Paper 134 Abstract

[ Full text: download 134.pdf, 75 Kb ]

Appl. Phys. Lett. 66, pp. 1376-1378 (1995)

Hot electron luminescence in In0.53Ga0.47As transistor channel

M. Mastrapasqua, G. Berthold, C. Canali, S. Luryi, E. Zanoni, M. Manfredi, D. L. Sivco, and A. Y. Cho


We report measurements of light emission, in the 1.1-2.5 eV energy range, by hot electrons in the In0.53Ga0.47As channel of a complementary charge injection transistor. By comparing electrical characteristics and light emission we are able to identify the intra-conduction band transitions as the main light emission mechanism. Hot-electron effective temperatures up to 2200 K have been determined from high energy exponential tails of the electroluminescence spectra.

Return to [ 1994-96 Publication Record] home page

Return to the [Publication Record] home page

Return to the [Serge Luryi's] home page

Return to the [Faculty] Home Page

Return to the [EE Department] home page

Serge Luryi,, +1.516.632.8420; Fax: +1.516.632.8494