Paper 134 Abstract

Appl. Phys. Lett. 66, pp. 1376-1378 (1995)

Hot electron luminescence in In0.53Ga0.47As transistor channel

M. Mastrapasqua, G. Berthold, C. Canali, S. Luryi, E. Zanoni, M. Manfredi, D. L. Sivco, and A. Y. Cho

Abstract

We report measurements of light emission, in the 1.1-2.5 eV energy range, by hot electrons in the In0.53Ga0.47As channel of a complementary charge injection transistor. By comparing electrical characteristics and light emission we are able to identify the intra-conduction band transitions as the main light emission mechanism. Hot-electron effective temperatures up to 2200 K have been determined from high energy exponential tails of the electroluminescence spectra.

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Serge Luryi, sluryi@sbee.sunysb.edu, +1.516.632.8420; Fax: +1.516.632.8494