld, D. Donetsky, G. Belenky, “Thermal resistance and optimal fill factor of high power laser bar,” Semicond. Sci. Technol., 20, 1087 (2005).

  128. S. Suchalkin, L. Shterengas, M.V. Kisin, S. Luryi, G. Belenky, R. Kaspi, A. Ongstad, J.G.Kim, R.U.Martinelli, “Mechanism of the temperature sensitivity of mid-IR GaSb based semiconductor lasers,” Appl. Phys. Lett., 87, 041102 (2005).

  129. C.A. Wang, D.A. Shiau, D. Donetsky, S. Anikeev, G. Belenky, S. Luryi, “Extremely low surface recombination velocity in GaInAsSb/AlGaAsSb heterostructures,” Appl. Phys. Lett., 86, 101910 (2005).

  130. L. Shterengas, G. Belenky, J.-Y. Yeh, L.J. Mawst, N. Tansu, “Differential gain and linewidth-enhancement factor in dilute-nitride GaAs-based 1.3um diode lasers,” J. Sel. Topics Quantum Electron., 11, 1063 (2005).

  131. S. Suchalkin, M.V. Kisin, S. Luryi, G. Belenky, F.J. Towner, J.D. Bruno, C. Monroy, R.L. Tober, "Widely tunable type-II interband cascade laser,” Appl. Phys. Lett., 88, 031103 (2006).

  132. M.W. Dashiell, J.F. Beausang, H. Ehsani, G.J. Nichols, D.M. Depoy, L.R. Danielson, P. Talamo, K.D. Rahner, E.J. Brown, S.R. Burger, P.M. Fourspring, W.F. Topper, P.F. Baldasaro, C.A. Wang, R. Huang, M. Connors, G. Turner, Z. Shellenbarger, G. Taylor, Jizhong Li, R. Martinelli, D. Donetsky, S. Anikeev, G. Belenky, S. Luryi, “Quaternary InGaAsSb Thermophotovoltaic Diodes,” IEEE Trans. Electron. Devices, 53, 2879 (2006).

  133. M. V. Kisin, S. Suchalkin, G. Belenky, “Electrically tunable quantum cascade laser,” IEEE Photon.Technol. Lett., 19, 360 (2007).

  134. S. Suchalkin, M.V. Kisin, S. Luryi, G. Belenky, J. Bruno, F.J. Towner, C.Monroy, R. Tober, “Wavelength tuning of Interband Cascade Lasers based on the Stark Effect,” Future Trends in Microelectronics: Up the Nano Creek, edited by S. Luryi, J. Xu, A. Zaslavsky, Wiley, ISBN: 978-0-470-08146-4 (2007).

  135. L. Shterengas, G.L. Belenky, D.Donetsky, M. Kisin, “High power 2.4 µm heavily strained Type-I quantum well GaSb-based diode lasers with more than 1W of continuous wave output power and a maximum power conversion efficiency of 17.5 %,” Appl. Phys. Lett., 90, 011119 (2007).

  136. S. Suchalkin, M.V. Kisin, S. Luryi, G. Belenky, F.J. Towner, J.D. Bruno, R.L. Tober, “High-speed wavelength tuning of MidIR cascade lasers,” IEEE Photon. Technol. Lett., 19, 360 (2007).

  137. D. Donetsky, G. Kipshidze, L. Shterengas, T. Hosoda, G. Belenky, “2.3 µm type-I quantum well GaInAsSb/AlGaAsSb/GaSb laser diodes with quasi-CW output power of 1.4 W,” Electron. Lett., 43, 810 (2007).

  138. T. Hosoda, G. Belenky, L. Shterengas, G. Kipshidze, M. Kisin, “Continuous-wave room temperature operated 3.0 µm Type I GaSb-based lasers with quinternary AlInGaAsSb barriers,” Appl. Phys. Lett., 92, 091106 (2008).

  139. S. Suchalkin, D. Westerfeld, G. Belenky, J.D. Bruno, J. Pham, F. Towner, R.L. Tober, “Measurement of Semiconductor Laser Gain by the Segmented Contact Method Under Strong Current Spreading Conditions,” IEEE J. Quantum Electron., 44, 561 (2008).

  140. G. Belenky, D. Donetsky, L. Shterengas, T. Hosoda, J. Chen, G. Kipshidze, M. Kisin, D. Westerfeld, “Interband GaSb-based laser diodes for spectral regions of 2.3-2.4 µm and 3-3.1 µm with improved room-temperature performance,” Proc. SPIE, 6900, 690004 (2008).

  141. L. Shterengas, G. Belenky, G. Kipshidze, T. Hosoda, “Room Temperature Operated 3.1µm Type-I GaSb-based Diode Lasers with 80 mW Continuous Wave Output Power,” Appl. Phys. Lett., 92, 171111 (2008).

  142. G. Belenky , D. Donetsky , L. Shterengas , T. Hosoda , J. Chen , G. Kipshidze , M. Kisin, D. Westerfeld, “Interband GaSb-based laser diodes for spectral regions of 2.3-2.4 µm and 3-3.1 µm with improved room-temperature performance,” Proc. SPIE, 6900, 690004 (2008).

  143. L.E. Vorobyev, V.L. Zerova, K.S. Borshchev, Z.N. Sokolova, I.S. Tarasov, G. Belenky, “Charge-Carrier Concentration and Temperature in Quantum Wells of Laser Heterostructures Under Spontaneous and Stimulated-Emission Conditions,” Semicond., 42, 737 (2008).

  144. G. Belenky, L. Shterengas, D. Donetsky, M. Kisin, G. Kipshidze, “Advances in Type-I GaSb Based Lasers,” Jpn. J. Appl. Phys., 47, 8236 (2008).

  145. S. Suchalkin, S. Jung, G. Kipshidze, L. Shterengas, T. Hosoda, D. Westerfeld, D. Snyder, G. Belenky, “GaSb based light emitting diodes with strained InGaAsSb type I quantum well active regions,” Appl. Phys. Lett., 93, 081107 (2008).

  146. L. Shterengas, G. Belenky, T. Hosoda, G. Kipshidze, S. Suchalkin, “Continuous wave operation of diode lasers at 3.36 µm at 12 degrees C,” Appl. Phys. Lett., 93, 011103 (2008).

  147. J. Chen, D. Donetsky, L. Shterengas, M. Kisin, G. Kipshidze, G. Belenky, “Effect of quantum well compressive strain above 1% on differential gain and threshold current in type-I GaSb-based diode lasers,” IEEE J. Quantum. Electron. 44, 1204 (2008).

  148. J.Y.T. Huang, L.J. Mawst, S. Jha, T.F. Kuech, D. Wang, L. Shterengas, G. Belenky, J.R. Meyer, I. Vurgaftman, “MOVPE growth of Ga(As)SbN on GaSb substrates,” J. Cryst. Growth 310, 4839 (2008).

  149. L.E. Vorobjev, V.L. Zerova, D.A. Firsov, V.A. Shalygin, M.Ya.Vinnichenko, V.Yu. Panevin, P. Thumrongsilapa, K.S. Borshchev, A.E.Zhukov, Z.N. Sokolova, I.S. Tarasov, G. Belenky, S. Hanna, A.Seilmeier, “Hot charge-carrier electroluminescence from laser nanostructures in the spontaneous and stimulated emission modes and absorption of IR radiation by hot electrons in quantum wells,” Bulletin of the Russian Academy of Sciences: Physics, 73, 73 (2009).

  150. J.Bradshaw, J. D. Bruno, F. Towner, C. Shiner, J. Pham, S. Suchalkin, G. Belenky, “Development of a mid-infrared interband cascade LED array,” Proc. SPIE, 6942, 69420G (2008).

  151. D. Wang, S.P. Svensson, L. Shterengas, G. Belenky, C.S. Kim, I. Vurgaftman, J.R. Meyer, “Band edge optical transitions in dilute-nitride GaNSb,” J. Appl. Phys., 105, 014904 (2009).

  152. J. Chen, G. Kipshidze, L. Shterengas, T. Hosoda, Y. Wang, D. Donetsky, G. Belenky, “2.7µm GaSb based diode lasers with quinary waveguide,” IEEE Photon. Technol. Lett., 21, 1112, (2009).

  153. T. Hosoda, G. Kipshidze, L. Shterengas, G. Belenky, “200mW type-I GaSb-based laser diodes operating at 3µm. Role of waveguide width,” Appl. Phys. Lett., 94, 261104 (2009).

  154. S. Jung, S. Suchalkin, G. Kipshidze, D.Westerfeld, D. Snyder, M.Johnson, G. Belenky, “GaSb-Based Type I Quantum Well Light Emitting Diode Addressable Array Operated at Wavelengths up to 3.66um,” IEEE Photon. Technol. Lett., 21, 1087, (2009).

  155. D. Wang, S.P. Svensson, L. Shterengas, G. Belenky, C.S. Kim, I. Vurgaftman, J.R. Meyer, “Band edge optical transitions in dilute-nitride GaNSb,” J. Appl. Phys. 105, 014904 (2009).

  156. L. Shterengas, G. Kipshidze, T. Hosoda, J. Chen, G. Belenky, “Diode lasers emitting at 3 um with 300 mW of continuous-wave output power,” Electron, Lett., 45, 942 (2009).

  157. A.V. Okishev, D. Westerfeld, L. Shterengas, G. Belenky, “A stable mid-IR, GaSb-based diode laser source for the cryogenic target layering at the Omega Laser Facility,” Optics Express, 17, 15760 (2009).

  158. G. Belenky, L. Shterengas, D. Wang, G. Kipshidze, L. Vorobjev, “Continuous wave operated 3.2 um type-I quantum-well diode lasers with the quinary waveguide layer,” Semicond. Sci. Technol., 24, 115013 (2009).

  159. Dmitry Donetsky, Stefan P. Svensson, Leonid E. Vorobjev, Gregory Belenky, “Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures,” Appl. Phys. Lett., 95, 212104 (2009).

  160. D.A. Firsov, L.Shterengas, G. Kipshidze, V.L. Zerova, T. Hosoda, P. Thumrongsilapa, L.E. Vorobjev, G. Belenky, “Dynamics of photoluminescence and recombination processes in Sb-containing laser nanostructures,” Semicond., 44, 50 (2010).

  161. L. Shterengas, G. Kipshidze, T. Hosoda, G. Belenky, “GaSb-based type-I laser diodes operating at 3 µm and beyond,” Future Trends in Microelectronics: From Nanophotonics to Sensors and Energy, edited by S. Luryi, J. Xu, A. Zaslavsky Wiley, ISBN: 978-0-470-55137-0 (2010).

  162. A.V. Okishev, D. Wang, D. Westerfeld, L. Shterengas, G. Belenky, “Characterization of highly stable Mid-IR, GaSb-based laser diodes,” LACSEA, 2010 paper: LMA5

  163. J. Chen, T. Hosoda, G. Tsvid, R. Liang. D. Westerfeld, G. Kipshidze, L. Shterengas, G. Belenky, “Type-I GaSb based diode lasers operating at room temperature in 2 to 3.5 µm spectral region,” Proc. SPIE, 7686, 76860S (2010).

  164. J. Chen, T. Hosoda, G. Kipshidze, L. Shterengas, G. Belenky, A. Soibel, C. Frez, S. Forouhar, “Single Spatial Mode Room Temperature Operated 3.15 µm Diode Lasers,” Electron. Lett., 46, 367 (2010).

  165. L. E. Vorob’ev, V. L. Zerova, D. A. Firsov, G. Belenky, L. Shterengas, G. Kipshidze T. Hosoda, S. Suchalkin, M. Kisin, “Charge Carrier Recombination Mechanisms in Sb_Containing Quantum Well Laser Structures,” Bulletin of the Russian Academy of Sciences: Physics, 74, 69 (2010).

  166. S. Jung, S. Suchalkin, G. Kipshidze, D. Westerfeld, E. Golden, D. Snyder, G. Belenky, “Dual wavelength GaSb based type I quantum well mid-infrared light emitting diodes,” Appl. Phys. Lett 96, 191102 (2010).

  167. S.P. Svensson, D. Donetsky, D. Wang, P. Maloney, G. Belenky, “Carrier lifetime measurements in InAs/GaSb strained layer superlattice structures,” Proc. SPIE, 7660, 76601V (2010).

  168. D. Wang, S.P. Svensson, L. Shterengas, G. Belenky, “Near band edge optical absorption and photoluminescence dynamics in bulk InAsN dilute-nitride materials,” J. Cryst. Growth, 312, 2705 (2010).

  169. T. Hosoda, G. Kipshidze, G. Tsvid, L. Shterengas, G. Belenky, “Type-I GaSb-based laser diodes operating in 3.1-3.3 µm wavelength range,” IEEE Photon. Technol. Lett., 22, 718 (2010).

  170. T. Hosoda, G. Kipshidze, L. Shterengas, G. Belenky, “Diodes lasers emitting near 3.44 µm in continuous wave regime at 300 K,” Electron. Lett., 46, 1455 (2010).

  171. G. Kipshidze, T. Hosoda, W. L. Sarney, L. Shterengas, G. Belenky, “High-power 2.2-µm diode lasers with metamorphic arsenic-free heterostructures,” IEEE Photon. Technol. Lett., 23, 317 (2011).

  172. T. Hosoda, J. Chen, G. Tsvid, D. Westerfeld, R. Liang, G. Kipshidze, L. Shterengas and G. Belenky, “Progress in development of room temperature CW GaSb based diode lasers for 2-3.5 µm spectral region,” Int. J. High Speed Electron. Syst., 20, 43 (2011).

  173. G. Belenky, G. Kipshidze, D. Donetsky, S. P. Svensson, W. L. Sarney, H. Hier, L. Shterengas, D. Wang, Y. Lin, “Effects of carrier concentration and phonon energy on carrier lifetime in type-2 SLS and properties of InAs1-xSbx alloys,” Proc. SPIE, 8012, 80120W (2011).

  174. G. Belenky, L. Shterengas, G. Kipshidze, T. Hosoda, “Type-I diode lasers for spectral region above 3 µm,” IEEE J. Select. Top. Quantum Electron. 17, 1426 (2011).

  175. S. Jung, S. Suchalkin, D. Westerfeld, G. Kipshidze, E. Golden, D. Snyder, G. Belenky, “High dimensional addressable LED arrays based on type I GaInAsSb quantum wells with quinternary AlGaInAsSb barriers,” Semicond. Sci. Technol., 26, 085022 (2011).

  176. R. Liang, J. Chen, G. Kipshidze, D. Westerfeld, L. Shterengas, G. Belenky, “High-Power 2.2-µm Diode Lasers With Heavily Strained Active Region,” IEEE Photon. Technol. Lett., 23, 603 (2011).

  177. W. L. Sarney, S. P. Svensson, H. Hier, D. Donetsky, D. Wang, L. Shterengas, S.Suchalkin, G. Belenky, “New Approaches to Direct Bandgap III-V Materials for LWIR Detector Applications,” AIP Conf. Proc., 1416, 59-61 (2011).

  178. G. Belenky, D. Donetsky, G. Kipshidze, D. Wang, L. Shterengas, W. L. Sarney, S.P. Svensson, “Properties of unstrained InAs1-XSbX alloys grown on compositionally graded buffers”, Appl. Phys. Lett. 99, 141116 (2011).

  179. S. Suchalkin, G. Belenky, S. P. Svensson1, B. Laikhtman, D. Smirnov, L. C. Tung, and S. Bandara, “In-plane and growth direction electron cyclotron effective mass in short period InAs/GaSb semiconductor superlattices”, J. Appl. Phys. 110, 043720 (2011).

  180. S.P. Svensson, D. Donetsky, D. Wang, H. Hier, F.J. Crowne, G. Belenky, “Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization”, J. of Crystal Growth, 334, 103-107 (2011).

  181. T. Hosoda, G. Kipshidze, L. Shterengas, G. Belenky, "Single spatial mode 3 µm diode lasers with continuous wave output power of 15 mW at room temperature", Electron. Lett., vol. 47, no. 24, pp. 1341-1343 (2011).

  182. R. P. Leavitt, J. D. Bruno, J. L. Bradshaw, K. M. Lascola, J. T. Pham, F. J. Towner, S. Suchalkin, G. Belenky, I. Vurgaftman, C. L. Canedy, W. W. Bewley, C. S. Kim, M. Kim, C. D. Merritt, J. R. Meyer, “High performance interband cascade lasers at 3.8 microns”, Proceedings SPIE Novel In-Plane Semiconductor Lasers XI, vol. 8277, p. 82771E, February (2012).

  183. T. Hosoda, D. Wang, G. Kipshidze, W.L. Sarney, L. Shterengas, G. Belenky, ”3 µm diode lasers grown on (Al) GaInSb compositionally graded metamorphic buffer layers”, Semicond. Sci. Technol. vol. 27, p. 055011 (2012).

  184. S. P. Svensson, H. Hier, W. L. Sarney, D. Donetsky, D. Wang, G. Belenky, “Molecular beam epitaxy control and photoluminescence properties of InAsBi”, J. Vac. Sci. Technol. B 30, 02B109 (2012).

  185. W. L. Sarney, S. P. Svensson, H. Hier, G. Kipshidze, D. Donetsky, D. Wang, L. Shterengas, G. Belenky, “Structural and luminescent properties of bulk InAsSb”, J. Vac. Sci. Technol. B 30, 02B105 (2012).

  186. S. Jung, G. Kipshidze, R. Liang, S. Suchalkin, L. Shterengas, and G. Belenky, “GaSb based mid infrared single lateral mode lasers fabricated by selective wet etching technique with an etch stop layer,” J. Electron. Mater., 41, 899 (2012).

  187. S. Jung, R. Liang, G. Kipshidze, S. Suchalkin, L. Shterengas, and G. Belenky, “Single spatial mode 2 – 2.2 µm diode lasers fabricated by selective wet etching,” Semicond. Sci. Technol., 27, 085004 (2012).

  188. S. P. Svensson, W. L. Sarny, H. Hier, Y. Lin, D. Wang, D. Donetsky, L. Shterengas, G. Kipshidze, G. Belenky, “Band gap of InAs1-xSbx with native lattice constant,” Phys. Rev.B, 86, 245205 (2012)

  189. D. Wang, D. Donetsky, S. Jung, G. Belenky, “Carrier lifetime measurements in long-wave infrared InAs/GaSb superlattices under low excitation conditions,” J. Electron. Mater., 41, 3027 (2012).

  190. D. Wang, D. Donetsky, Y. Lin, G. Kipshidze, L. Shterengas, G. Belenky, W. L. Sarney, S. P. Svensson, “InAs1-xSbx alloys with native lattice parameters grown on compositionally graded buffers: structural and optical properties,” Int. J. High Speed Electron. Syst., 21, 1250013 (2012).

  191. G. Belenky, D. Wang, Y. Lin, D. Donetsky, G. Kipshidze, L. Shterengas, D. Westerfeld, W. L. Sarney, S. P. Svensson, “Metamorphic InAsSb/AlInAsSb heterostructures for optoelectronic applications,” Appl. Phys. Lett., 102, 111108 (2013).

  192. R, Liang, T, Hosoda, G, Kipshidze, L, Shterengas, G, Belenky, “GaSb-Based Diode Lasers With Asymmetric Separate Confinement Heterostructure,” IEEE Photon. Technol. Lett., 25, 925 (2013).

  193. S. Suchalkin, G. Belenky, T. Hosoda , S. Jung, M. A. Belkin, “Distributed Feedback Quantum Cascade Laser with optically tunable emission frequency,” Appl. Phys. Lett., 103, 041120 (2013).

  194. S. Suchalkin, S. Jung, R. L. Tober, M. A. Belkin, G. Belenky,“Optically tunable long wavelength infrared quantum cascade laser operated at room temperature,” Appl. Phys. Lett., 102, 011125 (2013).

  195. L. Shterengas, R. Liang, G. Kipshidze, T. Hosoda, S. Suchalkin, G. Belenky, “Type-I quantum well cascade diode lasers emitting near 3 µm,” Appl. Phys. Lett., 103, 121108 (2013).

  196. D. Wang, D. Donetsky, G. Kipshidze, Y. Lin, L. Shterengas, G. Belenky, W. Sarney, S. Svensson “Metamorphic InAsSb-based barrier photodetectors for the long wave infrared region,” Appl. Phys. Lett., 103, 051120 (2013).

  197. Y. Lin, D. Wang, D. Donetsky, L. Shterengas, G. Kipshidze, G. Belenky, S. P. Svensson, W. L. Sarney, H. S. Hier, “Conduction-and Valence-Band Energies in Bulk InAs1- x Sb x and Type II InAs1- x Sb x/InAs Strained-Layer Superlattices,” J. Electron. Mater., 42, 918 (2013).

  198. T. Hosoda, R. Liang, G. Kipshidze, L. Shterengas, G. Belenky, “Room temperature operated diffraction limited ?? 3 µm diode lasers with 37 mW of continuous-wave output power,” Electron. Lett., 49, 667 (2013).

  199. M. Ya. Vinnichenko, D. A. Firsov, L. E. Vorobjev, M. O. Mashko, L. Shterengas, G. Belenky, “Photoluminescence dynamics in InGaAsSb/AlGaAsSb quantum well nanostructures,” Semicond,. 47, 146 (2013).

  200. D. Wang, Y. Lin, D. Donetsky, G. Kipshidze, L. Shterengas, G. Belenky, S. P. Svensson, W. L Sarney, H. Hier “Infrared emitters and photodetectors with InAsSb bulk active region,” Proc. SPIE, 8704, 870410-1, (2013).

Conference Proceedings (from 1992)

  1. M.Mastrapasqua, S.Luryi, G.L.Belenky, P.A.Garbinski, D.O.Sivco A.Y.Cho, “Multiterminal light emitting logic device electrically reprogrammable between OR and NAND functions" 1992-IEDM, Tech. Digest, pp. 660 (1992).

  2. G.L.Belenky, S.Luryi, M.Mastrapasqua, P.A.Garbinski, A.Y.Cho, R.A.Hamm, T.R.Hayes, E.J.Laskowski, D.L.Sivco “Top-collector light-emitting charge injection transistors and logic elements," CLEO 1993, Tech. Digest, pp. 376 (1993).

  3. G.L.Belenky, P.A.Garbinski, P.R.Smith, S.Luryi, A.Y.Cho, R.A.Hamm, D.L.Sivco, “Microwave studies of self-aligned top-collector charge injection transistors," 1993-IEDM, Tech. Digest, pp. 423 (1993).

  4. G.L.Belenky, A.Kastalsky, S.Luryi, P.A.Garbinski, A.Y.Cho, D.L.Sivco, “Measurement of the effective temperature of majority carriers under injection of hot minority carriers in heterostructures," Proc. Int. Semicond. Device Research Symp. (ISDRS’93), pp. 189, Technical Digest, p. 189 (1993).

  5. G.L.Belenky, L.Reynolds, R.F.Kazarinov, S.Swamatanian, S.Luryi, J.Lopata “Effect of p-Doping Profile on Performance of Strained Multi-Quantum-Well InGaAWInP lasers. Experiment and Modeling," 15th IEEE Int. Semicond. Laser Conference, Conference Digest pp. 69 (1996), Haifa, Israel.

  6. M.V. Kisin, M.A. Stroscio, V.B. Gorfinkel, G. Belenky, S. Luryi, “Influence of complex phonon spectrum of heterostructure on gain lineshape in quantum cascade laser," Conference on Lasers and Electro-Optics, 1997 (CLEO’97), pp. 425 (1997).

  7. D.V. Donetsky, G.L. Belenky, C.L. Reynolds Jr., R.F. Kazarinov, S. Luryi, “Effect of p-doping on carrier leakage and characteristic temperature T0 of 1.3 µm strained InGaAsP/lnP multiple quantum well lasers," Conference on Lasers and Electro-Optics, 1997 (CLEO’97), pp. 157 (1997).

  8. D.V. Donetsky, C.L. Reynolds, Jr., G.L. Belenky, G.E. Shtengel, R.F. Kazarinov, S. Luryi, “Optimization of p-doping profile of 1.3-µm InGaAsP/InP MQW lasers for high-temperature operation," Conference on Lasers and Electro-Optics, 1998 (CLEO’98), pp. 302 (1998).

  9. G.L. Belenky, D.V. Donetsky, C.L. Reynolds, Jr., G.E. Shtengel, R.F. Kazarinov, S. Luryi, “1.3µm InGaAsP/InP MQW lasers for high temperature operation. Experiment and modeling," Conference on Lasers and Electro-Optics Europe, 1998 (1998 CLEO/EUROPE), pp. 227 (1998).

  10. D.V. Donetsky, G.L. Belenky, S. Luryi, D.Z. Garbuzov, H. Lee, R.U. Martinelli, J.C. Connolly, “Current and temperature dependencies of the modal gain in wide aperture 2.3 µm InGaAsSb/AlGaAsSb QW lasers," Conference on Lasers and Electro-Optics, 1999 (CLEO'99), pp.365 (1999).

  11. M.S. Hybertsen, M.A. Alam, G.A. Baraff, R.K. Smith, G.L Belenky, D.V. Donetsky, G.E. Shtengel, C.L. Reynolds, Jr., R.F. Kazarinov, “Role of doping profile on semiconductor laser performance: simulation and experiment," Conference on Laser and Electro-Optics, 1999 (CLEO'99), pp. 309 (1999).

  12. M.S. Hybertsen, M.A. Alam, G.A. Baraff, R.K. Smith, G.E. Shtengel, C.L. Reynolds Jr., R.F. Kazarinov, G.L. Belenky, “Microscopic simulation of optical gain in multi-quantum well lasers," Lasers and Electro-Optics Society 1999 (LEOS’99), pp. 657 (1999).

  13. G.L. Belenky, C.L. Reynolds, Jr., D.V. Donetsky, M.S. Hybertsen, L. Shterengas, G.E. Shtengel, R.F. Kazarinov, “Characterization of heterolasers with different p-doping profile," SPIE Photonics West, Physics and Simulation of Optoelectronic Devices VIII, January (2000), San Jose, CA.

  14. L. Shterengas, C.L. Reynolds, Jr., G. Belenky, M. Hybertsen, D. Donetsky, G. Shtengel, “Differential gain in 1.3µm InGaAsP/InP MQW lasers with p-doped active region," Conference on Lasers and Electro-Optics, 2000 (CLEO’00), May 2000, pp. 174, May (2000), San Francisco, CA.

  15. R. Menna, L. Shterengas, W. Trussell, D. Donetsky, M. Maiorov, G. Belenky, J. Connolly, D. Garbuzov, “Effect of p-cladding layer doping on pulsed, high power 1.5-µm InGaAsP MQW lasers," Int. Conference on Indium Phosphide and Related Materials, 2000 (IPRM’00), pp. 274, May (2000), Williamsburg, VA.

  16. B. Laikhtman, S. Luryi, G. Belenky, “Lateral current injection laser based on type II material system" 25th International Conference on the Physics of Semiconductors, September 17-22, (2000), Osaka, Japan.

  17. G.L. Belenky, D.Z. Garbuzov, D.V. Donetsky, H. Lee, R.U. Martinelli, J.C. Connolly, “Optical gain and loss 2.3-2.5 µm InGaAsSb/AlGaAsSb QW broad-area and ridge-waveguide lasers," Conference on Lasers and Electro-Optics Europe, 2000 (CLEO/Europe’00), September 10-15, (2000), Nice, France.

  18. M. Kisin, M.A. Stroscio, G. Belenky, S. Luryi, “Interband tunneling in InAs/GaSb type-II cascade structure," Int. Semicond. Laser Conference, 2000 (ISLC’00), pp. 67, September 25-28, (2000), Monterey, CA.

  19. D.V. Donetsky, D. Westerfeld, G.L. Belenky, R.U. Martinelli, D.Z. Garbuzov, M. Maiorov, J.C. Connolly, “2.2-2.5µm InGaAsSb/AlGaAsSb QW diode laser with extraordinarily wide (?? = 300 nm) optical gain spectrum,” Conference on Lasers and Electro-Optics, 2001 (CLEO’01), pp. 193, May 6-11 (2001), Baltimore, MD.

  20. L. Shterengas, G. Belenky, C.L. Reynolds, M.S. Hybertsen, M. Focht, L. Smith, L. Peticolas, D. Stampone, “Effect of the lateral carrier leakage on performance of 1.3 µm InGaAsP MQW CMBH lasers," Conference on Lasers and Electro-Optics, 2001 (CLEO’01), pp. 207, May 6-11 (2001), Baltimore MD.

  21. M.V. Kisin, M.A.Stroscio, G.Belenky, S.Luryi, “Interband Phonon Assisted Tunneling in InAs-GaSb Heterostructures,” 10th Int. Conference on Phonon Scattering in Condensed Matter, August 12-17 (2001), Dartmouth College, Hanover, NH.

  22. M.V. Kisin, M.A. Stroscio, G. Belenky, S. Luryi, “Intersubband Phonon Assisted Transitions in type-II InAs-GaSb Heterostructures," 6th Int. Conference on Intersubband Transitions in Quantum Wells, September 10-14 (2001), Asilomar, California.

  23. L. Shterengas, J.G. Kim, G. Belenky, R. Martinelli, “Progress in type-I In(Al)GaAsSb/GaSb diode lasers with ? > 2.5 µm," Conference on Lasers and Electro-Optics, 2003, (CLEO’03), June 1-6 (2003), Baltimore, MD.

  24. R.U. Martinelli, J.G. Kim, G.L. Belenky, L. Shterengas, “Design and performance of AlGaAsSb/InGaAsSb/GaSb type-I quantum well diode lasers (invited talk)," Conference on Lasers and Electro-Optics, 2003 (CLEO’03) , June 1-6 (2003), Baltimore, MD.

  25. R.U. Martinelli, G. Belenky, J.G. Kim, L. Shterengas, “Type-I QW In(Al)GaAsSb/GaSb diode lasers with ? = 2.8 ?m,” Solid State and Diode laser Technology Review (SSDLTR), May 20-22 (2003), Albuquerque, NM.

  26. G. Belenky, A. Gourevitch, D. Donetsky, D. Westerfeld, C.W. Trussell, H. An, Z. Shellenbarger, R. Martinelli, “High power 1.5 ?m InGaAsP-InP diode laser arrays,” Solid State and Diode laser Technology Review (SSDLTR), pp. 10, May 20-22 (2003), Albuquerque, NM.

  27. J.G. Kim, L. Shterengas, G. Belenky, R. Martinelli, “High-Power Room-Temperature Continuous Operation of Molecular Beam Epitaxy Grown Type-I In(Al)GaAsSb/GaSb Diode Lasers at ? = 2.7 and 2.8 ?m,” 11th Int. Conference on Narrow Gap Semicond. (NGS-11), June 16-20 (2003), Buffalo, NY.

  28. G. Belenky, L. Shterengas, “What is the wavelength limit for operation of type-I electrically pumped heterolasers?,” Advanced Research Workshop Future Trends in Microelectronics: The Nano, the Giga, the Ultra, and the Bio, June 23-27 (2003), Corsica, France

  29. M.V. Kisin, S.D. Suchalkin, J.D. Bruno, G. Belenky, S. Luryi, “Analysis of High-Temperature Continuous Wave Operation of Type-II Interband Cascade Lasers,” 30th Int. Symposium on Compound Semiconductors, August 25-27 (2003), San Diego, CA.

  30. G.L. Belenky, L. Shterengas, J.G. Kim, R.U. Martinelli, “Recent performance advances in type I GaSb based lasers,” 6th International Conference on Mid-Infrared Optoelectronics Materials and Devices, June 28-July 1 (2004), St. Petersburg, Russia.

  31. S. Anikeev, D. Donetsky, G. Belenky, S. Luryi, C.A. Wang, D.A. Shiau, M. Dashiell, J. Beausang, G. Nichols, “Static and dynamic measurements of recombination lifetime in narrow-gap GaInAsSb lattice matched to GaSb," 6th International Conference on Mid-Infrared Optoelectronics Materials and Devices (MIOMD) June 28-July 1 (2004), St. Petersburg, Russia.

  32. L. Shterengas, G.L. Belenky, J.G. Kim, R.U. Martinelli, “Design of High-Power Room-Temperature CW GaSb-based Type-I QW Lasers with ? > 2.5 µm”, 205th Electrochemical Society Meeting, May 9-13 (2004), San Antonio, TX.

  33. J.G. Kim, R.U. Martinelli, L. Shterengas, G.L. Belenky, “High-power room-temperature continuous operation of type-I In(Al)GaAsSb/GaSb diode lasers at wavelength over 2.5 µm,” SPIE Photonics West, January (2004), San Jose, CA.

  34. L. Shterengas, J.-Y. Yeh, L.J. Mawst, N. Tansu, G. Belenky, “Linewidth-enhancement factors of InGaAs and InGaAsN single quantum-well diode lasers,” Conference on Lasers and Electro-Optics, 2004 (CLEO’04), May 16-21 (2004), San Francisco, CA.

  35. A. Gourevitch, D. Donetsky, G. Belenky, B. Laikhtman, D. Westerfeld, Z. Shellenbarger, H. An, R.U. Martinelli, C.W. Trussell, “Transient thermal analysis of 1.47 µm high power diode laser arrays,” Solid State and Diode laser Technology Review (SSDLTR), June (2004), Albuquerque, NM

  36. G. Belenky, L. Shterengas, A. Gourevitch, D. Donetsky, J. Kim, R. U. Martinelli, D. Westerfeld, Solid State and Diode laser Technology Review (SSDLTR), June (2004), Albuquerque, NM.

  37. M.V. Kisin, G. Belenky, S. Luriy, “Enhancement of the Phonon Depopulation in Intersubband Cascade Lasers”. Int. Workshop on Quantum Cascade Lasers (QCL), January 4-8 (2004), Seville, Spain.

  38. S. Anikeev, D. Donetsky, G. Belenky and S. Luryi, C.A. Wang, D.A. Shiau, M. Dashiell, J. Beausang, G. Nichols, “Effects of radiative recombination and photon recycling on minority-carrier lifetime in epitaxial GaInAsSb lattice-matched to GaSb," 12th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE), Lahaina, May 30-June 4 (2004), Lahaina, Maui, HI.

  39. D. Donetsky, S. Anikeev, N. Gu, G. Belenky, S. Luryi, C.A. Wang, D.A. Shiau, M. Dashiell, J. Beausang, G. Nichols, “Analysis of recombination processes in 0.5-0.6 eV epitaxial GaInAsSb lattice-matched to GaSb", 6th Conference on Thermophotovoltaic Generation of Electricity (TPV6), June 14-16 (2004), Freiburg, Germany.

  40. C. Wang, R. Huang, M. Connors, D. Shiau, P. Murphy, P. O’Brien, D. Donetsky, S. Anikeev, G. Belenky, D. Depoy, G. Nichols, “Wafer-bonding and epitaxial transfer of GaInAsSb/GaSb to GaAs substrates for monolithic series interconnection of Thermophotovoltaic cells,” 6th Conference on Thermophotovoltaic Generation of Electricity (TPV6), June 14-16 (2004), Freiburg, Germany.

  41. D. Donetsky, S. Anikeev, G. Belenky, S. Luryi, C.A. Wang, D.A. Shiau, M. Dashiell, J. Beausang, G. Nichols, “Measurements of recombination rates in low-doped epitaxial GaInAsSb lattice-matched to GaSb by frequency response of photoluminescence,” 46th Electronic Materials Conference (EMC), June 20-25 (2004) Notre Dame University, Notre Dame, IN.

  42. G.L. Belenky, J.G. Kim, L. Shterengas, R.U. Martinelli, “Mid-IR room temperature operated GaSb-based lasers and laser arrays,” 17th Annual Meeting of the IEEE Laser and Electro-Optics Society, 2004 (LEOS’04), November 7-11 (2004), Rio Grande, Puerto Rico.

  43. G. Belenky, S. Suchalkin, S. Luryi, L. Shterengas, J. Bruno, R. Tober, R.U. Martinelli, J.G. Kim, “2 µm - 5 µm GaSb based emitters for free space communications. Challenges and limitations,” SPIE International Symposium “Information Technology and Communication”, October 25-28 (2004), Philadelphia, PA.

  44. S. Suchalkin, M.V. Kisin, G. Belenky, S. Luryi, Y. Vasilyev, J. Bruno, F. Towner, R. Tober, “Electrically Tunable Cascaded mid-IR Type II Light Source", SPIE Photonics West, January 21 (2004), San Jose, CA.

  45. M.V. Kisin, G. Belenky, S. Luriy, “Enhancement of the phonon depopulation in intersubband cascade lasers,” Int. Workshop on Quantum Cascade Lasers (QCL), January 4-8 (2004), Seville, Spain.

  46. M.V. Kisin, S. Suchalkin, G. Belenky, “Stark effect tunable QCL,” 8th International Conference on Intersubband Transitions in Quantum Wells (ITQW’05), September 11-16 (2005), North Falmouth, MA.

  47. L. Shterengas, G. Belenky, J.G. Kim, A. Gourevitch, D. Donetsky, D. Westerfeld, R. Martinelli, “Effect of compressive strain on differential gain of GaSb-based type-I QW lasers,” Conference on Lasers and Electro-Optics, 2006 (CLEO’06), May 21-26 (2006) Long Beach, CA.

  48. L. Shterengas, A. Ongstad, R. Kaspi, S. Suchalkin, G. Belenky, M. Kisin, D. Donetsky, “Carrier Capture in InGaAsSb/InAs/InGaSb Type-II QW Laser Heterostructures,” Conference on Lasers and Electro-Optics, 2006 (CLEO’06), May 21-26 (2006) Long Beach, CA.

  49. J.G. Kim, H. An, L. Shterengas, R.U. Martinelli, G.L. Belenky, “Development of high-power room-temperature continuous wave operation of 2.0-2.8 µm type-I In(Al)GaAsSb/GaSb diode lasers,” 2nd Symposium on Infrared Materials and Technologies, November 21-22 (2005), The Penn State Conference Center Hotel, State College, PA.

  50. L. Shterengas, A. Ongstad, R. Kaspi, S. Suchalkin, G. Belenky, M. Kisin, D. Donetsky, “Carrier Capture in InGaAsSb/InAs/InGaSb Type-II QW Laser Heterostructures,” Conference on Lasers and Electro-Optics, 2006 (CLEO’06), May 21-26 (2006), Long Beach, CA.

  51. D. Donetsky, L. Shterengas, G. Kim, G. Belenky, A. Gourevitch, D. Westerfeld, R. Martinelli, “Carrier Recombination Kinetics in 2.3-2.4 µm InGaAsSb/AlGaAsSb QW Laser Heterostructures,” 48th Electronic Materials Conference (EMC), June 28-30 (2006) Pennsylvania State University, State College, PA.

  52. L. Shterengas, A. Ongstad, R. Kaspi, S. Suchalkin, G. Belenky, M. Kisin, D. Donetsky, “Electron and Hole Energy Relaxation in InGaAsSb/InAs/InGaSb Type-II QW Laser Heterostructures”, 48th Electronic Materials Conference (EMC), June 28-30 (2006) Pennsylvania State University, State College, PA.

  53. M. V. Kisin, L. Shterengas, J.G. Kim, G. Belenky, “Enhancement of Optical Gain in Sb-based MIR Diode Lasers”, IEEE 21st Int. Semiconductor Laser Conference (ISLC), September 18-21 (2006), Kohala Coast, HI.

  54. J. G. Kim, H. An, L. Shterengas, R.U. Martinelli, G.L. Belenky, “Development of high-power room-temperature continuous wave operation of 2.0-2.8um type-I In(Al)GaAsSb/GaSb diode lasers,” 2nd Symposium on Infrared Materials and Technologies, November 21-22 (2005), The Penn State Conference Center Hotel, State College, PA.

  55. S.D. Suchalkin, M.V. Kisin, S. Luryi, G. Belenky, J. Bruno, F.J. Towner, C. Monroy, R. Tober, “Electrically Tunable Interband Cascade Laser (invited paper),” SPIE Optics East, October 1-4 (2006), Boston, MA.

  56. S.D. Suchalkin, M.V. Kisin, S. Luryi, G. Belenky, J. Bruno, F.J. Towner, , R. Tober, “Widely tunable type II interband cascade laser," Advanced Research Workshop Future Trends in Microelectronics: Up the Nano Creek, June 26-30 (2006), Crete, Greece.

  57. M.V. Kisin, S.D. Suchalkin, S. Luryi, G. Belenky, J. Bruno, F.J. Towner, R. Tober, “Electrically Tunable Cascade Laser,” 2nd International Workshop on Quantum Cascade Lasers (QCL), September 6-9 (2006), Brindizi, Italy.

  58. L. Shterengas, G. Belenky, M.V. Kisin, D. Donetsky, D. Westerfeld, “High power 2.4 µm Type-I QW GaSb-based diode lasers with enhanced differential gain,” 7th International Conference on Mid-Infrared Optoelectronics Materials and Devices (MIOMD), May (2007), Bad Ischl, Austria.

  59. L. Shterengas, G. Belenky, M. Kisin, D. Donetsky, D. Westerfeld, “Recent developments in high power 2.3-2.4 µm diode lasers”, SPIE Defense and Security Symposium, April (2007), Orlando, FL.

  60. G. Belenky, L. Shterengas, D. Donetsky, M.V. Kisin, “Advances in Mid-Infrared GaSb-based Lasers,” 1st International Conference on Materials and Information Sciences in High Technologies (MISHE’07), September. 26-29 (2007), Baku, Azerbaijan.

  61. L.E. Vorobjev, V.L. Zerova, D.A. Firsov, V.A. Shalygin, M.Ya. Vinnichenko, V.Yu. Panevin, T. Paphavy, K.S. Borchev, A.E. Zhukov, Z.N. Sokolova, I.S. Tarasov, G. Belenky, “Electroluminescence of hot carriers in laser nanostructures under spontaneous - and stimulated - emission conditions and absorption of IR-radiation by hot electrons in quantum wells,” XII International Symposium on Nanophotonics and Nanoelectronics, pp. 173 (in Russian) March 10-14 (2008), Nizny Novgorod, Russia.

  62. S. Suchalkin, D. Westerfeld, S. Jung, G. Kipshidze, L. Shterengas, T. Hosoda, G. Belenky, “Room temperature operated GaSb-based type I light-emitting diodes,” SPIE Defence and Security, March 17-18 (2008), Orlando, FL.

  63. L.Shterengas, G. Kipshidze, T. Hosoda, D. Donetsky, G. Belenky, “Room Temperature Operated 3.1-µm type-I GaSb-based diode lasers with 80 mW continuous wave output power,” Conference on Lasers and Electro-Optics, 2008 (CLEO’08), May 4-9 (2008) San Jose, CA.

  64. G. Belenky, L. Shterengas, G. Kipshidze, T. Hosoda, S. Suchalkin, “Advances in the development of the GaSb-based laser diodes operating within spectral range of 2-3.5 µm,” 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2008 (LEOS’08), November 9-13 (2008), Newport Beach, CA.

  65. G. Belenky, G. Kipshidze, L. Shterengas, D. Donetsky, T. Hosoda, J. Chen, S. Suchalkin, “GaSb based lasers operating within spectral range above 2 µm,” SPIE Photonics West, January 24-29 (2009), San Jose, CA.

  66. G. Belenky, L. Shterengas, G. Kipshidze, T. Hosoda, J. Chen, S. Suchalkin, “GaSb-based Laser diodes operating within spectral range of 2-3.5 µm,” Conference on Lasers and Electro-Optics, 2009 (CLEO’09), May 31-June 5 (2009), Baltimore, MD.

  67. J. Chen, G. Kipshidze, L. Shterengas, T. Hosoda, Y. Wang, D. Donetsky, G. Belenky, “2.7 µm GaSb Based Diode Lasers With Quinary Waveguide,” 51st Electronic Materials Conference (EMC), June 24-26 (2009), University Park, PA

  68. T. Hosoda, G. Kipshidze, L. Shterengas, D. Westerfeld, S. Suchalkin, G. Belenky, “3 µm Type-I GaSb-based diode lasers operating at room temperature in CW mode,” 26th North American Molecular Beam Epitaxy Conference (NAMBE), August 9-12 (2009), Princeton, NJ.

  69. G. Belenky, G. Kipshidze, T. Hosoda, J. Chen, D. Wang, L. Shterengas, “GaSb-based laser operating within the spectra range of 2-3 µm,” Advanced Workshop on Frontiers in Electronics (WOFE 09), December 13-16 (2009), Rincon, Puerto Rico.

  70. A. Soibel, C. Frez, A. Ksendzov, Y. Qiu, S. Forouhar, J. Chen, T. Hosoda, G. Kipshidze, L. Shterengas, G. Tsvid, G. Belenky, “3.0-3.5µm single spatial mode diode lasers operating at room temperature,” Conference on Lasers and Electro Optics, 2010 (CLEO 2010), May 16-21 (2010), San Jose, CA.

  71. T. Hosoda, J. Chen, G. Tsvid, G. Kipshidze, S. Suchalkin, L. Shterengas and G. Belenky, “Diode Lasers Operating at Room Temperature in 2-3.5 µm Spectral Region”, SPIE Defense, Security and Sensing, April 5-9 (2010), Orlando, FL.

  72. S. Svensson, D. Donetsky, D. Wang, P. Maloney, G. Belenky, “Carrier Lifetime Measurement in InAs/GaSb Strained Layer Superlattice Structures,” SPIE Defense Security and Sensing, April 5-9 (2010), Orlando, FL.

  73. G. Belenky, L. Shterengas, G. Kipshidze, “GaSb-based laser diodes operating within the spectra range of 2-3.5 µm,“ 22nd IEEE Int. Semicond. Laser Conference, 2010 (ISLC’10), pp. 45, September 26-30, (2010), Kyoto, Japan.

  74. L. Shterengas, G. Kipshidze, T. Hosoda, G. Tsvid, G. Belenky, “Diode Lasers Emitting above 3 µm at Room Temperature with more than 100 mW of Continuous Wave Output Power,” SPIE Photonics West, January 23-28 (2010), San Fransisco, CA.

  75. S. Jung, S. Suchalkin, G. Kipshidze, G. Belenky, “GaSb Based Mid-Infrared Type I Quantum Well Dual Wavelength LEDs and LED Arrays,” MIRTHE-IROn-SensorCAT Virtual Conference, January 19-20 (2011).

  76. G. Tsvid, A. Soibel, T. Hosoda, J. Chen, G. Kipshidze, L. Shterengas, C. F. Frez, S. Forouhar, G. Belenky, “Type-I GaSb based diode single lateral mode lasers operating at room temperature in 3.1-3.2 µm spectral region," SPIE Photonics West, January 22-27 (2011), San Francisco, CA.

  77. G. Belenky, L. Shterengas, G. Kipshidze, T. Hosoda, J. Chen, “Advances in the development of type-I quantum well GaSb-based diode lasers," SPIE Photonics West, January 22-27 (2011), San Francisco, CA.

  78. S. Forouhar, C. Frez, A. Ksendzov, Y. Qiu, K. J. Franz, A. Soibel, J. Chen, T. Hosoda, G. Kipshidze, L. Shterengas, G. Belenky, “Low power consumption lasers for next generation miniature optical spectrometers for trace gas analysis," SPIE Photonics West, January 22-27 (2011), San Francisco, CA.

  79. G. Belenky, G. Kipshidze, S. Svensson, W. Sarney, H. Heir, L. Shterengas, D. Donetsky, D. Wang, Y. Lin, “Carrier Recombination in GaSb/InAs SLS and InAsSb,” SPIE Defense, Security and Sensing, April 25-29 (2011), Orlando, FL.

  80. K. Franz, C. Frez, J. Chen, Y Qiu, D. V. Freilich, L. Sterengas, G. L. Belenky, S. Forouhar, “GaSb-based high-power single-spatial-mode lasers at 2.0 µm”, Conference on Laser and Electro-Optics (CLEO), May (2011)

  81. S. Suchalkin, M. Jang, S. Jung, R. L. Tober, M. A. Belkin, G. Belenky, “Fast electrical wavelength modulation of mid-infrared quantum cascade lasers”, Conference on Laser and Electro-Optics (CLEO), May (2011)

  82. D. Wang, S. Svensson, L. Shterengas, G. Belenky, “Band Edge Optical Transitions in Bulk GaSbN and InAsN Dilute-Nitride Materials,” 53rd Electronic Materials Conference (EMC), June 22-24 (2011), Santa Barbara, CA.

  83. D. Wang, D. Donetsky, S. Svensson, S. Suchalkin, G. Kipshidze, G. Belenky, A. Liu, J. Fastenau, D. Lubyshev, “Study of Carrier Lifetime and Background Carrier Concentration in GaSb/InAs Strained-Layer Superlattices and Bulk Epitaxial Layers by Optical Modulation Response,” 53rd Electronic Materials Conference (EMC), June 22-24 (2011), Santa Barbara, CA.

  84. S. Jung, S. Suchalkin, G. Kipshidze, L. Shterengas, G. Belenky, “Wet Etching Technique for Fabrication of GaSb Based Mid Infrared Single Lateral Mode Lasers,” 53rd Electronic Materials Conference (EMC), June 22-24 (2011), Santa Barbara, CA.

  85. W. L. Sarney, S. P. Svensson, H. Hier, D. Wang, D. Donetsky, and G. Belenky, “The Effect of Bi on the Growth and Performance of Type II Strained Layer Superlattices for IR Photodetectors”, 2nd Int. Workshop on Bismuth Containing Semiconductors, July 18-20 (2011), Univ. of Surrey, UK.

  86. S. P. Svensson, W. L. Sarney, H. Hier, and G. Belenky, “The Prospects for Use of Highly Mismatched Alloys in Long-Wavelength Infrared Detectors”, 2nd Int. Workshop on Bismuth Containing Semiconductors (Invited), July 18-20 (2011), Univ. of Surrey, UK.

  87. W. L. Sarney, S. P. Svensson, H. Hier, G. Belenky, “New Approaches to Bulk, Direct Bandgap III-V Materials for Long-Wavelength Infrared (LWIR) Detector Applications”, 15th Int. Conf. on Narrow Gap Systems, August 1-5 (2011), Blacksburg, VA.

  88. D. Donetsky, L. Shterengas, G. Kipshidze, D. Wang, G. Belenky, W. Sarney1, H. Hier1, S. P. Svensson, “Recombination and optical properties of unrelaxed InAsSb grown by MBE on GaSb and InSb substrates”, 15th Int. Conf. on Narrow Gap Systems, August 1-5 (2011), Blacksburg, VA.

  89. S. P. Svensson, H. Hier, W.L. Sarney, D. Donetsky, D. Wang, and G. Belenky, “Dilute N and Bi III-V Alloys for Long Wavelength Infrared Detector Applications”, 28th North American MBE Conference, August 14-17 (2011), San Diego, CA.

  90. W. L. Sarney, G. Kipshidze, H. Hier, D. Donetsky, D. Wang, L. Shterengas, S. P. Svensson, and G. Belenky, “Structural and Luminescent Properties of Bulk InAs(X) Sb(1-X)”, 28th North American MBE Conference, August 14-17 (2011), San Diego, CA.

  91. G. Belenky, D. Wang, D. Donetsky, G. Kipshidze, L. Shterengas, W.L. Sarney, S. P. Svensson, “Properties of unrelaxed InAs1-XSbX alloys grown on compositionally graded buffers”, Workshop on Frontier Elec. (WOFE), December 18-21 (2011), San Juan, Puerto Rico.

  92. D. Donetsky, G. Belenky, D. Wang, Y. Lin, L. Shterengas, G. Kipshidze, W. L. Sarney, H. Hier, S. P. Svensson, “Unrelaxed bulk InAsSb with novel absorption, carrier transport and recombination properties for MWIR and LWIR photodetectors”, SPIE Conf. Defense Security and Sensing, April 23-27 (2012) Baltimore, MD.

  93. D. Wang, D. Donetsky, Y. Lin, G. Kipshidze, L. Shterengas, G. Belenky, W. L. Sarny and S. P. Svensson, “InAs1-XSbX alloys grown on compositionally graded buffers”, CoS3 Spring Workshop, April 13 (2012), Princeton, NJ.

  94. Y. Lin, D. Wang, D. Donetsky, L. Shterengas, G. Kipshidze, G. Belenky, W. L.Sarney, H. Hier, S. P. Svensson "Properties of epitaxial InAsSb layer on compositionally-graded metamorphic buffers" 54th Electronic Materials Conference (EMC), June 20-22 (2012), State College, PA.

  95. G. Belenky, L. Shterengas, G. Kipshidze, D. Donetsky, D. Wang, T. Hosoda, W. L. Sarney, S. P. Svensson, “Metamorphic antimonides for infrared photonics” (Invited), MIOMD-XI, Sept 4-8, (2012), Chicago, IL.

  96. L. Sheterengas, G. Kipshidze, T. Hosoda, R. Liang, S. Jung, D. Westerfield, G. Belenky, “Diode Lasers operating in spectral range from 1.9 to 3.5 µm”, 23rd IEEE International Semiconductor Laser Conference 2012, San Diego, CA.

  97. D. Wang, Y. Lin, D. Donetsky, G. Kipshidze, L. Shterengas, G. Belenky, S. P Svensson, W. L Sarney, H. Hier “Infrared emitters and photodetectors with InAsSb bulk active region” SPIE Conf. Defense Security and Sensing, April 29-May 3 (2013) Baltimore, MD.

  98. S. Suchalkin, S. Jung, M. Jang, T. Hosoda, R. L. Tober, M. A. Belkin, G. Belenky,“Frequency-modulated Quantum Cascade Laser For Free Space Data Links”, invited talk on Photonics West 2013, San-Francisco, CA.

  99. R. Liang, T. Hosoda, G. Kipshidze, L. Shterengas, G. Belenky “3 µm GaSb-based Type-I Quantum-well Diode Lasers with Cascade Pumping Scheme” talk on CLEO: Science and Innovations 2013, San Jose, CA.


Last modified: October 3, 2013