High power CW room temperature
operated GaSb-based type-I MQW diode lasers
Type-I MQW In(Al)GaAsSb/GaSb lasers operating at room temperature
within spectra range 2-2.8µm were developed.
A new approach in the design led to high power continuous-wave operation
of broad area and ridge lasers.
1W of CW optical power from 100μm aperture device was achieved at
500mW and 160mW were demonstrated at 2.7μm and 2.8μm, correspondingly.
In short pulse mode 5W peak power was obtained at 2.5μm and above
2W at 2.7 and 2.8μm. (Figure 2)