Here provided is a list of our recent (2006 onward) publications including books, journal articles, conference proceedings, and presentations.

 • Books

 • Future Trends in Microelectronics: Reflections on the Road to Nanotechnology (1996) [ISBN 0-7923-4169-4]
 • Future Trends in Microelectronics: The Road Ahead (1999) [ISBN 0-471-32183-4]
 • Frontiers in Electronics: From Materials to Systems (2000) [ISBN 981-02-4361-8]

 • Journal Articles & Conference Proceedings (selected in reverse chronological order)

 • T. Feng, T. Hosoda, L. Shterengas, G. Kipshidze, A. Stein, M. Lu, and G. Belenky, "Laterally coupled distributed feedback type-I quantum well cascade diode lasers emitting near 3.22  μm," Appl. Opt. 56, H74-H80 (2017).

 • L. Shterengas, G. Kiphshidze, T. Hosoda, R. Liang, T. Feng, M. Wang, A. Stein, G. Belenky, "Cascade Pumping of 1.9-3.3 μm Type-I Quantum Well GaSb-Based Diode Lasers," J. Sel. Top. Quant. Electron., 23, 16921011 (2017).

 • W. L. Sarney, S. P. Svensson, Y. Xu, D. Donetsky, and G. Belenky, ''Bulk InAsSb with 0.1eV bandgap on GaAs,'' J. Appl. Phys., 122, 025705 (2017).

 • S. Suchalkin, G. Belenky, L. Shterengas, B. Laykhtman, G. Kipshidze, M. Ermolaev, D. Smirnov, J. Ludwig, S. Moon, D. Graf, S.P. Svensson, W.L. Sarney, ''Properties of novel metamorphic III-V materials with ultra-low bandgaps,'' Proc. SPIE, 10111, 101112U (2017).

 • L. Shterengas, T. Hosoda, M. Wang, T. Feng, G. Kipshidze, G. Belenky, ''High-power 1.9-3.3 μm type-I quantum-well cascade diode lasers,'' Proc. SPIE, 10123, 101230P (2017).

 • S. P. Svensson, W. L. Sarney, D. Donetsky, G. Kipshidze, Y. Lin, L. Shterengas, Y. Xu, G. Belenky, ''Materials design parameters for infrared device applications based on III-V semiconductors,'' Appl. Opt., 56, B58 (2017).

 • T. Feng, T. Hosoda, L. Shterengas, S. Aaron, G. Kipshidze, G. Belenky, ''Two-step narrow ridge cascade diode lasers emitting near 2 μm,'' Photon. Technol. Lett., 29, 485 (2017).

 • M. Wang, T. Hosoda, L. Shterengas, G. Kipshidze, D. J. Hwang, G. Belenky, ''Narrow ridge GaSb-based cascade diode lasers fabricated by methane-hydrogen reactive ion etching,'' Electron. Lett., 53, 40 (2016).

 • L. Shterengas, G. Kipshidze, T. Hosoda, M. Wang, T. Feng, G. Belenky, ''Cascade type-I quantum well GaSb-based diode lasers,'' Photonics, 3, 27 (2016).

 • T. Hosoda, M. Fradet, C. Frez, L. Shterengas, S. Sander, S. Forouhar, G. Belenky, ''Laterally coupled distributed feedback cascade diode lasers emitting near 2.9 μm,'' Electron. Lett., 52, 857 (2016).

 • T. Hosoda, T. Feng, L. Shterengas, G. Kipshidze, G. Belenky, ''High power cascade diode lasers emitting near 2 μm,'' Appl. Phys. Lett., 108, 131109 (2016).

 • L. Shterengas, T. Hosoda, M. Wang, T. Feng, G. Kipshidze, G. Belenky, ''Type-I QW cascade diode lasers for spectral region above 3 μm,'' Proc. SPIE, 9767, 976703 (2016).

 • M. Fradet, T. Hosoda, C. Frez, L. Shterengas, S. Sander, S. Forouhar, G. Belenky, ''First demonstration of single-mode distributed feedback type-I GaSb cascade diode laser emitting near 2.9 μm,'' Proc. SPIE, 9767, 97670U (2016).

 • S. Suchalkin, J. Ludwig, G. Belenky, B. Laikhtman, G. Kipshidze, Y. Lin, L. Shterengas, D. Smirnov, S. Luryi, W.L. Sarney, S.P. Svensson, ''Electronic properties of unstrained unrelaxed narrow gap InAsxSb1-x alloys,'' J. Phys. D: Appl. Phys., 49, 105101 (2016).

 • G. Belenky, Y. Lin, L. Shterengas, D. Donetsky, G. Kipshidze, S. Suchalkin, "Lattice parameter engineering for III-V long wave infrared photonics," Electron. Lett., 51, 1521 (2015).

 • L. Shterengas, R. Liang, T. Hosoda, G. Kipshidze, G. Belenky, S. S Bowman, R. L Tober, "Type-I QW cascade diode lasers with 830 mW of CW power at 3 μm," Proc. SPIE OPTO 9382, 93820X (2015).

 • Y. Lin, S. Suchalkin, G. Kipshidze, T. Hosoda, B. Laikhtman, D. Westerfeld, L. Shterengas, G. Belenky, "Effect of hole transport on performance of infrared type-II superlattice light emitting diodes," J. Appl. Phys. 117, 165701 (2015).

 • R. Liang, T. Hosoda, L. Shterengas, A. Stein, M. Lu, G. Kipshidze, G. Belenky, "Narrow ridge λ≈3 μm cascade diode lasers with output power above 100mW at room temperature," IEEE Photon. Technol. Lett., 27, 2425 (2015).

 • Y. Lin, D. Donetsky, D. Wang, D. Westerfeld, G. Kipshidze, L. Shterengas, W. L Sarney, S. P Svensson, G. Belenky, "Development of bulk InAsSb alloys and barrier heterostructures for long-wave infrared detectors," J. Electron. Mater., 44, 3360 (2015).

 • T. Hosoda, M. Wang, L. Shterengas, G. Kipshidze, G. Belenky, "Three stage cascade diode lasers generating 500 mW near 3.2 μm," Appl. Phys. Lett., 107, 111106 (2015).

 • S. P. Svensson, F. J. Crowne, H. S. Hier, W. L. Sarney, W. A. Beck, Y. Lin, D. Donetsky, S. Suchalkin, G. Belenky, "Background and interface electron populations in InAs0.58Sb0.42," Semicond. Sci. Technol., 30, 035018, (2015).

 • W. L. Sarney, S. P. Svensson, D. Wang, D. Donetsky, G. Kipshidze, L. Shterengas, Y. Lin, G. Belenky, "AlInAsSb for M-LWIR detectors," J. Cryst. Growth., 452, 357 (2015).

 • B Laikhtman, S Suchalkin, D Westerfeld, G Belenky, "Nonuniform radiative recombination in n- i- p LED," J. Phys. D., 48, 045106 (2015).

 • Y. Lin, D. Wang, D. Donetsky, G. Kipshidze, L. Shterengas, L. E. Vorobjev, G. Belenky, "Transport properties of holes in bulk InAsSb and performance of barrier long-wavelength infrared detectors," Semicond. Sci. Technol., 29, 112002 (2014).

 • Y. Lin, D. Wang, D. Donetsky, G. Kipshidze, L. Shterengas, G. Belenky, W. L. Sarney, S. P. Svensson, "Structural and Optical Characteristics of Metamorphic Bulk InAsSb," Int. J. High Speed Electron. Syst., 23, 1450021 (2014).

 • Y. Lin, D. Wang, D. Donetsky, G. Belenky, H. Hier, W. L. Sarney, S. P. Svensson, "Minority Carrier Lifetime in Beryllium-Doped InAs/InAsSb Strained Layer Superlattices," J. Eletron. Mater., 43, 3184 (2014).

 • R. Liang, G. Kipshidze, T. Hosoda, L. Shterengas, G. Belenky, "3.3--3.4-mum Diode Lasers Based on Triple-Layer GaInAsSb Quantum Wells," IEEE Photon. Technol. Lett., 26, 664 (2014).

 • R. Liang, T. Hosoda, L. Shterengas, A. Stein, M. Lu, G. Kipshidze, G. Belenky, "Distributed feedback 3.27 μm diode lasers with continuous-wave output power above 15 mw at room temperature," Electron. Lett., 50, 1378 (2014).

 • L. Shterengas, R. Liang, G. Kipshidze, T. Hosoda, G. Belenky, S. S. Bowman, R. L. Tober, "Cascade type-I quantum well diode lasers emitting 960 mW near 3 μm," Appl. Phys. Lett., 105, 161112 (2014).

 • R. Liang, L. Shterengas, G. Kipshidze, T. Hosoda, S. Suchalkin, G. Belenky, "Novel Cascade Diode Lasers Based on Type-I Quantum Wells," Int. J. High Speed Electron. Syst., 23, 1450022 (2014).

 • R. Liang, L. Shterengas, T. Hosoda, A. Stein, M. Lu, G. Kipshidze, G. Belenky, "Diffraction limited 3.15 μm cascade diode lasers," Semicond. Sci. Technol., 29, 115016 (2014).

 • R. L. Tober, J. D. Bruno, S. Suchalkin, G. Belenky, "Zigzag modes in quantum cascade laser emission spectra," J. Opt. Soc. Am. B., 31, 2399 (2014).

 • M. Ya. Vinnichenko, L. E. Vorobjev, D. A. Firsov, M. O. Mashko, R. M. Balagula, G. Belenky, L. Shterengas, G. Kipshidze, "Dependence of the carrier concentration on the current in mid-infrared injection lasers with quantum wells," Semicond. 47, 1513 (2013).

 • M. Ya. Vinnichenko, L. E. Vorobjev, D. A. Firsov, M. O. Mashko, A. N. Sofronov, L. Shterengas, G. Belenky, "Dynamics of charge carrier recombination and capture in laser nanostructures with InGaAsSb/AlGaAsSb quantum wells," AIP Conference Proceedings 1566, 480 (2013).

 • D. Wang, Y. Lin, D. Donetsky, G. Kipshidze, L. Shterengas, G. Belenky, S. P. Svensson, W. L. Sarney, H. Hier, "Infrared emitters and photodetectors with InAsSb bulk active region," Proc. SPIE, 8704, 870410-1, (2013).

 • M. Ya. Vinnichenko, D. A. Firsov, L. E. Vorobjev, M. O. Mashko, L. Shterengas, G. Belenky, "Photoluminescence dynamics in InGaAsSb/AlGaAsSb quantum well nanostructures," Semicond., 47, 146 (2013).

 • T. Hosoda, R. Liang, G. Kipshidze, L. Shterengas, G. Belenky, "Room temperature operated diffraction limited λ≈ 3 μm diode lasers with 37 mW of continuous-wave output power," Electron. Lett., 49, 667 (2013).

 • Y. Lin, D. Wang, D. Donetsky, L. Shterengas, G. Kipshidze, G. Belenky, S. P. Svensson, W. L. Sarney, H. S. Hier, "Conduction-and Valence-Band Energies in Bulk InAs1−xSbx and Type II InAs1−xSbx/InAs Strained-Layer Superlattices," J. Electron. Mater., 42, 918 (2013).

 • D. Wang, D. Donetsky, G. Kipshidze, Y. Lin, L. Shterengas, G. Belenky, W. Sarney, S. P. Svensson, "Metamorphic InAsSb-based barrier photodetectors for the long wave infrared region," Appl. Phys. Lett., 103, 051120 (2013).

 • L. Shterengas, R. Liang, G. Kipshidze, T. Hosoda, S. Suchalkin, G. Belenky, "Type-I quantum well cascade diode lasers emitting near 3 μm," Appl. Phys. Lett., 103, 121108 (2013).

 • M. Jang, M. A. Belkin, S. Suchalkin, "Mid-Infrared Quantum Cascade Laser with Electrical Control of the Emission Frequency," IEEE J. Quantum. Electron., 49, 60 (2013).

 • S. Suchalkin, S. Jung, R. L. Tober, M. A. Belkin,Gregory Belenky, "Optically tunable long wavelength infrared quantum cascade laser operated at room temperature," Appl. Phys. Lett., 102, 011125 (2013).

 • S. Suchalkin, G. Belenky, T. Hosoda, S. Jung, M. A. Belkin, "Distributed Feedback Quantum Cascade Laser with optically tunable emission frequency," Appl. Phys. Lett., 103, 041120 (2013).

 • R. Liang, T. Hosoda, G. Kipshidze, L. Shterengas, G. Belenky, "GaSb-Based Diode Lasers With Asymmetric Separate Confinement Heterostructure," IEEE Photon. Technol. Lett., 25, 925 (2013).

 • G. Belenky, D. Wang, Y. Lin, D. Donetsky, G. Kipshidze, L. Shterengas, D. Westerfeld, W. L. Sarney, S. P. Svensson, "Metamorphic InAsSb/AlInAsSb heterostructures for optoelectronic applications," Appl. Phys. Lett., 102, 111108 (2013).

 • D. Wang, D. Donetsky, Y. Lin, G. Kipshidze, L. Shterengas, G. Belenky, W. L. Sarney, S. P. Svensson, "InAs1-xSbx alloys with native lattice parameters grown on compositionally graded buffers: structural and optical properties," Int. J. High Speed Electron. Syst., 21, 1250013 (2012).

 • D. Wang, D. Donetsky, S. Jung, G. Belenky, "Carrier lifetime measurements in long-wave infrared InAs/GaSb superlattices under low excitation conditions," J. Electron. Mater., 41, 3027 (2012).

 • S. P. Svensson, W. L. Sarny, H. Hier, Y. Lin, D. Wang, D. Donetsky, L. Shterengas, G. Kipshidze, G. Belenky, "Band gap of InAs1-xSbx with native lattice constant," Phys. Rev. B, 86, 245205 (2012)

 • S. Jung, R. Liang, G. Kipshidze, S. Suchalkin, L. Shterengas, and G. Belenky, "Single spatial mode 2 - 2.2 μm diode lasers fabricated by selective wet etching," Semicond. Sci. Technol., 27, 085004 (2012).

 • S. Jung, G. Kipshidze, R. Liang, S. Suchalkin, L. Shterengas, and G. Belenky, "GaSb based mid infrared single lateral mode lasers fabricated by selective wet etching technique with an etch stop layer," J. Electron. Mater., 41, 899 (2012).

 • W. L. Sarney, S. P. Svensson, H. Hier, G. Kipshidze, D. Donetsky, D. Wang, L. Shterengas, G. Belenky, "Structural and luminescent properties of bulk InAsSb," J. Vac. Sci. Technol. B, 30, 02B105 (2012).

 • S. P. Svensson, H. Hier, W. L. Sarney, D. Donetsky, D. Wang, G. Belenky, "Molecular beam epitaxy control and photoluminescence properties of InAsBi," J. Vac. Sci. Technol. B, 30, 02B109 (2012).

 • T. Hosoda, D. Wang, G. Kipshidze, W. L. Sarney, L. Shterengas, G. Belenky, "3 μm diode lasers grown on (Al) GaInSb compositionally graded metamorphic buffer layers," Semicond. Sci. Technol., vol. 27, p. 055011 (2012).

 • R. P. Leavitt, J. D. Bruno, J. L. Bradshaw, K. M. Lascola, J. T. Pham, F. J. Towner, S. Suchalkin, G. Belenky, I. Vurgaftman, C. L. Canedy, W. W. Bewley, C. S. Kim, M. Kim, C. D. Merritt, J. R. Meyer, "High performance interband cascade lasers at 3.8 microns," Proceedings SPIE Novel In-Plane Semiconductor Lasers XI, vol. 8277, p. 82771E, February (2012).

 • T. Hosoda, G. Kipshidze, L. Shterengas, G. Belenky, "Single spatial mode 3 μm diode lasers with continuous wave output power of 15 mW at room temperature," Electron. Lett., vol. 47, no. 24, pp. 1341-1343 (2011).

 • S. P. Svensson, D. Donetsky, D. Wang, H. Hier, F. J. Crowne, G. Belenky, "Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization," J. of Crystal Growth, 334, 103-107 (2011).

 • S. Suchalkin, G. Belenky, S. P. Svensson1, B. Laikhtman, D. Smirnov, L. C. Tung, and S. Bandara, "In-plane and growth direction electron cyclotron effective mass in short period InAs/GaSb semiconductor superlattices," J. Appl. Phys., 110, 043720 (2011).

 • G. Belenky, D. Donetsky, G. Kipshidze, D. Wang, L. Shterengas, W. L. Sarney, S.P. Svensson, "Properties of unstrained InAs1-XSbX alloys grown on compositionally graded buffers," Appl. Phys. Lett., 99, 141116 (2011).

 • W. L. Sarney, S. P. Svensson, H. Hier, D. Donetsky, D. Wang, L. Shterengas, S.Suchalkin, G. Belenky, "New Approaches to Direct Bandgap III-V Materials for LWIR Detector Applications," AIP Conf. Proc., 1416, 59-61 (2011).

 • G. Belenky, L. Shterengas, G. Kipshidze, T. Hosoda, "Type-I diode lasers for spectral region above 3 μm," accepted by IEEE J. Sel. Topics Quantum Electron. (2011).

 • R. Liang, J. Chen, G. Kipshidze, D. Westerfeld, L. Shterengas, G. Belenky, "High-Power 2.2-μm Diode Lasers With Heavily Strained Active Region," IEEE Photon. Technol. Lett., 23, 603 (2011).

 • S. Jung, S. Suchalkin, D. Westerfeld, G. Kipshidze, E. Golden, D. Snyder, G. Belenky, "High dimensional addressable LED arrays based on type I GaInAsSb quantum wells with quinternary AlGaInAsSb barriers," Semicond. Sci. Technol., 26, 085022 (2011).

 • G. Belenky, G. Kipshidze, D. Donetsky, S. P. Svensson, W. L. Sarney, H. Hier, L. Shterengas, D. Wang, Y. Lin, "Effects of carrier concentration and phonon energy on carrier lifetime in type-2 SLS and properties of InAs1-xSbx alloys," Proc. SPIE, 8012, 80120W (2011).

 • T. Hosoda, J. Chen, G. Tsvid, D. Westerfeld, R. Liang, G. Kipshidze, L. Shterengas and G. Belenky, "Progress in development of room temperature CW GaSb based diode lasers for 2-3.5 μm spectral region," Int. J. High Speed Electron. Syst., 20, 43 (2011).

 • G. Kipshidze, T. Hosoda, W. L. Sarney, L. Shterengas, G. Belenky, "High-power 2.2-μm diode lasers with metamorphic arsenic-free heterostructures," IEEE Photon. Technol. Lett., 23, 317 (2011).

 • T. Hosoda, G. Kipshidze, L. Shterengas, G. Belenky, "Diodes lasers emitting near 3.44 μm in continuous wave regime at 300 K," Electron. Lett., 46, 1455 (2010).

 • T. Hosoda, G. Kipshidze, G. Tsvid, L. Shterengas, G. Belenky, Type-I GaSb-based laser diodes operating in 3.1-3.3 μm wavelength range, IEEE Photon. Technol. Lett., 22, 718 (2010).

 • D. Wang, S.P. Svensson, L. Shterengas, G. Belenky, Near band edge optical absorption and photoluminescence dynamics in bulk InAsN dilute-nitride materials, J. Cryst. Growth, 312, 2705 (2010).

 • S.P. Svensson, D. Donetsky, D. Wang, P. Maloney, G. Belenky, Carrier lifetime measurements in InAs/GaSb strained layer superlattice structures, Proc. SPIE, 7660, 76601V (2010).

 • L. E. Vorobjev, V. L. Zerova, D. A. Firsov, G. Belenky, L. Shterengas, G. Kipshidze T. Hosoda, S. Suchalkin, M. Kisin, Charge Carrier Recombination Mechanisms in Sb_Containing Quantum Well Laser Structures, Bulletin of the Russian Academy of Sciences: Physics, 74, 69 (2010).

 • S. Jung, S. Suchalkin, G. Kipshidze, D. Westerfeld, E. Golden, D. Snyder, G. Belenky, Dual wavelength GaSb based type I quantum well mid-infrared light emitting diodes, Appl. Phys. Lett 96, 191102 (2010).

 • J. Chen, T. Hosoda, G. Kipshidze, L. Shterengas, G. Belenky, A. Soibel, C. Frez, S. Forouhar, Single Spatial Mode Room Temperature Operated 3.15 μm Diode Lasers, Electron. Lett., 46, 367 (2010).

 • J. Chen, T. Hosoda, G. Tsvid, R. Liang. D. Westerfeld, G. Kipshidze, L. Shterengas, G. Belenky, Type-I GaSb based diode lasers operating at room temperature in 2 to 3.5 μm spectral region, Proc. SPIE, 7686, 76860S (2010).

 • A.V. Okishev, D. Wang, D. Westerfeld, L. Shterengas, G. Belenky, Characterization of highly stable Mid-IR, GaSb-based laser diodes, LACSEA, 2010 paper: LMA5

 • D.A. Firsov, L.Shterengas, G. Kipshidze, V.L. Zerova, T. Hosoda, P. Thumrongsilapa, L.E. Vorobjev, G. Belenky, Dynamics of photoluminescence and recombination processes in Sb-containing laser nanostructures, Semicond., 44, 50 (2010).

 • G. Belenky, L. Shterengas, D. Wang, G. Kipshidze, L. Vorobjev, Continuous wave operated 3.2 um type-I quantum-well diode lasers with the quinary waveguide layer, Semicond. Sci. Technol., 24, 115013 (2009).

 • L. Shterengas, G. Kipshidze, T. Hosoda, J. Chen, G. Belenky, Diode lasers emitting at 3 um with 300 mW of continuous-wave output power, Electron, Lett., 45, 942 (2009).

 • D. Donetsky, S. P. Svensson, L. E. Vorobjev, G. Belenky, Carrier lifetime measurements in short-period InAs/GaSb Strained Layer Superlattice Structures Appl. Phys. Lett. 95, 212104 (2009).

 • S. Jung, S. Suchalkin, G. Kipshidze, D.Westerfeld, D. Snyder, M.Johnson, G. Belenky, GaSb-Based Type I Quantum Well Light Emitting Diode Addressable Array Operated at Wavelengths up to 3.66 μm IEEE Photonics Technol. Lett. 21, 1087 (2009).

 • A.V. Okishev, D. Westerfeld, L. Shterengas, G. Belenky, A stable mid-IR, GaSb-based diode laser source for the cryogenic target layering at the Omega Laser Facility Optics Express. 17, 15760 (2009).

 • T. Hosoda, G. Kipshidze, L. Shterengas, G. Belenky, 00mW type-I GaSb-based laser diodes operating at 3μm. Role of waveguide width Appl. Phys. Lett. 94, 261104 (2009).

 • J. Chen, G. Kipshidze, L. Shterengas, T. Hosoda, Y. Wang, D. Donetsky, G. Belenky .7μm GaSb based diode lasers with quinary waveguide IEEE Photon. Technol. Lett. 21, 1112 (2009).

 • D. Wang, S.P. Svensson, L. Shterengas, G. Belenky, C.S. Kim, I. Vurgaftman, J.R. Meyer, Band edge optical transitions in dilute-nitride GaNSb J. Appl. Phys. 105, 014904 (2009).

 • L.E. Vorobjev, V.L. Zerova, D.A. Firsov, V.A. Shalygin, M.Ya.Vinnichenko, V.Yu. Panevin, P. Thumrongsilapa, K.S. Borshchev, A.E.Zhukov, Z.N. Sokolova, I.S. Tarasov, G. Belenky, S. Hanna, and A.Seilmeier, Hot charge-carrier electroluminescence from laser nanostructures in the spontaneous and stimulated emission modes and absorption of IR radiation by hot electrons in quantum wells Bulletin of the Russian Academy of Sciences: Physics, vol. 73, No. 1, pp.73-76 (2009).

 • J.Bradshaw, J. D. Bruno, F. Towner, C. Shiner, J. Pham, S. Suchalkin, G. Belenky Development of a mid-infrared interband cascade LED array Proc. SPIE, 6942, 69420G (2008).

 • J.Y.T. Huang, L.J. Mawst, S. Jha, T.F. Kuech, D. Wang, L. Shterengas, G. Belenky, J.R. Meyer, I. Vurgaftman, MOVPE growth of Ga(As)SbN on GaSb substrates J. Crystal Growth. 310, 4839 (2008).

 • J. Chen, D. Donetsky, L. Shterengas, M. Kisin, G. Kipshidze, G. Belenky, Effect of quantum well compressive strain above 1% on differential gain and threshold current in type-I GaSb-based diode lasers IEEE J. Quantum. Electron. 44, 1204 (2008).

 • L. Shterengas, G. Belenky, T. Hosoda, G. Kipshidze, S. Suchalkin, Continuous wave operation of diode lasers at 3.36μm at 12 degrees C Appl. Phys. Lett. 93, 011103 (2008).

 • S. Suchalkin, S. Jung, G. Kipshidze, L. Shterengas, T. Hosoda, D. Westerfeld, D. Snyder, G. Belenky, GaSb based light emitting diodes with strained InGaAsSb type I quantum well active regions Appl. Phys. Lett. 93, 081107 (2008).

 • G. Belenky, L. Shterengas, D. Donetsky, M. Kisin, G. Kipshidze, Advances in Type-I GaSb Based Lasers Japan. J. Appl. Phys. 47, 8236 (2008).

 • L.E. Vorobyev, V.L. Zerova, K.S. Borshchev, Z.N. Sokolova, I.S. Tarasov, G. Belenky, Charge-Carrier Concentration and Temperature in Quantum Wells of Laser Heterostructures Under Spontaneous and Stimulated-Emission Conditions Semiconductors 42, 737 (2008).

 • G. Belenky , D. Donetsky , L. Shterengas , T. Hosoda , J. Chen , G. Kipshidze , M. Kisin, D. Westerfeld , Interband GaSb-based laser diodes for spectral regions of 2.3-2.4 μm and 3-3.1 μm with improved room-temperature performance Proceedings SPIE 6900, 690004 (2008).

 • L. Shterengas, G. Belenky, G. Kipshidze, T. Hosoda, Room Temperature Operated 3.1μm Type-I GaSb-based Diode Lasers with 80mW Continuous Wave Output Power Appl. Phys. Lett. 92, 171111 (2008).

 • S. Suchalkin, D. Westerfeld, G. Belenky, J.D. Bruno, J. Pham, F. Towner, R.L. Tober, Measurement of Semiconductor Laser Gain by the Segmented Contact Method Under Strong Current Spreading Conditions IEEE J. Quantum Electron. 44, 561 (2008).

 • T. Hosoda, G. Belenky, L. Shterengas, G. Kipshidze, M. Kisin, "Continuous-wave room temperature operated 3.0μm Type I GaSb-based lasers with quinternary AlInGaAsSb barriers", Appl. Phys. Lett. 92, 091106 (2008).

 • D. Donetsky, J. Chen, L. Shterengas, G. Kipshidze and D. Westerfeld, .3-micron high-power Type-I quantum-well GaInAsSb/AlGaAsSb/GaSb laser diode arrays with an increased fill-factor J. of Electron. Mater. 37, 1770, (2008).

 • D. Donetsky, G. Kipshidze, L. Shterengas, T. Hosoda, and G. Belenky, .3 μm type-I quantum well GaInAsSb/AlGaAsSb/GaSb laser diodes with quasi-CW output power of 1.4 W Electron. Lett., 43 (15) 810-812 (2007).

 • S. Suchalkin, M.V. Kisin, S. Luryi, G. Belenky, F.J. Towner, J.D. Bruno, and R.L. Tober, "High -speed wavelength tuning of MidIR cascade lasers", IEEE Photon.Technol. Lett., 19, 360 (2007).

 • L. Shterengas, G.L. Belenky, D.Donetsky and M. Kisin, High power 2.4 μm heavily strained Type-I quantum well GaSb-based diode lasers with more than 1W of continuous wave output power and a maximum power conversion efficiency of 17.5 % Appl. Phys. Lett., 90, 011119 (2007).

 • M. V. Kisin, S. Suchalkin, and G. Belenky, "Proposal for electrically tunable quantum-cascade laser", IEEE Photon.Technol. Lett. 19, 360 (2007).

 • M.W. Dashiell, J.F. Beausang, H. Ehsani, G.J. Nichols, D.M. Depoy, L.R. Danielson, P. Talamo, K.D. Rahner, E.J. Brown, S.R. Burger, P.M. Fourspring, W.F. Topper, P.F. Baldasaro, C.A. Wang, R. Huang, M. Connors, G. Turner, Z. Shellenbarger, G. Taylor, Jizhong Li, R. Martinelli, D. Donetsky, S. Anikeev, G. Belenky and S. Luryi, "Quaternary InGaAsSb Thermophotovoltaic Diodes IEEE Transactions on Electron Devices, 53 (12), pp. 2879-2887, (2006).

 • S. Suchalkin, M.V. Kisin, S. Luryi, G. Belenky, F.J. Towner, J.D. Bruno, C. Monroy, and R.L. Tober , "Widely tunable type-II interband cascade laser", Appl. Phys. Lett. 88, No 3, 031103 (2006).

 • Conference Presentations (selected)

 • L. Shterengas, R. Liang, T. Hosoda, G. Kipshidze, G. Belenky, S. S Bowman, R. L Tober, "Type-I QW cascade diode lasers with 830 mW of CW power at 3 μm," talk on SPIE Photonics West 2015, San Francisco, CA.

 • D. Donetsky, S. Svensson, W. Sarney, H. Hier, Y. Lin, D. Wang, G. Kipshidze, L. Shterengas, G. Belenky, "Progress in development of LWIR detectors with bulk InAsSb absorbers," talk on SPIE Photonics West 2015, San Francisco, CA.

 • D. Donetsky, S. P. Svensson, W. L. Sarney, H. S. Hier, D. Wang, G. Kipshidze, L. Shterengas, Y. Lin, G. Belenky, "Development of bulk (Al)InAsSb alloys and InAsSb/AlInAsSb heterostructures for L/MWIR applications," talk on SPIE Photonics West 2014, San Francisco, CA.

 • L. Shterengas, R. Liang, G. Kipshidze, T. Hosoda, S. Suchalkin, G. Belenky, "Cascade pumping of GaSb-based type-I quantum well diode lasers" talk on SPIE Photonics West 2014, San Francisco, CA.

 • R. Liang, L. Shterengas, T. Hosoda, A. Stein, M. Lu, G. Kipshidze, G. Belenky, "Diffraction limited 3.15 μm cascade diode lasers," talk on Device Research Conference (DRC) 2014, Santa Barbara, CA.

 • R. Liang, T. Hosoda, G. Kipshidze, L. Shterengas, G. Belenky "3 μm GaSb-based Type-I Quantum-well Diode Lasers with Cascade Pumping Scheme" talk on CLEO: Science and Innovations 2013, San Jose, CA.

 • S. Suchalkin, S. Jung, M. Jang, T. Hosoda, R. L. Tober, M. A. Belkin, G. Belenky,"Frequency-modulated Quantum Cascade Laser For Free Space Data Links", invited talk on Photonics West 2013, San-Francisco, CA.

 • D. Wang, Y. Lin, D. Donetsky, G. Kipshidze, L. Shterengas, G. Belenky, S. P Svensson, W. L Sarney, H. Hier "Infrared emitters and photodetectors with InAsSb bulk active region" SPIE Conf. Defense Security and Sensing, April 29-May 3 (2013) Baltimore, MD.

 • L. Sheterengas, G. Kipshidze, T. Hosoda, R. Liang, S. Jung, D. Westerfield, G. Belenky, "Diode Lasers operating in spectral range from 1.9 to 3.5 μm", 23rd IEEE International Semiconductor Laser Conference 2012, San Diego, CA.

 • G. Belenky, L. Shterengas, G. Kipshidze, D. Donetsky, D. Wang, T. Hosoda, W. L. Sarney, S. P. Svensson, "Metamorphic antimonides for infrared photonics" (Invited), MIOMD-XI, Sept 4-8, (2012), Chicago, IL.

 • Y. Lin, D. Wang, D. Donetsky, L. Shterengas, G. Kipshidze, G. Belenky, W. L.Sarney, H. Hier, S. P. Svensson "Properties of epitaxial InAsSb layer on compositionally-graded metamorphic buffers" 54th Electronic Materials Conference (EMC), June 20-22 (2012), State College, PA

 • D. Wang, D. Donetsky, Y. Lin, G. Kipshidze, L. Shterengas, G. Belenky, W. L. Sarny and S. P. Svensson, "InAs1-XSbX alloys grown on compositionally graded buffers", CoS3 Spring Workshop, April 13 (2012), Princeton, NJ.

 • D. Donetsky, G. Belenky, D. Wang, Y. Lin, L. Shterengas, G. Kipshidze, W. L. Sarney, H. Hier, S. P. Svensson, "Unrelaxed bulk InAsSb with novel absorption, carrier transport and recombination properties for MWIR and LWIR photodetectors", SPIE Conf. Defense Security and Sensing, April 23-27 (2012) Baltimore, MD.

 • G. Belenky, D. Wang, D. Donetsky, G. Kipshidze, L. Shterengas, W.L. Sarney, S. P. Svensson, "Properties of unrelaxed InAs1-XSbX alloys grown on compositionally graded buffers", Workshop on Frontier Elec. (WOFE), December 18-21 (2011), San Juan, Puerto Rico.

 • W. L. Sarney, G. Kipshidze, H. Hier, D. Donetsky, D. Wang, L. Shterengas, S. P. Svensson, and G. Belenky, "Structural and Luminescent Properties of Bulk InAs(X) Sb(1-X)", 28th North American MBE Conference, August 14-17 (2011), San Diego, CA.

 • S. P. Svensson, H. Hier, W.L. Sarney, D. Donetsky, D. Wang, and G. Belenky, "Dilute N and Bi III-V Alloys for Long Wavelength Infrared Detector Applications", 28th North American MBE Conference, August 14-17 (2011), San Diego, CA.

 • D. Donetsky, L. Shterengas, G. Kipshidze, D. Wang, G. Belenky, W. Sarney1, H. Hier1, S. P. Svensson, "Recombination and optical properties of unrelaxed InAsSb grown by MBE on GaSb and InSb substrates", 15th Int. Conf. on Narrow Gap Systems, August 1-5 (2011), Blacksburg, VA.

 • W. L. Sarney, S. P. Svensson, H. Hier, G. Belenky, "New Approaches to Bulk, Direct Bandgap III-V Materials for Long-Wavelength Infrared (LWIR) Detector Applications", 15th Int. Conf. on Narrow Gap Systems, August 1-5 (2011), Blacksburg, VA.

 • S. P. Svensson, W. L. Sarney, H. Hier, and G. Belenky, "The Prospects for Use of Highly Mismatched Alloys in Long-Wavelength Infrared Detectors", 2nd Int. Workshop on Bismuth Containing Semiconductors (Invited), July 18-20 (2011), Univ. of Surrey, UK.

 • W. L. Sarney, S. P. Svensson, H. Hier, D. Wang, D. Donetsky, and G. Belenky, "The Effect of Bi on the Growth and Performance of Type II Strained Layer Superlattices for IR Photodetectors", 2nd Int. Workshop on Bismuth Containing Semiconductors, July 18-20 (2011), Univ. of Surrey, UK.

 • S. Jung, S. Suchalkin, G. Kipshidze, L. Shterengas, G. Belenky, Wet Etching Technique for Fabrication of GaSb Based Mid Infrared Single Lateral Mode Lasers, 53rd Electronic Materials Conference (EMC), June 22-24 (2011), Santa Barbara, CA.

 • D. Wang, D. Donetsky, S. Svensson, S. Suchalkin, G. Kipshidze, G. Belenky, A. Liu, J. Fastenau, D. Lubyshev, Study of Carrier Lifetime and Background Carrier Concentration in GaSb/InAs Strained-Layer Superlattices and Bulk Epitaxial Layers by Optical Modulation Response, 53rd Electronic Materials Conference (EMC), June 22-24 (2011), Santa Barbara, CA.

 • D. Wang, S. Svensson, L. Shterengas, G. Belenky, Band Edge Optical Transitions in Bulk GaSbN and InAsN Dilute-Nitride Materials, 53rd Electronic Materials Conference (EMC), June 22-24 (2011), Santa Barbara, CA.

 • G. Belenky, G. Kipshidze, S. Svensson, W. Sarney, H. Heir, L. Shterengas, D. Donetsky, D. Wang, Y. Lin, Carrier Recombination in GaSb/InAs SLS and InAsSb, SPIE Defense, Security and Sensing, April 25-29 (2011), Orlando, FL.

 • S. Forouhar, C. Frez, A. Ksendzov, Y. Qiu, K. J. Franz, A. Soibel, J. Chen, T. Hosoda, G. Kipshidze, L. Shterengas, G. Belenky, Low power consumption lasers for next generation miniature optical spectrometers for trace gas analysis," SPIE Photonics West, January 22-27 (2011), San Francisco, CA.

 • G. Belenky, L. Shterengas, G. Kipshidze, T. Hosoda, J. Chen, Advances in the development of type-I quantum well GaSb-based diode lasers," SPIE Photonics West, January 22-27 (2011), San Francisco, CA.

 • G. Tsvid, A. Soibel, T. Hosoda, J. Chen, G. Kipshidze, L. Shterengas, C. F. Frez, S. Forouhar, G. Belenky, Type-I GaSb based diode single lateral mode lasers operating at room temperature in 3.1-3.2 μm spectral region," SPIE Photonics West, January 22-27 (2011), San Francisco, CA.

 • S. Jung, S. Suchalkin, G. Kipshidze, G. Belenky, GaSb Based Mid-Infrared Type I Quantum Well Dual Wavelength LEDs and LED Arrays, MIRTHE-IROn-SensorCAT Virtual Conference, January 19-20 (2011).

 • L. Shterengas, G. Kipshidze, T. Hosoda, G. Tsvid, G. Belenky, Diode Lasers Emitting above 3 μm at Room Temperature with more than 100 mW of Continuous Wave Output Power, SPIE Photonics West, January 23-28 (2010), San Fransisco, CA.

 • S. Svensson, D. Donetsky, D. Wang, P. Maloney, G. Belenky, Carrier Lifetime Measurement in InAs/GaSb Strained Layer Superlattice Structures, SPIE Defense Security and Sensing, April 5-9 (2010), Orlando, FL.

 • T. Hosoda, J. Chen, G. Tsvid, G. Kipshidze, S. Suchalkin, L. Shterengas and G. Belenky, Diode Lasers Operating at Room Temperature in 2-3.5 μm Spectral Region SPIE Defense, Security and Sensing, April 5-9 (2010), Orlando, FL.

 • A. Soibel, C. Frez, A. Ksendzov, Y. Qiu, S. Forouhar, J. Chen, T. Hosoda, G. Kipshidze, L. Shterengas, G. Tsvid, G. Belenky, .0-3.5μm single spatial mode diode lasers operating at room temperature, Conference on Lasers and Electro Optics, 2010 (CLEO 2010), May 16-21 (2010), San Jose, CA.

 • G. Belenky, G. Kipshidze, T. Hosoda, J. Chen, D. Wang, L. Shterengas, GaSb-based laser operating within the spectra range of 2-3 μm, Advanced Workshop on Frontiers in Electronics (WOFE 09), December 13-16 (2009), Rincon, Puerto Rico.

 • T. Hosoda, G. Kipshidze, L. Shterengas, D. Westerfeld, S. Suchalkin, G. Belenky, μm Type-I GaSb-based diode lasers operating at room temperature in CW mode, 26th North American Molecular Beam Epitaxy Conference (NAMBE), August 9-12 (2009), Princeton, NJ.

 • J. Chen, G. Kipshidze, L. Shterengas, T. Hosoda, Y. Wang, D. Donetsky, G. Belenky, .7 μm GaSb Based Diode Lasers With Quinary Waveguide, 51st Electronic Materials Conference (EMC), June 24-26 (2009), University Park, PA

 • G. Belenky, L. Shterengas, G. Kipshidze, T. Hosoda, J. Chen, S. Suchalkin, GaSb-based Laser diodes operating within spectral range of 2-3.5 μm, Conference on Lasers and Electro-Optics, 2009 (CLEO 9), May 31-June 5 (2009), Baltimore, MD.

 • G. Belenky, G. Kipshidze, L. Shterengas, D. Donetsky, T. Hosoda, J. Chen, S. Suchalkin, GaSb based lasers operating within spectral range above 2 μm, SPIE Photonics West, January 24-29 (2009), San Jose, CA.

 • L.Shterengas, G. Kipshidze, T. Hosoda, D. Donetsky, G. Belenky, Room Temperature Operated 3.1-μm type-I GaSb-based diode lasers with 80 mW continuous wave output power, Conference on Lasers and Electro-Optics, 2008 (CLEO 8), May 4-9 (2008) San Jose, CA.

 • S. Suchalkin, D. Westerfeld, S. Jung, G. Kipshidze, L. Shterengas, T. Hosoda, G. Belenky, Room temperature operated GaSb-based type I light-emitting diodes, SPIE Defence and Security, March 17-18 (2008), Orlando, FL.

 • L.E. Vorobjev, V.L. Zerova, D.A. Firsov, V.A. Shalygin, M.Ya. Vinnichenko, V.Yu. Panevin, T. Paphavy, K.S. Borchev, A.E. Zhukov, Z.N. Sokolova, I.S. Tarasov, G. Belenky, Electroluminescence of hot carriers in laser nanostructures under spontaneous - and stimulated - emission conditions and absorption of IR-radiation by hot electrons in quantum wells, XII International Symposium on Nanophotonics and Nanoelectronics, pp. 173 (in Russian) March 10-14 (2008), Nizny Novgorod, Russia.

 • G. Belenky, L. Shterengas, D. Donetsky, M.V. Kisin, Advances in Mid-Infrared GaSb-based Lasers, 1st International Conference on Materials and Information Sciences in High Technologies (MISHE 7), September. 26-29 (2007), Baku, Azerbaijan.

 • L. Shterengas, G. Belenky, M. Kisin, D. Donetsky, D. Westerfeld, Recent developments in high power 2.3-2.4 μm diode lasers SPIE Defense and Security Symposium, April (2007), Orlando, FL.

 • L. Shterengas, G. Belenky, M.V. Kisin, D. Donetsky, D. Westerfeld, High power 2.4 μm Type-I QW GaSb-based diode lasers with enhanced differential gain, 7th International Conference on Mid-Infrared Optoelectronics Materials and Devices (MIOMD), May (2007), Bad Ischl, Austria.

 • M.V. Kisin, S.D. Suchalkin, S. Luryi, G. Belenky, J. Bruno, F.J. Towner, R. Tober, Electrically Tunable Cascade Laser, 2nd International Workshop on Quantum Cascade Lasers (QCL), September 6-9 (2006), Brindizi, Italy.

 • S.D. Suchalkin, M.V. Kisin, S. Luryi, G. Belenky, J. Bruno, F.J. Towner, , R. Tober, Widely tunable type II interband cascade laser," Advanced Research Workshop Future Trends in Microelectronics: Up the Nano Creek, June 26-30 (2006), Crete, Greece.

 • S.D. Suchalkin, M.V. Kisin, S. Luryi, G. Belenky, J. Bruno, F.J. Towner, C. Monroy, R. Tober, Electrically Tunable Interband Cascade Laser (invited paper), SPIE Optics East, October 1-4 (2006), Boston, MA.

 • J. G. Kim, H. An, L. Shterengas, R.U. Martinelli, G.L. Belenky, Development of high-power room-temperature continuous wave operation of 2.0-2.8um type-I In(Al)GaAsSb/GaSb diode lasers, 2nd Symposium on Infrared Materials and Technologies, November 21-22 (2005), The Penn State Conference Center Hotel, State College, PA.

 • M. V. Kisin, L. Shterengas, J.G. Kim, G. Belenky, Enhancement of Optical Gain in Sb-based MIR Diode Lasers IEEE 21st Int. Semiconductor Laser Conference (ISLC), September 18-21 (2006), Kohala Coast, HI.

 • L. Shterengas, A. Ongstad, R. Kaspi, S. Suchalkin, G. Belenky, M. Kisin, D. Donetsky, Electron and Hole Energy Relaxation in InGaAsSb/InAs/InGaSb Type-II QW Laser Heterostructures 48th Electronic Materials Conference (EMC), June 28-30 (2006) Pennsylvania State University, State College, PA.

 • D. Donetsky, L. Shterengas, G. Kim, G. Belenky, A. Gourevitch, D. Westerfeld, R. Martinelli, Carrier Recombination Kinetics in 2.3-2.4 μm InGaAsSb/AlGaAsSb QW Laser Heterostructures, 48th Electronic Materials Conference (EMC), June 28-30 (2006) Pennsylvania State University, State College, PA.

 • L. Shterengas, A. Ongstad, R. Kaspi, S. Suchalkin, G. Belenky, M. Kisin, D. Donetsky, Carrier Capture in InGaAsSb/InAs/InGaSb Type-II QW Laser Heterostructures, Conference on Lasers and Electro-Optics, 2006 (CLEO 6), May 21-26 (2006), Long Beach, CA.

 • J.G. Kim, H. An, L. Shterengas, R.U. Martinelli, G.L. Belenky, Development of high-power room-temperature continuous wave operation of 2.0-2.8 μm type-I In(Al)GaAsSb/GaSb diode lasers, 2nd Symposium on Infrared Materials and Technologies, November 21-22 (2005), The Penn State Conference Center Hotel, State College, PA.

 • L. Shterengas, A. Ongstad, R. Kaspi, S. Suchalkin, G. Belenky, M. Kisin, D. Donetsky, Carrier Capture in InGaAsSb/InAs/InGaSb Type-II QW Laser Heterostructures, Conference on Lasers and Electro-Optics, 2006 (CLEO 6), May 21-26 (2006) Long Beach, CA.

 • L. Shterengas, G. Belenky, J.G. Kim, A. Gourevitch, D. Donetsky, D. Westerfeld, R. Martinelli, Effect of compressive strain on differential gain of GaSb-based type-I QW lasers, Conference on Lasers and Electro-Optics, 2006 (CLEO 6), May 21-26 (2006) Long Beach, CA.

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