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2-2.6µm In(Al)GaAsSb MQW lasers

Type-I MQW In (Al)GaAsSb/GaSb lasers operating at room temperature within spectra range 2.-2.6um were developed. A new approach in the design led to continuous-wave output powers more than 400mW from broad area devices and more than 10mW from ridge lasers. Choice of the design allows to fabricating lasers with a wide optical gain spectrum (full width at half maximum about 350 nm) suitable for development of devices with a wide tuning range.