|Spectral Analysis of Electroluminescence from SiGe Heterojunction Bipolar Transistor for device and failure analysis applications|
This research is performed at the Optoelectronics lab under the Joint Study Agreement between ECE Department at Stony Brook University and IBM T. J. Watson Research Center at Yorktown Heights, NY.
In this project the spectra of electroluminescence from SiGe Hetrojunction Bipolar Transistors (HBT) at all modes of device operation are investigated. These results complement the research at IBM T. J. Watson Research Center where the light emission from SiGe HBTs is studied to develop the applications of Photon Emission Microscopy, particularly, IBM patented PICA (Picosecond Imaging Circuit Analysis), to R&D, design and failure analysis of SiGe devices and circuits.
IBM has pioneered the SiGe technology for the semiconductor devices and holds a leadership in the SiGe market, todays fastest growing process technology. The Picosecond Imaging Circuit Analysis, another IBMs invention, is becoming an industry standard tool for optimization and failure analysis.
Figure 1 and Figure 2 show the front and the back side emission and layout overlay correspondingly.