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1.5um InGaAsP/InP MQW high power lasers

Design approach combining broadened waveguide with p-doping profile optimization is applied to 1.5µm InGaAsP/InP MQW lasers. Broad area 1.5µm InGaAsP/InP multiple quantum well (MQW) broadened-waveguide lasers with three different p-cladding doping profiles were studied. Devices containing higher Zn concentration in the vicinity of p-cladding/SCH interface yielded maximum output optical power density giving more than 16W in peak from 100µm aperture.